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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6623TR1PBF

Name: IRF6623TR1PBF
Brand: Infineon Technologies
SKU: IRF6623TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6623TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ST

Datasheet:: IRF6623TR1PBF.pdf

Description:: MOSFET N-CH 20V 16A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6623TR1PBF from Infineon Technologies (formerly International Rectifier) is a 20V N-channel Power MOSFET in DirectFET® ST package, optimized for synchronous buck CPU core DC-DC converters. It delivers 5.7 mΩ R_DS(on) at V_GS = 10 V, 9.7 mΩ at 4.5 V, 11 nC total gate charge, and ultra-low 0.7 mm profile with dual-sided cooling capability - enabling high-efficiency power delivery to modern high-frequency processors.

For engineers reviewing the IRF6623TR1PBF datasheet, IRF6623TR1PBF pinout, IRF6623TR1PBF application, or IRF6623TR1PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, minimized Q_gd (4.0 nC) for fast switching, thermal resistance R_θJC = 3.0 °C/W, compatibility with standard SMT reflow profiles up to 260 °C, and validated performance in 12 V input, multiphase VRM designs.

Technical Context

This MOSFET employs trench-gate HEXFET® silicon on a copper-clad DirectFET ST substrate, enabling symmetric top/bottom thermal paths and eliminating wirebonds to reduce parasitic inductance. Its gate threshold voltage (1.4–2.2 V) and negative temperature coefficient (−5.4 mV/°C) support stable operation across −40 °C to +150 °C junction range.

The device is characterized for clamped inductive switching with 12 A I_AS, 200 mJ E_AS, and 20–30 ns t_rr body diode recovery - critical for synchronous rectification where reverse recovery losses must be minimized in high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Supports 12 V bus input with margin for transient overshoot in CPU VRMs.
R_DS(on) max	5.7 mΩ @ 10 V - Enables <1 W conduction loss at 15 A continuous drain current.
R_DS(on) max	9.7 mΩ @ 4.5 V - Ensures low-loss operation with 5 V or logic-level gate drivers.
Q_g typ.	11 nC - Reduces gate drive power and enables >1 MHz switching in high-density converters.
Q_gd typ.	4.0 nC - Limits Miller-induced turn-off delay and improves hard-switching robustness.
R_θJC	3.0 °C/W - Allows direct heatsink mounting on drain-side for dual-sided thermal management.
t_rr	20–30 ns - Minimizes body diode reverse recovery loss during synchronous FET dead-time.

Pinout & Package

The IRF6623TR1PBF uses the DirectFET® ST (Small Size Can, T-Designation) package: 4.8 mm × 3.8 mm footprint, 0.7 mm height, copper substrate with exposed top-side drain and bottom-side source/gate terminals. Compatible with MICRO-8 PCB layouts and vapor-phase/reflow soldering per AN-1035.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary heat path; electrically and thermally connected to PCB copper pour or heatsink.
Bottom Left Pad	Source (S)	Low-inductance return path; forms part of low-impedance source loop in synchronous buck.
Bottom Right Pad	Gate (G)	Control terminal with low C_iss (1360 pF); isolated by substrate dielectric from drain.

Key Features

Feature	Design Value
Dual-sided cooling	Thermal resistance improved by 80% vs. SO-8; enables >40% higher power density in thin-profile VRMs.
Ultra-low package inductance	Eliminates bond wires; reduces switching voltage spikes and EMI in >500 kHz converters.
High dV/dt immunity	Rated for 12 V bus operation with fast edge rates; supports clean gate control under high di/dt load transients.
Lead-free & RoHS compliant	Qualified for 260 °C reflow; meets IPC/JEDEC J-STD-020 moisture sensitivity level 1.

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: Multiphase synchronous buck converter supplying 0.8–1.3 V / 50–150 A to desktop/mobile CPUs.

IC Role / Device Role / Timing Role: Control FET (high-side switch) operating at 300–1000 kHz with 4.5–10 V gate drive.

Use Value: 5.7 mΩ R_DS(on) and 11 nC Q_g minimize combined conduction and switching losses, improving full-load efficiency by ≥1.2% over SO-8 alternatives.

