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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6629TR1PBF

Name: IRF6629TR1PBF
Brand: Infineon Technologies
SKU: IRF6629TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6629TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6629TR1PBF.pdf

Description:: MOSFET N-CH 25V 29A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6629TR1PBF from Infineon Technologies is a 25 V, 29 A N-channel DirectFET™ Power MOSFET optimized for synchronous buck converters in CPU core DC-DC applications. It delivers 1.6 mΩ R_DS(on) at V_GS = 10 V, 34 nC total gate charge, and 80% improved thermal resistance via dual-sided cooling - enabling high-efficiency, high-frequency power delivery to modern processors.

For engineers reviewing the IRF6629TR1PBF datasheet, IRF6629TR1PBF pinout, IRF6629TR1PBF application, or IRF6629TR1PBF equivalent, key selection criteria include low-profile (0.6 mm) package compatibility with SO-8 layouts, C_dv/dt-induced turn-on immunity, and validated performance under 4.5 V gate drive in high-density VRMs.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-clip DirectFET™ package with top-side drain and bottom-side source terminals, enabling dual-sided thermal interface. Its gate threshold voltage (1.8 V typ.) and low Q_gd/Q_gs2 ratio (11 nC / 4.2 nC) suppress false turn-on during fast dV/dt transients in high-side switching.

The device is characterized for clamped inductive switching at V_DD = 13 V, I_D = 23 A, and di/dt = 220 A/μs, with 27 nC reverse recovery charge and 22 ns trr - confirming suitability for hard-switched synchronous rectification where body diode conduction is minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V max - supports 12 V input rails with margin for transient overshoot in point-of-load converters
R_DS(on)	1.6 mΩ @ V_GS = 10 V - reduces conduction loss to <1 W at 29 A, critical for >90% efficiency targets
Q_g	34 nC - enables fast switching with moderate gate driver strength (e.g., 2 A peak)
C_iss	4260 pF - low input capacitance minimizes Miller effect and improves gate drive efficiency
Thermal R_θJC	1.2 °C/W - enables direct heatsink mounting on both top (drain) and bottom (source) surfaces
V_GS(th)	1.8 V typ. - ensures reliable turn-on with 3.3 V or 4.5 V logic-level gate drivers
Q_rr	27 nC - limits energy dissipation during body diode commutation in synchronous FET mode

Pinout & Package

IRF6629TR1PBF uses the DirectFET™ MZ package (0.6 mm height, SO-8 footprint), with top-side drain and bottom-side source terminals. The package exposes copper pads for dual-sided thermal interface and eliminates bond wires to reduce parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current path; thermally coupled to heatsink or PCB copper pour
Bottom Source Pad	Source (S)	Low-inductance return path; soldered directly to ground plane or source trace
Side Gate Terminal	Gate (G)	Control terminal with 1.3 Ω internal gate resistance; routed away from power loops

Key Features

Feature	Design Value
Dual-sided cooling	Reduces R_θJA by 80% vs. SO-8 MOSFETs, enabling 2× power density without forced air
Ultra-low package inductance	Eliminates bond wires; cuts switching loop inductance to <0.5 nH for clean 100+ kHz operation
C_dv/dt immunity	Validated against 220 A/μs di/dt - prevents spurious turn-on in high-side synchronous FET position
Low R_DS(on) at 4.5 V	2.1 mΩ @ V_GS = 4.5 V - supports efficient operation with standard PWM controller gate drive

Applications

CPU Core VRM

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to Intel/AMD CPUs at up to 200 A per rail.

IC Role / Device Role / Timing Role: Synchronous high-side FET handling 29 A continuous current with <100 ns switching transitions.

Use Value: 1.6 mΩ R_DS(on) and 34 nC Q_g enable >93% efficiency at 1 MHz switching frequency.

Use Scenario: Compact, low-profile power stage for discrete GPU VRMs requiring minimal board space and thermal headroom.

IC Role / Device Role / Timing Role: Low-inductance, dual-cooled switch operating in hard-switched synchronous rectification mode.

