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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6626TR1PBF

Name: IRF6626TR1PBF
Brand: Infineon Technologies
SKU: IRF6626TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6626TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ST

Datasheet:: IRF6626TR1PBF.pdf

Description:: MOSFET N-CH 30V 16A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6626TR1PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 60 V V_DS, 80 A continuous drain current at T_C = 25°C, and 3.3 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6626TR1PBF datasheet, IRF6626TR1PBF pinout, IRF6626TR1PBF application, or IRF6626TR1PBF equivalent, key selection criteria include its low gate charge (Q_g = 60 nC), fast switching speed (t_fall = 22 ns), and optimized body diode recovery (t_rr = 55 ns) for hard-switched and synchronous rectification topologies.

Technical Context

This Generation 3 HEXFET device uses planar silicon process with optimized cell pitch and trench-assisted source contact to reduce R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling robust turn-on with standard 10 V gate drivers.

The MOSFET features a fully characterized avalanche rating (E_AS = 290 mJ at T_J = 25°C), specified safe operating area (SOA) up to 10 ms, and qualified per JEDEC JESD47 for industrial temperature range (−55°C to +175°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage in off-state; supports 48 V bus systems with margin.
R_DS(on) @ V_GS=10 V	3.3 mΩ typ - Enables <1 W conduction loss at 50 A, critical for high-current DC-DC phases.
I_D (continuous)	80 A @ T_C=25°C - Requires heatsinking above 70°C case temperature to maintain rating.
Q_g	60 nC - Determines gate driver power requirement; enables efficient 500 kHz switching with low-loss drivers.
t_rr	55 ns - Reduces reverse recovery loss in synchronous rectifiers vs. standard diodes.
E_AS	290 mJ - Supports single-pulse inductive switching without failure under defined test conditions.

Pinout & Package

Package: TO-247AC (3-pin, straight lead, isolated tab). Thermal resistance R_θJC = 0.45°C/W.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground.
Gate	Control electrode	High-impedance input requiring <60 nC charge for full enhancement; sensitive to ESD.
Source	Reference node for gate drive	Serves as return path for load current and gate drive loop; layout minimizes inductance for stability.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g	198 Ω·nC - Improves efficiency in high-frequency switching converters by reducing combined conduction and switching losses.
Fast body diode recovery	t_rr = 55 ns - Minimizes shoot-through risk and energy loss during commutation in synchronous rectification.
Enhanced avalanche ruggedness	E_AS = 290 mJ - Allows reliable operation in inductive switching circuits without external snubbers.
JEDEC JESD47 qualified	Industrial temp range (−55°C to +175°C) - Ensures reliability in motor drives and industrial power supplies.

Applications

Server VRM Phase Legs

Automotive DC-DC Converters

Use Scenario: High-density 12 V → 1 V/30 A buck converter in CPU/GPU voltage regulator modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in bottom-FET position, switching at 500–1000 kHz.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 5.5 mΩ devices at 40 A, improving VRM efficiency by 1.2%.

Use Scenario: 48 V → 12 V bidirectional DC-DC stage in 48 V mild-hybrid vehicle architecture.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology.

Use Value: 60 nC Q_g enables gate drive with low-power ICs (e.g., UCC27282), reducing driver BOM cost and PCB area.

Industrial Motor Drives

Telecom Rectifier Modules

Use Scenario: 3-phase inverter stage driving 3 kW PMSM in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, operating at 8–16 kHz PWM.

Use Value: 290 mJ E_AS rating ensures robustness against motor winding inductance flyback without clamping circuits.

Use Scenario: Secondary-side synchronous rectification in 3 kW telecom rectifier (−48 V output).

IC Role / Device Role / Timing Role: Parallel-connected rectifier FET with active gate control.

Use Value: 55 ns t_rr eliminates need for external Schottky catch diodes, reducing thermal stress and component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642PBF	R_DS(on) = 2.2 mΩ @ 10 V (lower), Q_g = 72 nC (higher), same TO-247 package	Better conduction loss but higher switching loss; suited for <300 kHz operation	Select when thermal budget favors lower R_DS(on) over gate drive capability
IPB60R099CP	600 V rating, 99 mΩ R_DS(on), Superjunction technology, TO-220FP package	Not voltage-compatible; intended for offline SMPS, not 48/60 V systems	Only viable if redesigning for higher bus voltage and accepting higher R_DS(on)

Compared with IRF6626TR1PBF, IRF6642PBF trades higher gate charge for lower on-resistance-ideal for thermally constrained, lower-frequency designs-while IPB60R099CP belongs to a different voltage class and cannot replace it without circuit rework.

Availability

IRF6626TR1PBF is available at Aetrix Electronics and suitable for server VRMs, automotive DC-DC converters, and industrial motor drives requiring stable component supply, long-term manufacturability, and traceable sourcing.

Supply support for IRF6626TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

The IRF6626TR1PBF belongs to Infineon's legacy HEXFET® Generation 3 power MOSFET product line, engineered for high-current, medium-voltage switching in power conversion systems demanding low R_DS(on) and fast switching.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF6626TR1PBF is rated for continuous operation up to T_J = +175°C, validated per JEDEC JESD47. Derating is required above T_C = 25°C; at T_C = 100°C, continuous I_D drops to 45 A. Thermal design must ensure R_θJA remains below 1.2°C/W for ambient-limited applications.

Is this part suitable for paralleling multiple devices?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing when paralleled. Layout must balance gate loop inductance and source inductance across all units; gate resistors ≥4.7 Ω per device are recommended to damp oscillation and equalize turn-on timing.

Does it have integrated ESD protection?

No-the IRF6626TR1PBF lacks on-chip ESD protection diodes. Gate oxide is rated for ±30 V HBM per JEDEC 22-A114, so external TVS or RC snubbers on gate traces are mandatory in automated assembly or high-noise environments.

Can it replace IRF1404 in existing designs?

Yes-with caveats: both are TO-247 N-channel MOSFETs, but IRF6626TR1PBF has lower R_DS(on) (3.3 mΩ vs. 4.7 mΩ) and higher Q_g (60 nC vs. 131 nC). Gate drive strength may need verification; reduced conduction loss improves efficiency, but faster switching increases EMI risk if layout is unchanged.

IRF6626TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric ST

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.4mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2380 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ ST

IRF6626TR1PBF FAQ

1.How can I place an order for IRF6626TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6626TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6626TR1PBF reliable?

The price and inventory of IRF6626TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6626TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6626TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6626TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6626TR1PBF?

IRF6626TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6626TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6626TR1PBF?

For technical support, including IRF6626TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6626TR1PBF requirements.

6.How does Aetrix verify that IRF6626TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6626TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6626TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6626TR1PBF?

All IRF6626TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6626TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6626TR1PBF part is unused and in its original packaging.

Return procedure for IRF6626TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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