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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6628TR1PBF

Name: IRF6628TR1PBF
Brand: Infineon Technologies
SKU: IRF6628TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6628TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6628TR1PBF.pdf

Description:: MOSFET N-CH 25V 27A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6628TR1PBF from Infineon Technologies is a 25 V, 27 A N-channel DirectFET™ Power MOSFET optimized for synchronous buck CPU core DC-DC converters. It delivers 1.9 mΩ R_DS(on) at V_GS = 10 V, 31 nC total gate charge, and 1.9 V gate threshold voltage, enabling high-efficiency operation in high-frequency power stages with dual-sided cooling capability.

For engineers reviewing the IRF6628TR1PBF datasheet, IRF6628TR1PBF pinout, IRF6628TR1PBF application, or IRF6628TR1PBF equivalent, key selection criteria include low conduction loss (R_DS(on) ≤ 2.5 mΩ @ 4.5 V), high C_dv/dt immunity, ultra-low profile (<0.7 mm), and compatibility with standard SMT reflow processes per AN-1035.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-clip DirectFET™ package with top-side drain and bottom-side source terminals, enabling dual-sided thermal management. Its gate charge profile (Q_gs2 = 4.1 nC, Q_gd = 12 nC) and low Crss (500 pF) minimize switching losses and reduce risk of spurious turn-on in high-dV/dt synchronous FET positions.

The device is characterized for stable operation across –40°C to +150°C junction temperature, with ±20 V gate drive tolerance, 22 A pulsed avalanche current rating, and 26 nC reverse recovery charge (Q_rr) supporting robust body diode commutation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage compatible with 12 V input bus and 3.3 V/1.8 V/1.0 V output rails in multiphase CPU VRMs.
R_DS(on) @ 10 V	1.9 mΩ - Enables <1 W conduction loss at 27 A continuous drain current in compact PCB footprints.
R_DS(on) @ 4.5 V	2.5 mΩ - Ensures usable on-resistance under logic-level gate drive from modern PWM controllers.
Q_g total	31 nC - Balances switching speed and gate driver loading for 300–1000 kHz converter operation.
C_oss	970 pF - Low output capacitance reduces turn-off energy and improves light-load efficiency.
V_GS(th)	1.9 V (typ) - Supports reliable enhancement-mode turn-on with margin above 1.2 V control rail noise.
Q_rr	26 nC - Limits reverse recovery loss during high-frequency synchronous rectification.

Pinout & Package

IRF6628TR1PBF uses the DirectFET™ SQ package: ultra-low-profile (0.6 mm max height), copper-clip construction with top-side drain (D) and bottom-side source (S) terminals. No separate gate pad; gate connects via perimeter bond wires to the top metal layer.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-current path for power delivery; thermally coupled to heatsink or PCB copper pour.
Bottom Metal Pad	Source (S)	Low-inductance return path; enables dual-sided cooling when mounted on metal-core PCB.
Perimeter Bond Pads	Gate (G)	Control terminal with 1.2 Ω internal gate resistance; requires <10 ns rise time for optimal switching.

Key Features

Feature	Design Value
DirectFET™ SQ packaging	0.6 mm profile and dual-sided thermal interface reduce R_θJA by 80% vs SO-8, enabling >27 A continuous operation on 1-in² Cu board.
Low Q_gd/Q_g ratio	12 nC / 31 nC = 0.39 - Improves Miller immunity and reduces required gate drive energy for fast transitions.
High C_dv/dt immunity	Rated for hard-switched operation up to 250 A/µs - prevents false turn-on in high-side synchronous FET position.
RoHS-compliant lead-free	Qualified for 260°C reflow - supports automated SMT assembly without solder joint reliability concerns.

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: Multiphase synchronous buck converter supplying 0.8–1.3 V at up to 200 A to modern x86 or ARM processors.

IC Role / Device Role / Timing Role: High-side synchronous FET handling rapid 300–1000 kHz switching with tight dead-time control.

Use Value: 1.9 mΩ R_DS(on) and 31 nC Q_g enable >95% efficiency at full load while maintaining thermal headroom on dense motherboard layouts.

Use Scenario: Dual-phase 12 V input → 0.9 V output VRM powering discrete graphics processing units.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating with 100% duty cycle capability and low body diode V_SD.

