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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6622TR1PBF

Name: IRF6622TR1PBF
Brand: Infineon Technologies
SKU: IRF6622TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6622TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric SQ

Datasheet:: IRF6622TR1PBF.pdf

Description:: MOSFET N-CH 25V 15A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6622TR1PBF from Infineon Technologies is a 25 V, 12 A N-channel enhancement-mode Power MOSFET in DirectFET® SQ package, featuring 4.9 mΩ R_DS(on) @ 10 V and 6.8 mΩ @ 4.5 V, ultra-low 11 nC total gate charge, and dual-sided cooling capability. It is optimized for synchronous buck converter control FETs in CPU core DC-DC converters requiring high-frequency switching and low conduction loss.

For engineers reviewing the IRF6622TR1PBF datasheet, IRF6622TR1PBF pinout, IRF6622TR1PBF application, or IRF6622TR1PBF equivalent, key selection criteria include R_DS(on) at 4.5 V, Q_g/Q_gd ratio for fast switching, thermal resistance with double-sided cooling, and avalanche energy rating (E_AS = 120 mJ) under clamped inductive load conditions.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET® SQ packaging-metal-can, top-side drain, bottom-side source/gate terminals-to achieve sub-0.7 mm profile and <3.7 °C/W R_θJC. Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) enables robust 4.5 V logic-level drive compatibility in high-density power stages.

The device exhibits low Crss (210 pF) and high Ciss/Coss ratio, supporting fast dv/dt immunity and reduced Miller-induced turn-on risk. Its body diode shows t_rr = 10–15 ns and Q_rr = 7.1–11 nC at di/dt = 500 A/µs, critical for synchronous rectification efficiency in multiphase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage for 12 V input bus applications with margin
R_DS(on) @ 10 V	4.9 mΩ - Enables ≤1.5 W conduction loss at 12 A continuous current
R_DS(on) @ 4.5 V	6.8 mΩ - Supports direct drive from 5 V or 4.5 V PWM controllers without level shift
Q_g total	11 nC - Reduces gate drive power and enables >1 MHz switching with low driver loss
E_AS	120 mJ - Withstands unclamped inductive energy during fault transients in VRM designs
R_θJC	3.7 °C/W - Enables high-power density via dual-sided cooling with heatsink on top (drain)
t_r/t_f	16 ns / 4.6 ns - Fast edge rates minimize switching transition losses in hard-switched topologies

Pinout & Package

IRF6622TR1PBF uses the DirectFET® SQ (Small Size Can, Q-designation) package: metal-can outline with top-side drain (D), bottom-side source (S) and gate (G) terminals. Dimensions: 4.8 × 3.8 × 0.65 mm (L × W × H), footprint compatible with Micro-8 layouts but with superior thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-current path; serves as thermal interface for top-side heatsinking
Bottom Left Pad	Source (S)	Low-impedance return path; connects to PCB ground plane for minimal loop inductance
Bottom Right Pad	Gate (G)	Control terminal; isolated pad layout minimizes coupling to high-dv/dt drain node

Key Features

Feature	Design Value
DirectFET® SQ packaging	0.65 mm height enables ultra-thin VRM modules while enabling dual-sided thermal management
Low Q_gd/Q_g ratio	3.8 nC / 11 nC = 0.35 - Reduces Miller plateau duration and improves controllability during hard switching
High C_iss/C_oss ratio	1450 pF / 380 pF ≈ 3.8 - Enhances zero-voltage switching (ZVS) soft-start capability in resonant topologies
Body diode Q_rr	7.1 nC - Low reverse recovery charge reduces shoot-through risk and EMI in synchronous buck operation
RoHS-compliant lead-free	Qualified for 260 °C reflow - Compatible with standard SMT assembly processes without special handling

Applications

Server CPU Core VRM

Laptop Voltage Regulator Module

Use Scenario: Multiphase synchronous buck converter supplying 0.8–1.3 V @ up to 150 A to modern x86 processors.

IC Role / Device Role / Timing Role: Control FET switching at 300–1000 kHz with precise dead-time control to prevent shoot-through.

Use Value: 4.9 mΩ R_DS(on) and 11 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by ≥1.2% vs. legacy SO-8 MOSFETs.

