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Infineon Technologies IRF6626TR1
- Part No.:
- IRF6626TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric ST
- Datasheet:
-
IRF6626TR1.pdf
- Description:
- MOSFET N-CH 30V 16A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,070
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Product details
Overview
IRF6626TR1 from Infineon Technologies (formerly International Rectifier) is a 30 V, 16 A N-channel Power MOSFET in DirectFET™ ST package, optimized for synchronous buck converters in CPU core DC-DC applications. It delivers 4.0 mΩ RDS(on) @ 10 V, 19 nC total gate charge, and ultra-low 0.7 mm profile with dual-sided cooling capability.
For engineers reviewing the IRF6626TR1 datasheet, IRF6626TR1 pinout, IRF6626TR1 application, or IRF6626TR1 equivalent, this part is selected for high-frequency switching power stages where conduction loss, switching loss, and thermal resistance are critical - especially in 12 V input, multiphase VRMs powering modern processors.
Technical Context
The IRF6626TR1 employs HEXFET® silicon in a copper-can DirectFET™ ST package with top-side drain terminals and bottom-side source/gate connections. Its layout enables dual-sided PCB cooling and achieves 3.0 °C/W junction-to-case thermal resistance.
It is specifically tuned for synchronous FET roles in buck converters: low Qgd/Qg ratio (6.7 nC / 19 nC), 5.2 mΩ RDS(on) @ 4.5 V, and 260 pF Crss support fast, low-loss transitions at >1 MHz switching frequencies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Withstands 12 V bus transients with margin in synchronous buck high-side or low-side positions. |
| RDS(on) @ 10 V | 4.0 mΩ - Enables ≤1 W conduction loss at 16 A continuous current in compact VRM layouts. |
| Qg Total | 19 nC - Reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency designs. |
| Qgd | 6.7 nC - Low Miller charge minimizes switching delay and improves immunity to dv/dt-induced turn-on in hard-switched topologies. |
| RθJC | 3.0 °C/W - Supports direct heatsink mounting to top drain surface, enabling dual-sided thermal path for <10 °C temperature rise at 20 W dissipation. |
| Package Height | 0.7 mm - Fits under low-profile VRM inductors and enables dense, stacked power stage layouts on thin PCBs. |
Pinout & Package
IRF6626TR1 uses the DirectFET™ ST (Small Size Can, T-Designation) package: a copper-can, top-drain, bottom-source/gate configuration with 7 terminals (dual drain pads, dual source pads, single gate). Dimensions: 4.8 × 3.9 × 0.7 mm. Compatible with MICRO-8 footprint layouts and standard SMT reflow processes per AN-1035.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 6, 7 (Drain) | Drain connection (top-side copper can) | Provides low-inductance, high-current path and primary thermal interface for heatsink mounting. |
| 3, 4 (Source) | Source connection (bottom-side pads) | Minimizes source loop inductance in synchronous FET placement; connects directly to ground plane. |
| 5 (Gate) | Gate control terminal (bottom-side pad) | Enables short, low-impedance gate routing adjacent to source; supports tight gate loop design. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Top-side drain and bottom-side source/gate allow simultaneous thermal interface to heatsink and PCB, improving thermal resistance by 80% vs. SO-8. |
| Ultra-low package inductance | DirectFET™ construction reduces parasitic LDS and LGS, enabling clean switching waveforms above 1 MHz without snubbers. |
| Optimized for 4.5 V drive | 5.2 mΩ RDS(on) @ 4.5 V supports logic-level gate drivers in space-constrained VRMs without level-shifting circuitry. |
| Synchronous FET + Control FET capable | Low Qgd/Qg ratio and 1.8 V VGS(th) enable reliable operation in both low-side sync-FET and high-side control-FET roles. |
Applications
| Server CPU Core VRM | GPU Power Delivery |
|---|---|
|
Use Scenario: Multiphase 12 V input → 0.8–1.2 V output buck converter supplying AMD/Intel server CPUs with dynamic load steps up to 300 A/µs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET operating at 500 kHz–1 MHz, commutated by dedicated PWM controller. Use Value: 4.0 mΩ RDS(on) and 19 nC Qg reduce conduction + switching losses by ≥15% vs. comparable SO-8 MOSFETs, enabling higher efficiency at full load. |
Use Scenario: Compact, high-density GPU voltage regulator modules requiring minimal board area and strict thermal envelope. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch in 3-phase or 4-phase interleaved buck stages. Use Value: 0.7 mm height allows stacking under low-profile chokes; dual-sided cooling maintains TJ < 110°C at 25 A continuous per phase. |
| AI Accelerator Board Power | High-Frequency Telecom DC-DC |
|
