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Infineon Technologies IRF6626
- Part No.:
- IRF6626
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric ST
- Datasheet:
-
IRF6626.pdf
- Description:
- MOSFET N-CH 30V 16A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,436
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Product details
Overview
IRF6626 from Infineon Technologies (acquired International Rectifier) is a 30 V, 16 A N-channel enhancement-mode Power MOSFET in DirectFET™ ST package, featuring 4.0 mΩ RDS(on) @ 10 V, 19 nC total gate charge, and ultra-low 0.7 mm profile - optimized for synchronous buck converters powering high-frequency CPU cores.
For engineers reviewing the IRF6626 datasheet, IRF6626 pinout, IRF6626 application, or IRF6626 equivalent, this device is selected for low-loss control FET and sync FET roles in 12 V input DC-DC converters where dual-sided cooling, <5.4 mΩ on-resistance at 4.5 V, and sub-10 nC Qgd are critical to minimize conduction and switching losses.
Technical Context
The IRF6626 uses trench-gate HEXFET® silicon with DirectFET™ ST packaging - a top-side-drain, bottom-side-source metal-can structure enabling dual-sided thermal interface. Its gate threshold voltage of 1.8 V (typ.) and −6.0 mV/°C tempco support stable 4.5 V logic-level drive across −40°C to +150°C junction range.
It delivers 80% lower junction-to-ambient thermal resistance versus prior packages under double-sided cooling (RθJA = 12.5°C/W), while its 260 pF Crss and 5.2 nC Qgs2 enable fast, low-overshoot switching in high-dV/dt environments typical of multiphase VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V max - supports 12 V bus systems with 2.5× voltage margin against transients. |
| RDS(on) | 4.0 mΩ @ VGS = 10 V - enables ≤1 W conduction loss at 16 A continuous drain current. |
| Qg | 19 nC typ. - reduces gate driver power demand and allows >1 MHz switching in compact VRMs. |
| Qgd | 6.7 nC typ. - limits Miller-induced shoot-through risk during hard-switching transitions. |
| RθJC | 3.0°C/W max - permits direct heatsink mounting to top (drain) surface for high-power density layouts. |
| ID @ TA = 70°C | 13 A - defines usable current derating for PCB-mounted operation without forced airflow. |
Pinout & Package
IRF6626 uses the DirectFET™ ST (Small Size Can, T-Designation) package: top-side drain metal can, bottom-side source pads, and center-top gate terminal - footprint compatible with MICRO-8 layouts but only 0.7 mm tall. Dual-sided cooling enabled via top (drain) and bottom (source) thermal interfaces.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 6, 7 (Top Metal Can) | Drain | Primary high-side switching node; electrically and thermally connected to top metal surface. |
| 3, 4 (Bottom Pads) | Source | Low-side return path; soldered to PCB ground plane for low-inductance current return and bottom-side cooling. |
| 5 (Center Top) | Gate | Control input requiring <2.35 V threshold; isolated from drain by 20 V max VGS rating. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling interface | Enables simultaneous top (drain) and bottom (source) thermal path attachment - reduces RθJA to 12.5°C/W vs. 58°C/W single-sided. |
| Ultra-low package inductance | Minimizes VDS ringing and EMI in >500 kHz switching applications due to symmetric, planar leadframe geometry. |
| Optimized for 4.5 V drive | RDS(on) = 5.2 mΩ @ 4.5 V - ensures full enhancement with standard logic-level PWM controllers in CPU VRMs. |
| Synchronous buck FET tuning | Low Qgd/Qg ratio (0.35) and 1.6 nC Qgs2 reduce dead-time sensitivity and improve light-load efficiency. |
Applications
| Server CPU Voltage Regulator | GPU Core Power Delivery |
|---|---|
Use Scenario: Multiphase buck converter supplying 0.8–1.3 V @ up to 300 A to modern x86 and ARM server CPUs. IC Role / Device Role / Timing Role: Control FET (high-side switch) operating at 300–1000 kHz with 12 V input. Use Value: 4.0 mΩ RDS(on) and 19 nC Qg cut conduction loss by 35% and gate loss by 22% vs. legacy SO-8 MOSFETs. |
Use Scenario: Compact 4–6 phase VRM on GPU reference boards delivering 0.9–1.2 V @ 200+ A. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) in high-frequency interleaved topology. Use Value: 0.7 mm height enables stacked inductor placement; dual-sided cooling sustains 13 A @ 70°C ambient without airflow. |
| Telecom Baseband Power | Industrial FPGA Core Supply |
Use Scenario: Isolated half-bridge DC-DC module converting 48 V to 1.0 V for 5G baseband ASICs. IC Role / Device Role / Timing Role: Secondary-side synchronous FET in active-clamp forward or LLC resonant converter. Use Value: 5.4 nC Qrr and 15 ns trr minimize body-diode reverse recovery loss during ZVS transitions. |