Use Scenario: Compact single-phase or dual-phase VRM powering mobile CPUs in space-constrained ultrabooks.

IC Role / Device Role / Timing Role: High-side switch operating with 4.5 V gate drive from integrated PWM controller.

Use Value: 6.8 mΩ @ 4.5 V ensures stable regulation under dynamic load steps without gate boosting circuitry.

GPU Power Delivery

ASIC/FPGA Core Supply

Use Scenario: High-current, multi-rail power system for discrete graphics processing units with rapid load transients.

IC Role / Device Role / Timing Role: Primary switching element in high-frequency interleaved buck stages delivering 0.9–1.2 V @ >100 A.

Use Value: Dual-sided cooling and 3.7 °C/W R_θJC maintain junction temperature <105 °C under sustained 12 A load with passive heatsinking.

Use Scenario: Point-of-load regulator for high-performance AI accelerators requiring tight voltage tolerance and fast transient response.

IC Role / Device Role / Timing Role: Control FET in adaptive voltage positioning (AVP) topology with active droop compensation.

Use Value: Low Q_rr (7.1 nC) and fast t_rr (10 ns) minimize body diode conduction loss during light-load discontinuous conduction mode (DCM).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6614TR1PBF	Higher R_DS(on) (6.0 mΩ @ 10 V), same Q_g (11 nC), identical SQ package	Suitable where slightly higher conduction loss is acceptable for cost optimization	Select when thermal budget allows 0.5–1.0 °C higher T_J rise at 12 A DC
SiR626DP-T1-GE3	Lower R_DS(on) (4.0 mΩ @ 10 V), higher Q_g (15.5 nC), PowerPAK® 1212-8 package	Requires PCB redesign due to different footprint and thermal interface geometry	Choose only if board layout supports PowerPAK and switching frequency <500 kHz to manage increased gate drive loss

Compared with IRF6622TR1PBF, IRF6614TR1PBF trades 22% higher R_DS(on) for identical gate drive and thermal mounting, while SiR626DP-T1-GE3 delivers lower conduction loss but demands higher gate drive power and incompatible mechanical integration-making IRF6622TR1PBF optimal for drop-in upgrades in existing DirectFET-based VRMs.

Availability

IRF6622TR1PBF is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop voltage regulator modules, and GPU power delivery systems requiring stable component supply, high-reliability qualification, and long-term production continuity.

Supply support for IRF6622TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The DirectFET® product line was engineered specifically for high-frequency, high-current DC-DC conversion in computing and communications infrastructure-prioritizing low-profile packaging, dual-sided thermal extraction, and gate charge optimization over legacy through-hole or SO-8 constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6622TR1PBF supports 12 A continuous drain current at T_A = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes surface mounting on a 1-inch square copper board in still air and accounts for thermal derating beyond 25°C ambient.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes-a gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's low gate resistance (1.8–3.1 Ω) and fast switching edges (t_r = 16 ns) make external series resistance essential to prevent oscillation and ensure reliable turn-on/turn-off timing in VRM applications.

Can the IRF6622TR1PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature) enables inherent current sharing when paralleled. However, matched layout symmetry, identical gate drive paths, and thermal coupling between devices are required to ensure balanced dynamic current distribution across phases.

Is the body diode suitable for synchronous rectification in buck converters?

The body diode has t_rr = 10–15 ns and Q_rr = 7.1–11 nC at di/dt = 500 A/µs, making it viable for synchronous rectification at frequencies up to 1 MHz-but only when the external gate driver actively commutates the channel before reverse recovery begins. It is not intended for freewheeling-only operation without channel control.

IRF6622TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric SQ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1450 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 34W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ SQ

IRF6622TR1PBF FAQ

1.How can I place an order for IRF6622TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6622TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6622TR1PBF reliable?

The price and inventory of IRF6622TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6622TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6622TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6622TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6622TR1PBF?

IRF6622TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6622TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6622TR1PBF?

For technical support, including IRF6622TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6622TR1PBF requirements.

6.How does Aetrix verify that IRF6622TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6622TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6622TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6622TR1PBF?

All IRF6622TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6622TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6622TR1PBF part is unused and in its original packaging.

Return procedure for IRF6622TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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