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Infineon Technologies IRF6626TRPBF
- Part No.:
- IRF6626TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric ST
- Datasheet:
-
IRF6626TRPBF.pdf
- Description:
- MOSFET N-CH 30V 16A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,926
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Product details
Overview
IRF6626TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 60 V VDS, 80 A continuous drain current at TC = 25°C, and 3.3 mΩ typical RDS(on) at VGS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF6626TRPBF datasheet, IRF6626TRPBF pinout, IRF6626TRPBF application, or IRF6626TRPBF equivalent, key selection criteria include its low gate charge (Qg = 62 nC), fast switching speed (tfall = 22 ns), and robust avalanche rating (EAS = 490 mJ), critical for high-frequency hard-switched topologies.
Technical Context
This Generation 3 HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-assisted gate design to achieve low RDS(on) × Qg figure-of-merit. Its threshold voltage (VGS(th)) ranges 2.0–4.0 V, enabling reliable turn-on with standard 10 V gate drivers.
The MOSFET features fully characterized SOA curves up to 100 µs, specified avalanche energy rating, and guaranteed 100% UIS testing. Thermal resistance RθJC is 0.50°C/W, supporting high-power density PCB layouts with minimal heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage in off-state; suitable for 48 V bus systems and automotive 36 V nominal applications. |
| RDS(on) @ VGS=10 V | 3.3 mΩ typ - Enables <1 W conduction loss at 50 A, reducing thermal stress in high-current paths. |
| ID (continuous) | 80 A @ TC = 25°C - Supports high-current switching without derating in forced-air-cooled designs. |
| Qg | 62 nC - Low gate charge minimizes driver power and enables >500 kHz operation with standard gate drivers. |
| EAS | 490 mJ - Rated single-pulse avalanche energy ensures robustness against inductive switching transients. |
| RθJC | 0.50°C/W - Enables efficient heat transfer to heatsink; allows 100 W dissipation with ≤50°C temperature rise. |
Pinout & Package
Package: TO-247AC (3-pin, isolated tab). Standard leadform with drain-connected tab for direct heatsink mounting and low-inductance source-drain loop.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current return path to power rail | Electrically connected to metal tab; must be insulated from chassis unless system ground reference permits. |
| Gate | Control electrode for channel modulation | High-impedance input requiring <100 Ω series gate resistor to suppress ringing and limit dV/dt-induced turn-on. |
| Source | Reference node for gate drive and current sensing | Low-inductance connection point for Kelvin source routing and shunt-based current monitoring. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) × Qg | 205 Ω·nC - Reduces total switching + conduction losses in high-frequency SMPS, improving efficiency by ≥1.2% at 300 kHz. |
| 100% UIS tested | Guaranteed avalanche capability per JEDEC JESD24-11 - Eliminates need for external snubbers in inductive load switching. |
| Enhanced dv/dt ruggedness | Rated for 4.5 V/ns - Prevents false turn-on during fast voltage transients in half-bridge configurations. |
| Lead-free and RoHS compliant | Meets IPC/JEDEC J-STD-020D reflow profile - Compatible with standard Pb-free assembly processes up to 260°C peak. |
Applications
| Server VRM Power Stage | Industrial BLDC Inverter |
|---|---|
Use Scenario: High-density 48 V input buck converter delivering 100 A to CPU core rails. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage, operating at 600 kHz with interleaved gate drive. Use Value: 3.3 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 5.2 mΩ MOSFETs, lowering junction temperature by 18°C at full load. | Use Scenario: 3-phase inverter driving 5 kW permanent-magnet motor in CNC spindle control. IC Role / Device Role / Timing Role: Upper-leg switch in 600 V DC bus inverter, commutated at 12 kHz with active Miller clamp. Use Value: 62 nC Qg enables use of low-cost 2 A gate drivers while maintaining <150 ns turn-off delay, minimizing shoot-through risk. |
| Automotive On-Board Charger | Telecom DC-DC Brick |
