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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6623

Name: IRF6623
Brand: Infineon Technologies
SKU: IRF6623
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6623

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ST

Datasheet:: IRF6623.pdf

Description:: MOSFET N-CH 20V 16A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6623 from Infineon Technologies is a 20 V, 5.7 mΩ (at V_GS = 10 V) N-channel Power MOSFET in DirectFET® ST package, optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers ultra-low gate charge (11 nC typ.), low-profile height (<0.7 mm), and dual-sided cooling capability for use in space-constrained, thermally demanding DC-DC applications.

For engineers reviewing the IRF6623 datasheet, IRF6623 pinout, IRF6623 application, or IRF6623 equivalent, key selection criteria include R_DS(on) at 4.5 V (9.7 mΩ), Q_g vs. switching loss trade-off, thermal resistance to PCB (1.0 °C/W), and compatibility with vapor-phase reflow per AN-1035.

Technical Context

The IRF6623 employs trench-gate HEXFET silicon combined with copper-clip DirectFET ST packaging to minimize parasitic inductance and maximize thermal conduction through both top and bottom metal surfaces. Its gate threshold voltage (1.55–2.45 V) and negative temperature coefficient of R_DS(on) support stable parallel operation in multiphase VRMs.

Designed specifically for 12 V input synchronous buck converters powering modern CPUs, it balances low conduction loss (R_DS(on) = 4.4 mΩ typ. at 10 V) and low switching loss (Q_gd = 4.0 nC, C_iss = 1360 pF) under high di/dt conditions (100 A/µs avalanche rating).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports 12 V bus input with margin for transient overshoot in CPU core regulators.
R_DS(on) @ 10 V	4.4 mΩ (typ.) / 5.7 mΩ (max) - Enables <1 W conduction loss at 15 A continuous drain current.
Q_g	11 nC (typ.) - Reduces gate drive power and enables efficient operation above 1 MHz switching frequency.
R_θJ-PCB	1.0 °C/W - Enables direct thermal coupling to PCB copper, critical for dual-sided cooling in thin-profile modules.
I_D @ T_C = 25°C	55 A - Sustains high pulsed load currents typical during CPU burst-mode operation.
Q_gd	4.0 nC - Limits Miller-induced shoot-through risk in high-side FET position of synchronous buck stage.
V_GS(th)	1.55–2.45 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers while avoiding false triggering.

Pinout & Package

IRF6623 uses the DirectFET® ST (Small Size Can, T-Designation) package - a surface-mount, copper-clip, top- and bottom-cooled metal-can structure measuring 4.75 × 3.70 × 0.26 mm (L × W × H), with no plastic molding compound. It features three terminals: Source (S), Drain (D), and Gate (G), arranged in a single-row layout compatible with MICRO-8 footprint geometries.

Pin/Terminal	Circuit Role	Design Meaning
S (Source)	Power return path and body diode anode	Connected to ground plane or low-side switch node; serves as primary thermal interface to PCB via bottom metal pad.
D (Drain)	Main power output path and body diode cathode	Connected to input bus (12 V); top-side metal surface provides secondary thermal path to heatsink or adjacent copper layer.
G (Gate)	Control terminal for channel modulation	Low-capacitance input (C_iss = 1360 pF) requiring minimal drive strength; isolated by 20 V max rating.

Key Features

Feature	Design Value
DirectFET ST packaging	0.7 mm profile + dual-sided cooling reduces R_θJA by 80% versus SO-8, enabling >50% higher power density.
Ultra-low Q_gd/Q_g ratio	36% (4.0/11 nC) - Minimizes Miller plateau duration and improves hard-switching robustness in high-dV/dt environments.
Body diode t_rr	20–30 ns - Supports fast synchronous rectification without external Schottky replacement in buck converters.
R_DS(on) tempco	Negative coefficient - Enables inherent current sharing in paralleled configurations without external ballasting.
Avalanche rated	E_AS = 160 mJ (T_J = 25°C) - Withstands unclamped inductive energy during transient fault conditions in VRM stages.

Applications

Server CPU Core VRM

Laptop Voltage Regulator Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to Intel/AMD server processors at up to 300 A peak.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET operating at 300–1000 kHz with tight dead-time control.

Use Value: 5.7 mΩ R_DS(on) and 1.0 °C/W R_θJ-PCB reduce conduction loss and junction temperature rise by 12°C versus SO-8 alternatives.