Use Scenario: Powering ASIC-based AI inference accelerators with burst-mode loads and tight voltage regulation (<±10 mV). IC Role / Device Role / Timing Role: Synchronous FET in adaptive on-time buck controller topology with 1–2 MHz switching frequency. Use Value: 260 pF Crss and 5.2 mΩ @ 4.5 V ensure stable zero-voltage switching behavior and minimal body diode conduction loss during dead-time. |
Use Scenario: Point-of-load (POL) converter in 5G baseband units requiring high reliability and low EMI in constrained chassis space. IC Role / Device Role / Timing Role: Primary switching element in isolated half-bridge or non-isolated buck converter with digital PMBus control. Use Value: Ultra-low package inductance suppresses ringing and dv/dt noise, reducing need for external RC snubbers and easing EMI filter design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6614TR1PBF | Same DirectFET™ ST package but 3.3 mΩ RDS(on) @ 10 V and 22 nC Qg; higher gate charge increases driver loss. | Better conduction loss at cost of higher switching loss; suited for lower-frequency (<600 kHz), higher-current phases. | Select when RDS(on) dominates system loss budget and gate drive capability permits higher Qg. |
| SiR626DP-T1-GE3 | Vishay 30 V TrenchFET® in PowerPAK® 1212-8; 4.2 mΩ @ 10 V, 17 nC Qg, but 1.0 mm height and single-sided cooling only. | Higher RθJA (25 °C/W vs. 12.5 °C/W with dual cooling); less effective in thermally dense VRMs. | Choose if existing layout uses PowerPAK footprint and thermal headroom exceeds 15 °C/W junction-to-ambient. |
Compared with IRF6626TR1, IRF6614TR1PBF trades higher gate charge for lower RDS(on), while SiR626DP-T1-GE3 sacrifices thermal performance for broader distributor availability - making IRF6626TR1 optimal for space- and thermally constrained high-frequency CPU/GPU VRMs.
Availability
IRF6626TR1 is available at Aetrix Electronics and suitable for server CPU core VRMs, AI accelerator board power, and high-frequency telecom DC-DC converters requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for IRF6626TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device development.
The IRF6626TR1 belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current for IRF6626TR1 at 70°C ambient?
The IRF6626TR1 supports 13 A continuous drain current at TA = 70°C with proper PCB copper area and airflow. This rating assumes surface mounting on a 1 in² copper board per datasheet condition h. Derating is linear at 17 mW/°C above 70°C ambient.
Can IRF6626TR1 be used as a high-side control FET in a synchronous buck converter?
Yes - its 1.8 V gate threshold voltage, 5.2 mΩ RDS(on) @ 4.5 V, and low Qgd (6.7 nC) support robust high-side operation with bootstrap gate drivers. However, external level-shifting is required for 10 V drive due to lack of integrated charge pump.
Does IRF6626TR1 include an integrated Schottky diode?
No. The IRF6626TR1 contains only the intrinsic body diode of the N-channel MOSFET. Its reverse recovery charge (Qrr) is 5.4 nC, and trr is 15 ns - typical for silicon HEXFET devices. External Schottky or GaN co-packaged diodes are not integrated.
Is the DirectFET™ ST package RoHS-compliant and lead-free?
Yes. IRF6626TR1 is manufactured in a lead-free, RoHS-compliant process. The DirectFET™ ST package uses matte tin-plated copper leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life before reflow.
IRF6626TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric ST
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2380 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ ST
IRF6626TR1 FAQ
1.How can I place an order for IRF6626TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6626TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6626TR1 reliable?
The price and inventory of IRF6626TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6626TR1 is usually 5 days.
3.What payment methods are accepted for IRF6626TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6626TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6626TR1?
IRF6626TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6626TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6626TR1?
For technical support, including IRF6626TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6626TR1 requirements.
6.How does Aetrix verify that IRF6626TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6626TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6626TR1 meets industry standards.
7.What is the process for return or replacement of IRF6626TR1?
All IRF6626TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6626TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6626TR1 part is unused and in its original packaging.
Return procedure for IRF6626TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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