Use Scenario: Compact, low-profile VRM on discrete GPU PCBs requiring <0.7 mm component height.

IC Role / Device Role / Timing Role: High-side power switch in 2–4 phase topology with tight layout constraints.

Use Value: DirectFET ST footprint matches MICRO-8 land pattern while enabling dual-sided cooling - reducing hotspot temperature by 18 °C at 80 A.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: Point-of-load converter for DDR5 memory modules with strict thermal and height limits.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) driven by integrated controller with 4.5 V gate bias.

Use Value: 9.7 mΩ R_DS(on) at 4.5 V ensures <0.75 W conduction loss at 12 A, supporting JEDEC thermal envelope compliance.

Use Scenario: High-current power stage for FPGA or ASIC acceleration cards with burst-mode loads.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck with >1 MHz switching frequency.

Use Value: 4.0 nC Q_gd and 240 pF Crss suppress Miller turn-on risk during fast dV/dt transitions, preventing shoot-through.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6616TR1PBF	25 V rating, 4.2 mΩ R_DS(on) @ 10 V, 13 nC Q_g, same DirectFET ST package	Suitable for 12 V bus with higher voltage margin; slightly higher gate drive energy	Select when system requires >20 V transient tolerance without sacrificing thermal performance.
SiR626DP-T1-GE3	20 V, 5.0 mΩ @ 10 V, 12.5 nC Q_g, PowerPAK® 1212-8 package (0.95 mm height)	Higher profile limits board stacking; single-sided cooling only	Choose only if DirectFET ST assembly infrastructure is unavailable and 0.7 mm height is not mandatory.

Compared with IRF6616TR1PBF and SiR626DP-T1-GE3, the IRF6623TR1PBF offers the lowest profile and best thermal resistance (R_θJC = 3.0 °C/W), making it uniquely suited for ultra-thin VRMs where both height and junction temperature are constrained.

Availability

IRF6623TR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulation, GPU power delivery, DDR5 memory VRMs, and AI accelerator power stages requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for IRF6623TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and digital security solutions.

The DirectFET® product line was developed specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure - prioritizing thermal performance, low inductance, and SMT manufacturability over legacy packaging.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6623TR1PBF supports 12 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu board, double-sided cooling). This rating assumes no forced airflow and accounts for R_θJA = 20 °C/W under those conditions - verified per datasheet Figure 9 and Absolute Maximum Ratings table.

Does this MOSFET require a gate resistor for stability in synchronous buck operation?

Yes - a 2–5 Ω gate resistor is recommended between driver output and gate terminal to dampen ringing caused by low package inductance and PCB trace inductance. The 4.0 nC Q_gd and 240 pF Crss make it susceptible to Miller-induced oscillation without controlled gate drive impedance.

Can IRF6623TR1PBF be used as a low-side switch with 3.3 V gate drive?

No - its gate threshold voltage range is 1.4–2.2 V, but R_DS(on) rises sharply below 4.5 V. At 3.3 V, R_DS(on) exceeds 25 mΩ (extrapolated from Fig. 12), causing excessive conduction loss. It is rated and characterized only for ≥4.5 V gate drive in production applications.

Is the top metal pad electrically isolated from the PCB substrate?

No - the top metal pad is the Drain (D) terminal and is electrically connected to the internal silicon die. When mounted on a heatsink or thermal pad, it must be electrically isolated using a dielectric thermal interface material unless the drain node is at ground or chassis potential in the system design.

IRF6623TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric ST

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.4W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ ST

IRF6623TR1PBF FAQ

1.How can I place an order for IRF6623TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6623TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6623TR1PBF reliable?

The price and inventory of IRF6623TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6623TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6623TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6623TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6623TR1PBF?

IRF6623TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6623TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6623TR1PBF?

For technical support, including IRF6623TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6623TR1PBF requirements.

6.How does Aetrix verify that IRF6623TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6623TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6623TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6623TR1PBF?

All IRF6623TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6623TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6623TR1PBF part is unused and in its original packaging.

Return procedure for IRF6623TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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