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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6628TRPBF

Name: IRF6628TRPBF
Brand: Infineon Technologies
SKU: IRF6628TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6628TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6628TRPBF.pdf

Description:: MOSFET N-CH 25V 27A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6628TRPBF from Infineon Technologies is a 25V N-channel DirectFET™ Power MOSFET optimized for synchronous buck CPU core DC-DC converters, featuring 1.9 mΩ R_DS(on) @ 10 V, 31 nC total gate charge, ±20 V V_GS, 22 A continuous drain current at T_C = 25°C, and dual-sided cooling capability in a low-profile (0.6 mm) package.

For engineers reviewing the IRF6628TRPBF datasheet, IRF6628TRPBF pinout, IRF6628TRPBF application, or IRF6628TRPBF equivalent, this part supports high-frequency, high-efficiency power delivery where low conduction loss, high C_dv/dt immunity, and ultra-low package inductance are critical in server and notebook VRM designs.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET™ packaging to achieve industry-leading R_DS(on)-to-gate-charge trade-off: 1.9 mΩ @ 10 V and 2.5 mΩ @ 4.5 V, with Q_g = 31 nC and Q_gd = 12 nC. Its gate threshold voltage is tightly specified at 1.9 V (typ), with -6.0 mV/°C temperature coefficient.

The device integrates a robust body diode (V_SD ≤ 1.0 V, Q_rr = 26 nC, t_rr = 21 ns) and delivers 80% lower junction-to-ambient thermal resistance versus prior SO-8 equivalents when mounted with dual-sided cooling on copper PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input synchronous buck stages with margin.
R_DS(on)	1.9 mΩ @ 10 V - Enables <1 W conduction loss at 22 A in high-current CPU core rails.
Q_g	31 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength.
C_iss	3770 pF - Low input capacitance reduces Miller effect and improves dv/dt noise immunity.
V_GS(th)	1.9 V (typ) - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drive.
R_θJC	1.3 °C/W - Enables high-power density thermal design using direct case-to-heatsink contact.
I_D (cont)	22 A @ T_C = 25°C - Rated for sustained operation in compact VRM phases with active heatsinking.

Pinout & Package

IRF6628TRPBF uses the DirectFET™ SQ (Standard Quad) package: surface-mount, 0.6 mm profile, metal top (Drain), bottom-side source/ground terminals, and dual-sided thermal interface. Dimensions: 6.25 × 4.80 × 0.6 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current output node; serves as thermal path to heatsink or copper plane.
Bottom Left Pad	Source (S)	Low-side return path; electrically and thermally connected to PCB ground plane.
Bottom Right Pad	Gate (G)	Control terminal with 1.2 Ω internal gate resistance; requires Kelvin-source layout for stability.
Bottom Center Pad	Source (S)	Redundant source connection to minimize loop inductance and improve current sharing.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	59 mΩ·nC - Reduces combined conduction + switching losses in high-frequency VRMs.
Dual-sided cooling interface	1.3 °C/W R_θJC - Enables >80% thermal improvement over SO-8 by routing heat through both top and bottom surfaces.
High C_dv/dt immunity	Rated for 250 A/µs di/dt - Prevents false turn-on during fast transient load steps in multiphase converters.
Low-profile DirectFET™ SQ package	0.6 mm height - Fits under low-clearance heatsinks and enables dense, low-inductance PCB layouts.

Applications

CPU Core VRM Phase

GPU Voltage Regulator

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to modern x86 or ARM processors at up to 100 A per phase.

IC Role / Device Role / Timing Role: Synchronous high-side FET switching at 500 kHz–1.2 MHz with precise dead-time control.

Use Value: 1.9 mΩ R_DS(on) minimizes I²R loss at peak load; low Q_gd ensures clean turn-off during fast dV/dt transitions.

Use Scenario: Compact, high-density VRM for discrete or integrated GPUs requiring rapid load-step response and tight voltage regulation.

IC Role / Device Role / Timing Role: Low-inductance, low-R_DS(on) power switch in 3–6 phase interleaved topology.