Use Scenario: Non-isolated point-of-load regulator powering Xilinx Versal or Intel Agilex FPGA core rails. IC Role / Device Role / Timing Role: High-efficiency control FET in 600 kHz–1.2 MHz buck stage with dynamic voltage scaling. Use Value: 1.8 V VGS(th) ensures reliable turn-on with 3.3 V GPIO control; −6 mV/°C tempco maintains timing stability over temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRF6642 | RDS(on) = 3.2 mΩ @ 10 V, Qg = 22 nC, same DirectFET™ ST package | Higher current handling (20 A) but increased gate charge raises switching loss at >1 MHz | Preferred when peak current exceeds 16 A and gate drive capability supports higher Qg |
| Vishay SiR626DP | RDS(on) = 4.1 mΩ @ 10 V, Qg = 17.5 nC, PowerPAK® 1212-8 package (0.9 mm height) | Single-sided cooling only; 0.2 mm taller profile limits board stacking density | Selected when DirectFET™ assembly process is unavailable and 0.7 mm height is not mandatory |
Compared with IRF6626, IRF6642 offers lower on-resistance for higher-current phases but trades off gate drive efficiency, while SiR626DP provides near-equivalent electrical specs in a more widely supported package at the cost of thermal performance and board-level height constraint compliance.
Availability
IRF6626 is available at Aetrix Electronics and suitable for server CPU voltage regulators, GPU core power delivery, telecom baseband DC-DC modules, and industrial FPGA core supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRF6626 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with headquarters in Munich, Germany.
The IRF6626 belongs to Infineon's DirectFET™ Power MOSFET product line - engineered specifically for high-frequency, high-density DC-DC conversion in computing and communications infrastructure where thermal and electrical performance per unit volume is critical.
FAQ
What is the maximum continuous drain current for IRF6626 at 70°C ambient?
The IRF6626 supports 13 A continuous drain current at TA = 70°C with surface-mount mounting on a 1-inch square copper board, as specified in the Absolute Maximum Ratings table. This value assumes no forced airflow and accounts for thermal derating from the 16 A rating at 25°C ambient.
Can IRF6626 be driven directly by a 3.3 V microcontroller GPIO?
No - the IRF6626 has a typical gate threshold voltage of 1.8 V but requires ≥4.5 V to achieve its rated 5.2 mΩ RDS(on). A 3.3 V GPIO cannot fully enhance the device, resulting in excessive conduction loss; a dedicated gate driver or level-shifter is required for reliable operation.
Is the IRF6626 RoHS compliant and halogen-free?
Yes - the IRF6626 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21, with lead-free DirectFET™ ST packaging and matte tin-plated top metal surface, as confirmed in Infineon's official material declaration PD-96976A.
What is the recommended PCB layout for optimal thermal performance?
Infineon Application Note AN-1035 specifies minimum copper area (≥200 mm² per source pad), 2 oz copper thickness, thermal vias under source pads (≥8 × 0.3 mm), and direct thermal interface to heatsink on top metal (drain). Stencil aperture must match DirectFET™ ST substrate dimensions to avoid solder voiding.
IRF6626 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric ST
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2380 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ ST
IRF6626 FAQ
1.How can I place an order for IRF6626 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6626 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6626 reliable?
The price and inventory of IRF6626 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6626 is usually 5 days.
3.What payment methods are accepted for IRF6626?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6626 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6626?
IRF6626 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6626 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6626?
For technical support, including IRF6626 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6626 requirements.
6.How does Aetrix verify that IRF6626 is sourced from the original manufacturer or authorized distributors?
All IRF6626 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6626 meets industry standards.
7.What is the process for return or replacement of IRF6626?
All IRF6626 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6626, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6626 part is unused and in its original packaging.
Return procedure for IRF6626:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF6626 Tags
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