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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6622TRPBF

Name: IRF6622TRPBF
Brand: Infineon Technologies
SKU: IRF6622TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6622TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric SQ

Datasheet:: IRF6622TRPBF.pdf

Description:: MOSFET N-CH 25V 15A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6622TRPBF from Infineon Technologies (formerly International Rectifier) is a 25 V, 12 A N-channel Power MOSFET in DirectFET® SQ package, optimized for synchronous buck converter control FETs in CPU core DC-DC applications. It delivers 4.9 mΩ R_DS(on) at V_GS = 10 V, 6.8 mΩ at 4.5 V, and ultra-low 11 nC total gate charge - enabling high-frequency, high-efficiency operation with dual-sided cooling capability.

For engineers reviewing the IRF6622TRPBF datasheet, IRF6622TRPBF pinout, IRF6622TRPBF application, or IRF6622TRPBF equivalent, key selection criteria include its low-profile (0.7 mm) DirectFET SQ footprint, 3.7 °C/W junction-to-case thermal resistance, and body diode recovery performance (t_rr = 10–15 ns, Q_rr = 7.1–11 nC) critical for hard-switched synchronous rectification.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-can DirectFET SQ package with top-side drain and bottom-side source/gate terminals - enabling dual-sided thermal management and sub-1 nH package inductance. Its gate threshold voltage (1.35–2.35 V) and negative temperature coefficient of V_GS(th) (−5.9 mV/°C) support stable parallel operation in multiphase VRMs.

The device is characterized for clamped inductive switching (E_AS = 59 mJ), avalanche-rated (I_AR = 12 A), and specified for repetitive pulsed operation up to 120 A peak drain current. Gate charge partitioning (Q_gs2 = 1.6 nC, Q_gd = 3.8 nC) enables precise timing control in high-dV/dt synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage compatible with 12 V input bus and 5 V logic-level gate drive in point-of-load converters.
R_DS(on) @ 10 V	4.9 mΩ - Enables <1 W conduction loss at 15 A DC, critical for >90% efficiency in CPU core rails.
R_DS(on) @ 4.5 V	6.8 mΩ - Supports direct drive from 5 V PWM controllers without level-shifting, reducing BOM count.
Q_g total	11 nC - Low gate charge minimizes driver power and propagation delay, supporting >1 MHz switching.
t_rr / Q_rr	10–15 ns / 7.1–11 nC - Fast, low-charge body diode reduces shoot-through risk and reverse recovery loss in synchronous rectification.
R_θJC	3.7 °C/W - Enables effective heat extraction via PCB copper and optional clip heatsink, essential for compact VRM layouts.
Package	DirectFET SQ - 0.7 mm profile, metal-can construction with top-drain/bottom-source-gate layout for dual-sided cooling.

Pinout & Package

IRF6622TRPBF uses the DirectFET® SQ (Small Size Can, Q-designation) package: a surface-mount copper can with exposed top-side drain and bottom-side source/gate terminals. Dimensions: 4.8 × 3.8 × 0.7 mm (L × W × H), RoHS-compliant lead-free finish (reflow qualified to 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-current path; thermally coupled to heatsink or PCB copper pour for dual-sided cooling.
Bottom Left Pad	Source (S)	Low-side return node; connects to ground plane and driver return, minimizing loop inductance.
Bottom Right Pad	Gate (G)	Control input; isolated pad geometry supports clean gate drive routing and EMI suppression.

Key Features

Feature	Design Value
Ultra-low Q_g/R_DS(on) ratio	11 nC / 4.9 mΩ = 2.25 nC·mΩ - balances switching and conduction losses for optimal figure-of-merit in 500 kHz–2 MHz VRMs.
DirectFET SQ thermal architecture	Junction-to-case R_θJC = 3.7 °C/W - improves thermal transfer by 80% vs. SO-8, enabling higher power density in thin-profile systems.
High C_dv/dt immunity	Specified for hard-switched operation with dV/dt > 50 V/ns - suppresses false turn-on in fast-rising synchronous buck nodes.
Optimized for ControlFET socket	Gate threshold (1.8 V typ.) and transconductance (55 S) tuned for stable gate drive in high-side position of synchronous buck converters.

Applications

Server CPU Core VRM

Laptop Voltage Regulator Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V @ up to 150 A to modern x86 processors under dynamic load.

IC Role / Device Role / Timing Role: Control FET (high-side switch) operating at 500 kHz–1.5 MHz with tight dead-time control.

Use Value: 4.9 mΩ R_DS(on) and 11 nC Q_g reduce both conduction loss and gate drive loss, directly improving full-load efficiency by ≥0.5% over legacy SO-8 MOSFETs.

Use Scenario: Compact, low-profile VRM on thin-and-light laptop motherboards where height clearance < 1 mm is mandatory.

