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Infineon Technologies IRF6623TR1
- Part No.:
- IRF6623TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric ST
- Datasheet:
-
IRF6623TR1.pdf
- Description:
- MOSFET N-CH 20V 16A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,032
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Product details
Overview
IRF6623TR1 from Infineon Technologies (formerly International Rectifier) is a 20 V, 5.7 mΩ (at VGS = 10 V) N-channel Power MOSFET in DirectFETTM ST package, optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers ultra-low RDS(on), 11 nC total gate charge, and 0.7 mm profile with dual-sided cooling capability.
For engineers reviewing the IRF6623TR1 datasheet, IRF6623TR1 pinout, IRF6623TR1 application, or IRF6623TR1 equivalent, key selection criteria include conduction loss at 12 V input, switching loss under 1 MHz operation, thermal resistance to PCB (1.0 °C/W), body diode recovery (Qrr = 12–18 nC), and compatibility with existing MICRO-8 footprint layouts.
Technical Context
This MOSFET employs trench-gated HEXFET silicon and DirectFET ST packaging to minimize both RDS(on) and package inductance-critical for minimizing voltage overshoot and ringing in high-dV/dt CPU VRM phases. Its gate threshold (1.55–2.45 V) and low Qgd/Qg ratio (4.0/11 nC) support fast, controllable turn-on in adaptive gate drive topologies.
The device features a robust body diode with trr = 20–30 ns and Qrr = 12–18 nC, enabling efficient reverse recovery in synchronous rectification. Thermal design leverages direct die-to-PCB and die-to-heatsink paths via exposed source and drain terminals, achieving RθJ-PCB = 1.0 °C/W and RθJC = 3.0 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage compatible with 12 V input bus and transient margin in core DC-DC converters. |
| RDS(on) max @ VGS = 10 V | 5.7 mΩ - Enables ≤1.5 W conduction loss at 15 A continuous drain current in compact VRM phases. |
| Qg typ. | 11 nC - Supports efficient 1–2 MHz switching with moderate gate driver strength (e.g., 2 A peak). |
| RθJ-PCB | 1.0 °C/W - Allows direct thermal coupling to 2 oz copper PCB plane, eliminating need for discrete heatsinks in space-constrained modules. |
| trr | 20–30 ns - Limits reverse recovery energy loss during dead-time in synchronous buck, reducing shoot-through risk. |
| ID @ TC = 25°C | 55 A - Sustains high pulsed load currents during processor turbo boost without thermal runaway. |
| VGS(th) | 1.55–2.45 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers. |
Pinout & Package
IRF6623TR1 uses the DirectFETTM ST (Small Size Can, T-Designation) package - a surface-mount, leadless, double-sided cooling metal-can structure measuring 4.75 × 3.70 × 0.30 mm (L × W × H), with exposed source (top) and drain (bottom) terminals. No traditional leads; terminals are soldered directly to PCB pads per AN-1035 layout guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad (Source) | Source terminal (S) | Primary thermal path to top-side heatsink or copper pour; electrically connects to source node and provides low-inductance return path. |
| Bottom Metal Pad (Drain) | Drain terminal (D) | Main power output path; thermally coupled to PCB ground plane; enables dual-sided cooling when paired with top-side source pad. |
| Side Terminal (Gate) | Gate terminal (G) | Single edge-mounted solderable pad; isolated from drain/source; requires controlled trace routing to minimize gate loop inductance. |
Key Features
| Feature | Design Value |
|---|---|
| DirectFETTM ST packaging | 0.7 mm height and MICRO-8 footprint compatibility enable ultra-thin VRM designs while retaining manufacturability on standard SMT lines. |
| Ultra-low Qgd/Qg ratio | 4.0/11 nC (36%) reduces Miller-induced switching delay and improves controllability in hard-switched synchronous buck stages. |
| Low RθJ-PCB | 1.0 °C/W enables >90% of heat to be extracted through PCB, eliminating need for mechanical heatsinks in 30 W-class CPU phases. |
| Optimized body diode | Qrr = 12–18 nC and soft recovery reduce EMI and cross-conduction losses during dead-time in high-frequency operation. |
| 120 A pulsed drain rating | Supports transient current demands up to 120 A (10 µs pulse) during CPU burst loads without bondwire fusing or thermal saturation. |
Applications
| CPU Core Voltage Regulator | GPU Power Delivery Module |
|---|---|
|
Use Scenario: High-density, multi-phase buck converter supplying 0.8–1.5 V at up to 120 A to modern x86 or Arm-based processors. IC Role / Device Role / Timing Role: Control FET in synchronous buck stage, switching at 500 kHz–2 MHz with precise duty-cycle control. Use Value: 5.7 mΩ RDS(on) and 11 nC Qg jointly reduce combined conduction + switching loss by ≥25% vs. comparable SO-8 MOSFETs at 1 MHz. |
Use Scenario: Compact, fanless GPU power stage delivering 0.9–1.2 V at 60–90 A in embedded AI accelerators. IC Role / Device Role / Timing Role: High-side switch in interleaved 2-phase buck, operating with <10 ns propagation delay matching. Use Value: 0.7 mm profile allows stacking with inductors and capacitors in <8 mm² board area; dual-sided cooling maintains TJ < 105°C at full load. |