Use Value: 2.5 mΩ R_DS(on) @ 4.5 V ensures minimal conduction loss under logic-level gate drive from integrated controller ICs.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: Single-phase 5 V input → 1.2 V output regulator for DDR5 memory modules with dynamic current demand.

IC Role / Device Role / Timing Role: High-frequency switching FET requiring fast turn-on and low Q_rr for clean transient response.

Use Value: 26 nC Q_rr and 21 nC Q_oss minimize recovery-related losses during load-step transients up to 100 A/µs.

Use Scenario: High-density 48 V → 0.8 V intermediate bus converter feeding ASIC-based AI training accelerators.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in interleaved LLC or buck-derived topology.

Use Value: Dual-sided cooling support allows direct thermal coupling to cold plate, sustaining >25 A continuous current without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TR1PBF	25 V, 34 A, R_DS(on) = 1.5 mΩ @ 10 V, Q_g = 34 nC - lower R_DS(on) but higher gate charge.	Better conduction loss at high current; less suitable for very high-frequency (>1 MHz) operation due to higher Q_g.	Select when thermal budget is tighter than switching loss budget; verify gate driver capability for 34 nC load.
SiR626DP-T1-GE3	25 V, 30 A, R_DS(on) = 1.7 mΩ @ 10 V, Q_g = 27 nC - slightly lower Q_g, same package footprint.	Improved switching efficiency at 500–800 kHz; different thermal pad layout affects PCB thermal design.	Prefer for new designs targeting lowest overall loss; requires layout revision for thermal pad alignment.

Compared with IRF6628TR1PBF, IRF6622TR1PBF trades higher gate charge for lower R_DS(on), while SiR626DP-T1-GE3 offers better Q_g/R_DS(on) balance but demands updated thermal pad routing - all three maintain DirectFET™-compatible mounting and 25 V rating.

Availability

IRF6628TR1PBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power delivery systems, server memory regulators, and AI accelerator power stages requiring stable component supply, RoHS-compliant lead-free assembly, and high-reliability thermal performance.

Supply support for IRF6628TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The DirectFET™ product line was engineered specifically for high-frequency, high-current DC-DC conversion in computing and data center applications, prioritizing thermal performance, switching efficiency, and SMT manufacturability over legacy package constraints.

FAQ

What is the maximum continuous drain current for IRF6628TR1PBF at 70°C ambient?

The IRF6628TR1PBF supports 16 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu board). This rating assumes surface-mount installation with thermocouple-measured case temperature and steady-state thermal conditions per datasheet Fig. 12.

Does IRF6628TR1PBF require a gate resistor for stability in synchronous buck applications?

Yes - a 25 Ω gate resistor is specified in the datasheet's unclamped inductive test condition (IAS = 22 A). This value damps ringing, controls dv/dt, and prevents oscillation during hard switching; values below 10 Ω increase risk of gate overshoot and shoot-through in multiphase layouts.

Can IRF6628TR1PBF be used in place of SO-8 packaged MOSFETs without PCB redesign?

Yes - the DirectFET™ SQ package maintains the same 5.0 × 6.0 mm footprint as SO-8, allowing drop-in replacement on existing layouts. However, thermal vias and copper pour must be adapted to accommodate top-side drain and bottom-side source connections per AN-1035 guidelines.

What is the typical reverse recovery time (t_rr) of the body diode in IRF6628TR1PBF?

The body diode exhibits t_rr = 21 ns (typ) at T_J = 25°C, I_F = 22 A, and di/dt = 250 A/µs. This fast recovery supports efficient synchronous rectification and minimizes cross-conduction loss during dead-time intervals in buck converters.

IRF6628TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 96W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6628TR1PBF FAQ

1.How can I place an order for IRF6628TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6628TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6628TR1PBF reliable?

The price and inventory of IRF6628TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6628TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6628TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6628TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6628TR1PBF?

IRF6628TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6628TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6628TR1PBF?

For technical support, including IRF6628TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6628TR1PBF requirements.

6.How does Aetrix verify that IRF6628TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6628TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6628TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6628TR1PBF?

All IRF6628TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6628TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6628TR1PBF part is unused and in its original packaging.

Return procedure for IRF6628TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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