Use Scenario: Thin-profile notebook motherboard delivering 1–2 A to GPU or SoC cores with strict height constraints (<0.8 mm).

IC Role / Device Role / Timing Role: High-side control FET in compact 2-phase buck regulator with integrated controller.

Use Value: 0.7 mm height and MICRO-8-compatible layout allow placement beneath heat spreaders without mechanical interference.

Telecom Baseband Power Supply

Industrial FPGA Core Rail

Use Scenario: 12 V input, 1.0 V/40 A output power stage for 5G baseband ASICs requiring high reliability over -40 to +105°C.

IC Role / Device Role / Timing Role: Low-side FET in interleaved 4-phase topology with active current balancing.

Use Value: Negative R_DS(on) tempco and 150°C T_J(max) ensure stable current sharing across phases across full temperature range.

Use Scenario: Reconfigurable logic core rail (0.75–1.2 V, 20 A) in industrial PLC or motor drive controller with long product lifecycle.

IC Role / Device Role / Timing Role: Synchronous rectifier in discrete buck stage controlled by external PWM IC.

Use Value: Avalanche rating (E_AS = 160 mJ) and 20 V V_DS provide margin against bus transients in noisy factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6616	R_DS(on) = 6.7 mΩ @ 10 V; Q_g = 13 nC; same DirectFET ST package	Higher conduction loss but improved gate charge linearity for analog gate drive schemes	Prefer when gate drive voltage varies widely (3–10 V) and R_DS(on) margin >15% is acceptable.
SiR626DP	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 12.5 nC; PowerPAK® 1212-8 package (0.9 mm height)	Higher profile limits dual-sided cooling; slightly better R_DS(on) but higher C_iss (1520 pF)	Choose only if existing layout accommodates taller package and lower C_iss is not required for >1 MHz operation.

Compared with IRF6616 and SiR626DP, the IRF6623 offers the lowest R_DS(on) × Q_g figure-of-merit (62.7 mΩ·nC) among DirectFET ST devices, making it optimal for high-efficiency, high-frequency CPU core supplies where both conduction and switching losses must be minimized simultaneously.

Availability

IRF6623 is available at Aetrix Electronics and suitable for server CPU VRMs, laptop voltage regulator modules, and telecom baseband power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer channels.

Supply support for IRF6623 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The IRF6623 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where thermal performance and switching speed are critical.

FAQ

What is the maximum allowable gate-to-source voltage for IRF6623?

The absolute maximum V_GS rating is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be limited to 10–15 V for full enhancement, with transient spikes clamped below 18 V using Zener protection or gate resistors sized per AN-1035 recommendations.

Can IRF6623 be used in parallel configurations?

Yes - its negative R_DS(on) temperature coefficient (−5.4 mV/°C for V_GS(th)) and matched threshold voltage distribution enable stable current sharing across paralleled units without external source resistors, provided PCB layout symmetry and thermal coupling are maintained per DirectFET mounting guidelines.

Does IRF6623 require special soldering processes?

No special process is required, but successful assembly depends on following Infineon Application Note AN-1035: stencil aperture design (0.12 mm thickness, 0.35 mm openings), peak reflow temperature (260°C max, 10 sec), and vapor-phase or convection profiles validated for DirectFET ST's copper-clip construction and low-mass thermal mass.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the body diode has t_rr = 20–30 ns and Q_rr = 12–18 nC at T_J = 25°C, enabling clean commutation in synchronous buck topologies up to 1 MHz. However, for highest efficiency above 500 kHz, external Schottky clamping may still be used to further reduce recovery loss.

IRF6623 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric ST

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ ST

IRF6623 FAQ

1.How can I place an order for IRF6623 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6623 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6623 reliable?

The price and inventory of IRF6623 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6623 is usually 5 days.

3.What payment methods are accepted for IRF6623?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6623 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6623?

IRF6623 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6623 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6623?

For technical support, including IRF6623 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6623 requirements.

6.How does Aetrix verify that IRF6623 is sourced from the original manufacturer or authorized distributors?

All IRF6623 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6623 meets industry standards.

7.What is the process for return or replacement of IRF6623?

All IRF6623 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6623, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6623 part is unused and in its original packaging.

Return procedure for IRF6623:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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