| Server Memory Channel Regulator | High-Efficiency Point-of-Load Converter |
|
Use Scenario: DDR5 memory VDDQ regulator requiring tight voltage regulation (<±10 mV) and fast transient response. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery to minimize dead-time penalty. Use Value: 20–30 ns trr and soft recovery waveform reduce output voltage dip during 10 A/µs load steps by 35% versus standard TrenchFETs. |
Use Scenario: Industrial FPGA or ASIC supply delivering 1.0–1.8 V at 20–40 A in space-constrained programmable logic modules. IC Role / Device Role / Timing Role: Primary switching element in 1 MHz fixed-frequency buck, driven by integrated controller PWM output. Use Value: RθJ-PCB = 1.0 °C/W enables full-rated current without derating on 4-layer boards with 2 oz inner layers, simplifying thermal validation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6614TR1PBF | RDS(on) = 7.0 mΩ @ 10 V; Qg = 9.5 nC; same DirectFET ST package | Slightly higher conduction loss but lower gate charge - better suited for gate-drive-limited 2 MHz+ designs with moderate current (<10 A avg) | Select when prioritizing switching speed over conduction efficiency in ultra-high-frequency, low-current POE rails. |
| SiR872DP-T1-GE3 | RDS(on) = 5.3 mΩ @ 10 V; Qg = 13.5 nC; PowerPAK® SO-8 package (1.6 mm height) | Lower RDS(on) but taller profile and higher Qg; no dual-sided cooling - relies on single-side PCB conduction | Select only if board stack height >0.8 mm is acceptable and top-side heatsinking is unavailable. |
Compared with IRF6623TR1, IRF6614TR1PBF trades 23% higher RDS(on) for 14% lower Qg, favoring high-frequency efficiency; SiR872DP-T1-GE3 achieves marginally lower resistance but sacrifices thermal performance and form factor, limiting use in ultra-thin VRMs.
Availability
IRF6623TR1 is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, DDR5 memory channel regulators, and high-efficiency point-of-load converters requiring stable component supply across extended production lifecycles.
Supply support for IRF6623TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.
The IRF6623TR1 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF6623TR1 supports 13 A continuous drain current at TA = 70°C with VGS = 10 V, assuming standard JEDEC 2-layer PCB layout per datasheet Figure 9. This rating assumes no forced airflow and relies on RθJA = 20 °C/W under those conditions.
Does the IRF6623TR1 require special soldering profiles?
Yes - DirectFET ST packaging requires adherence to Application Note AN-1035, including specific stencil aperture design (0.12 mm thickness, 0.35 × 0.35 mm openings), preheat ramp rates ≤2°C/s, and peak reflow temperature of 260°C for ≤10 seconds to avoid die attach voiding or terminal delamination.
Can IRF6623TR1 be used in avalanche mode?
Yes - it is rated for 43 mJ single-pulse avalanche energy at IAS = 5.2 A (TJ = 25°C), per Figure 13c. However, repetitive avalanche operation is not recommended; the device is designed for clamped inductive switching in synchronous buck topologies, not unclamped flyback or ZVS circuits.
Is the body diode suitable for synchronous rectification?
No - the body diode is not optimized for synchronous rectification; it serves only as a freewheeling path during dead-time. The IRF6623TR1 is intended as a control FET, and its companion low-side switch should be a dedicated synchronous rectifier MOSFET with lower Qrr and faster trr for optimal efficiency.
IRF6623TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric ST
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1360 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ ST
IRF6623TR1 FAQ
1.How can I place an order for IRF6623TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6623TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6623TR1 reliable?
The price and inventory of IRF6623TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6623TR1 is usually 5 days.
3.What payment methods are accepted for IRF6623TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6623TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6623TR1?
IRF6623TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6623TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6623TR1?
For technical support, including IRF6623TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6623TR1 requirements.
6.How does Aetrix verify that IRF6623TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6623TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6623TR1 meets industry standards.
7.What is the process for return or replacement of IRF6623TR1?
All IRF6623TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6623TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6623TR1 part is unused and in its original packaging.
Return procedure for IRF6623TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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