Use Value: 0.6 mm profile and top/bottom thermal interface allow integration into 8-layer mobile GPU PCBs with no heatsink.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: DDR5 memory subsystem regulator delivering 1.1 V at 60 A with strict transient response requirements.

IC Role / Device Role / Timing Role: Low-Q_rr (27 nC) FET minimizing body diode losses during light-load discontinuous conduction mode.

Use Value: 22 ns trr and 1.8 V V_GS(th) ensure stable zero-voltage switching behavior across temperature and load.

Use Scenario: High-density power delivery network for PCIe-based AI accelerators with burst current demands exceeding 150 A.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switch operating in parallel configurations with precise current sharing.

Use Value: Matched R_DS(on) tolerance (±25%) and low thermal resistance support parallel operation without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TR1PBF	2.2 mΩ R_DS(on) @ 10 V; 28 nC Q_g; same DirectFET™ MZ package	Higher conduction loss but lower switching loss - better for medium-frequency (300–500 kHz) designs	Select when optimizing for gate drive power over full-load efficiency
SiR872DP-T1-GE3	1.8 mΩ R_DS(on) @ 10 V; 39 nC Q_g; PowerPAK® SO-8 package	No top-side thermal interface - requires single-sided cooling and larger PCB copper area	Select when legacy SO-8 layout reuse is mandatory and thermal budget allows 20% higher R_θJA

Compared with IRF6629TR1PBF, the IRF6622TR1PBF trades 38% higher R_DS(on) for 18% lower Q_g, while the SiR872DP-T1-GE3 offers similar R_DS(on) but lacks dual-sided cooling - making IRF6629TR1PBF optimal for space-constrained, high-efficiency CPU VRMs.

Availability

IRF6629TR1PBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power delivery, server memory regulators, and AI accelerator power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6629TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The DirectFET™ product line was developed to replace traditional TO-220 and SO-8 MOSFETs in high-frequency, high-density power conversion - prioritizing ultra-low inductance, dual thermal paths, and logic-level gate drive compatibility.

FAQ

What is the maximum continuous drain current for IRF6629TR1PBF at 70°C ambient?

The IRF6629TR1PBF supports 18 A continuous drain current at T_A = 70°C with proper PCB copper area and airflow. This rating assumes surface mounting on a 1 in² copper board with double-sided cooling per application note AN-1035. Derating follows a linear factor of 0.022 W/°C above 70°C ambient.

Does IRF6629TR1PBF require a gate resistor for stability in synchronous buck applications?

Yes - a 2.2 Ω to 10 Ω gate resistor is recommended to dampen ringing caused by the MOSFET's low package inductance and PCB layout parasitics. The device's internal gate resistance is 1.3 Ω, so external resistance controls dv/dt and EMI without compromising switching speed below 1 MHz.

Can IRF6629TR1PBF be used in a high-side configuration with 12 V input?

Yes - its 25 V V_DS rating provides 3 V margin above 12 V nominal input, and its 220 A/μs C_dv/dt immunity prevents false turn-on during fast high-side node transitions. Verified operation includes V_DS = 13 V, I_D = 23 A, di/dt = 220 A/μs per Fig. 18 test conditions.

Is IRF6629TR1PBF RoHS-compliant and lead-free?

Yes - IRF6629TR1PBF is RoHS-compliant and lead-free, qualified for reflow soldering up to 260°C peak temperature. The DirectFET™ MZ package uses matte tin plating on copper terminals and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) requirements.

IRF6629TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4260 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 100W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6629TR1PBF FAQ

1.How can I place an order for IRF6629TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6629TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6629TR1PBF reliable?

The price and inventory of IRF6629TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6629TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6629TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6629TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6629TR1PBF?

IRF6629TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6629TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6629TR1PBF?

For technical support, including IRF6629TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6629TR1PBF requirements.

6.How does Aetrix verify that IRF6629TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6629TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6629TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6629TR1PBF?

All IRF6629TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6629TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6629TR1PBF part is unused and in its original packaging.

Return procedure for IRF6629TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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