Use Value: Dual-sided cooling maintains T_J < 125°C under 70 A steady-state; 2.5 mΩ @ 4.5 V supports 3.3 V gate drive in space-constrained modules.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: DDR5 memory subsystem regulator delivering 1.1 V at up to 60 A with minimal voltage droop during burst access.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in single- or dual-phase buck stage.

Use Value: 26 nC Q_rr and 21 ns t_rr reduce body-diode recovery loss during light-load discontinuous conduction mode.

Use Scenario: High-power, low-voltage rail (0.6–0.8 V) for AI inference accelerators with aggressive thermal constraints.

IC Role / Device Role / Timing Role: Primary power switch in high-current, high-frequency (≥1 MHz) multiphase buck converter.

Use Value: 0.6 mm profile allows stacking with adjacent inductors; 12 nC Q_gd limits Miller-induced shoot-through risk during fast switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TRPBF	Same DirectFET™ SQ package; higher R_DS(on) = 2.4 mΩ @ 10 V; Q_g = 27 nC	Slightly lower efficiency at high load; better suited for cost-sensitive mid-tier VRMs	Select when thermal margin exists and gate drive strength is limited.
SiR626DP-T1-GE3	SO-8 package; R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 34 nC; R_θJA = 45 °C/W (no dual cooling)	Higher thermal resistance limits power density; requires larger PCB area and heatsinking	Choose only if DirectFET™ assembly process is unavailable or board rework is required.

Compared with IRF6622TRPBF and SiR626DP-T1-GE3, the IRF6628TRPBF delivers superior power density via its 0.6 mm DirectFET™ SQ footprint and 1.3 °C/W R_θJC, enabling smaller VRM solutions with tighter thermal budgets in high-performance computing platforms.

Availability

IRF6628TRPBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU voltage regulators, server memory regulators, and AI accelerator power stages requiring stable component supply across extended production lifecycles.

Supply support for IRF6628TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The DirectFET™ product line was engineered specifically for high-frequency, high-current DC-DC conversion in computing and communications infrastructure, prioritizing thermal performance, low inductance, and layout compatibility with legacy SO-8 footprints.

FAQ

What is the maximum recommended gate drive voltage for IRF6628TRPBF?

The absolute maximum V_GS is ±20 V, but the device is fully characterized and optimized for 10 V gate drive in synchronous buck applications. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and EMI risk; 4.5–10 V is the validated operating range per datasheet Fig. 9 and Fig. 12.

Can IRF6628TRPBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (16 mV/°C breakdown voltage drift) and matched threshold voltage distribution enable stable current sharing. Layout must ensure symmetrical gate drive paths, Kelvin source connections, and identical thermal mounting to avoid thermal runaway; application note AN-1035 specifies PCB copper balancing guidelines.

Does IRF6628TRPBF require a gate resistor for stability?

A gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 1.2 Ω intrinsic gate resistance and 3770 pF C_iss. Values below 1 Ω increase risk of oscillation; above 10 Ω degrades switching speed and increases switching loss - verified in Fig. 17 waveforms and AN-1035 layout guidance.

Is IRF6628TRPBF RoHS-compliant and lead-free?

Yes - IRF6628TRPBF is RoHS-compliant and qualified for lead-free reflow up to 260°C peak temperature, as stated in the Absolute Maximum Ratings table and confirmed in the "RoHS Compliant Lead-Free" header on page 1 of the official datasheet (Rev. 07/11/06).

IRF6628TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 27A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 96W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6628TRPBF FAQ

1.How can I place an order for IRF6628TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6628TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6628TRPBF reliable?

The price and inventory of IRF6628TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6628TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6628TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6628TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6628TRPBF?

IRF6628TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6628TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6628TRPBF?

For technical support, including IRF6628TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6628TRPBF requirements.

6.How does Aetrix verify that IRF6628TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6628TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6628TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6628TRPBF?

All IRF6628TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6628TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6628TRPBF part is unused and in its original packaging.

Return procedure for IRF6628TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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