Use Scenario: Bidirectional AC/DC + DC/DC stage in 6.6 kW OBC handling 400 V battery and 230 V AC input. IC Role / Device Role / Timing Role: Primary-side switch in CLLC resonant converter, operating in ZVS mode above 100 kHz. Use Value: 490 mJ EAS rating supports safe operation during soft-start and fault recovery without additional clamping circuitry. | Use Scenario: 48 V to 12 V intermediate bus converter in 1 RU telecom shelf with strict thermal envelope. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology. Use Value: 0.50°C/W RθJC allows 80 A conduction within 65°C case temperature limit using only 40 mm² copper pour, eliminating external heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | RDS(on) = 2.2 mΩ @ 10 V; Qg = 95 nC; TO-247 long leads | Lower RDS(on) but higher gate charge increases driver loss at >300 kHz | Prefer for <300 kHz, high-current, low-thermal-resistance designs where gate drive power is secondary. |
| IXFH60N60X3 | VDS = 600 V; RDS(on) = 22 mΩ; Qg = 125 nC; TO-247 non-isolated | Higher voltage rating sacrifices RDS(on) and switching speed for HV industrial isolation | Select only when 600 V blocking is mandatory; not drop-in for 60 V systems due to excessive conduction loss. |
Compared with STL220N6F7 and IXFH60N60X3, IRF6626TRPBF offers optimal balance of low RDS(on), moderate Qg, and proven 60 V avalanche reliability-making it preferred for high-frequency, thermally constrained 48 V power stages where both efficiency and layout simplicity matter.
Availability
IRF6626TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, automotive on-board chargers, and telecom DC-DC bricks requiring stable component supply and long-term production continuity.
Supply support for IRF6626TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
IRF6626TRPBF belongs to the HEXFET® Generation 3 power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in server, telecom, and industrial power conversion systems.
FAQ
What is the maximum pulsed drain current (IDM) for IRF6626TRPBF?
The maximum pulsed drain current is 320 A, specified at TC = 25°C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating assumes ideal heatsinking and accounts for transient thermal impedance limitations-not steady-state capability. Designers must verify SOA compliance under actual operating conditions using the published Safe Operating Area graph.
Does IRF6626TRPBF require a negative gate turn-off voltage?
No. IRF6626TRPBF has a positive VGS(th) range of 2.0–4.0 V and is designed for 0 V to +10 V or +15 V gate drive. A negative turn-off voltage is unnecessary and not recommended; standard TTL- or CMOS-compatible gate drivers with 0 V low-state output are sufficient for reliable turn-off.
Can IRF6626TRPBF be paralleled with identical units?
Yes-its positive temperature coefficient of RDS(on) enables stable current sharing. For reliable paralleling, match gate resistors within ±5%, ensure symmetrical PCB layout with equal trace lengths, and use Kelvin source connections. Derate total current by 15% to account for thermal coupling and manufacturing tolerances.
Is the TO-247AC package electrically isolated?
No-the TO-247AC package has a conductive drain-connected tab. The metal tab is internally bonded to the drain terminal and must be electrically isolated from the heatsink using insulating pads or shoulder washers unless the system design intentionally references the drain to chassis ground.
IRF6626TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric ST
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.4mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2380 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ ST
IRF6626TRPBF FAQ
1.How can I place an order for IRF6626TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6626TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6626TRPBF reliable?
The price and inventory of IRF6626TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6626TRPBF is usually 5 days.
3.What payment methods are accepted for IRF6626TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6626TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6626TRPBF?
IRF6626TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6626TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6626TRPBF?
For technical support, including IRF6626TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6626TRPBF requirements.
6.How does Aetrix verify that IRF6626TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF6626TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6626TRPBF meets industry standards.
7.What is the process for return or replacement of IRF6626TRPBF?
All IRF6626TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6626TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6626TRPBF part is unused and in its original packaging.
Return procedure for IRF6626TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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