IC Role / Device Role / Timing Role: High-side switching element in 2–3 phase buck topology with integrated controller and 5 V gate drive.

Use Value: 0.7 mm DirectFET SQ profile enables mechanical stacking with inductors and capacitors, eliminating height bottlenecks while maintaining 6.8 mΩ R_DS(on) @ 4.5 V.

GPU Power Delivery

ASIC Core Supply

Use Scenario: Transient-heavy GPU rail requiring fast response to 50 A/µs load steps and robust avalanche handling during fault conditions.

IC Role / Device Role / Timing Role: Primary high-side switch subjected to unclamped inductive switching during overcurrent events.

Use Value: 59 mJ single-pulse avalanche energy (E_AS) and 12 A avalanche current rating provide margin against inductive kickback without external snubbers.

Use Scenario: High-reliability core supply for AI accelerators or network ASICs operating at 0.75–0.95 V with strict ripple and thermal constraints.

IC Role / Device Role / Timing Role: Control FET in digitally controlled, adaptive-frequency buck converter with telemetry feedback.

Use Value: Tight V_GS(th) distribution (1.35–2.35 V) and −5.9 mV/°C tempco enable predictable turn-on timing across temperature, critical for phase alignment in multiphase loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6616TRPBF	Higher R_DS(on) (6.0 mΩ @ 10 V), same Q_g (11 nC), identical DirectFET SQ package	Slightly lower current rating (10 A vs. 12 A); suitable for lower-power VRMs or cost-sensitive designs	Select when thermal margin allows higher R_DS(on) and procurement favors older revision.
SiR626DP-T1-GE3	Lower R_DS(on) (4.0 mΩ @ 10 V), higher Q_g (15.5 nC), PowerPAK® SO-8 package (1.7 mm height)	Requires taller board clearance; higher gate drive loss limits max frequency vs. IRF6622TRPBF	Select when lowest conduction loss is prioritized over switching speed and board height.

Compared with IRF6622TRPBF, IRF6616TRPBF trades 22% higher conduction loss for identical switching performance and footprint, while SiR626DP-T1-GE3 reduces R_DS(on) by 18% but increases gate drive demand and board height - making IRF6622TRPBF the optimal balance for space-constrained, high-frequency CPU/GPU VRMs.

Availability

IRF6622TRPBF is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop voltage regulator modules, GPU power delivery systems, and ASIC core supplies requiring stable component supply and long-term industrial availability.

Supply support for IRF6622TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF6622TRPBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-density, high-efficiency DC-DC conversion in computing and communications infrastructure where thermal performance and switching speed are critical.

FAQ

What is the maximum continuous drain current for IRF6622TRPBF at 70°C ambient?

The IRF6622TRPBF supports 12 A continuous drain current at T_A = 70°C with V_GS = 10 V, provided the PCB layout provides adequate copper area for thermal dissipation. This rating assumes mounting on a 1 in² copper board with still air convection and accounts for derating per the 0.017 W/°C linear factor above 70°C ambient.

Does IRF6622TRPBF require a gate resistor for stability in synchronous buck applications?

Yes - a 2–5 Ω gate resistor is recommended to dampen ringing caused by interaction between gate driver output impedance and the MOSFET's low package inductance (<1 nH). The datasheet specifies R_G = 25 Ω for characterization, but practical designs use lower values (e.g., 2.2 Ω) to optimize switching speed while maintaining gate waveform integrity.

Can IRF6622TRPBF be used in parallel configurations?

Yes - its negative V_GS(th) temperature coefficient (−5.9 mV/°C) and matched R_DS(on) tolerance support stable current sharing in paralleled operation. Layout symmetry, individual gate resistors, and Kelvin source connections are required to ensure balanced dynamic current distribution across multiple devices in high-current VRM phases.

Is IRF6622TRPBF pin-compatible with standard SO-8 MOSFETs?

No - it uses the DirectFET SQ package with top-side drain and bottom-side source/gate pads, differing fundamentally from SO-8's through-hole or gull-wing leaded layout. While footprint area is similar to Micro-8, the terminal arrangement and thermal interface require dedicated PCB land patterns and assembly processes per AN-1035.

IRF6622TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric SQ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1450 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 34W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ SQ

IRF6622TRPBF FAQ

1.How can I place an order for IRF6622TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6622TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6622TRPBF reliable?

The price and inventory of IRF6622TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6622TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6622TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6622TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6622TRPBF?

IRF6622TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6622TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6622TRPBF?

For technical support, including IRF6622TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6622TRPBF requirements.

6.How does Aetrix verify that IRF6622TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6622TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6622TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6622TRPBF?

All IRF6622TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6622TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6622TRPBF part is unused and in its original packaging.

Return procedure for IRF6622TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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