Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6629TRPBF

Name: IRF6629TRPBF
Brand: Infineon Technologies
SKU: IRF6629TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF6629TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6629TRPBF.pdf

Description:: MOSFET N-CH 25V 29A DIRECTFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,854

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF6629TRPBF from Infineon Technologies is a 25 V, 29 A N-channel DirectFET™ Power MOSFET optimized for synchronous buck converters in CPU core DC-DC applications. It delivers 1.6 mΩ R_DS(on) at V_GS = 10 V, 34 nC total gate charge, and 80% improved thermal resistance via dual-sided cooling. Its ultra-low profile (0.6 mm) and SO-8 footprint compatibility enable high-density, high-efficiency power delivery to modern processors.

For engineers reviewing the IRF6629TRPBF datasheet, IRF6629TRPBF pinout, IRF6629TRPBF application, or IRF6629TRPBF equivalent, key selection criteria include C_dv/dt immunity (220 A/μs), body diode reverse recovery (27 nC Q_rr), low-inductance packaging, and junction-to-case thermal resistance of 1.2 °C/W - all critical for high-frequency, high-current point-of-load designs.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-clad DirectFET™ package with top-side drain and bottom-side source terminals, enabling simultaneous PCB and heatsink cooling. Its gate threshold voltage (1.8 V typ.) and steep transconductance (150 S) support robust 4.5 V logic-level drive in synchronous rectification.

The device is characterized for clamped inductive switching at V_DD = 13 V, I_D = 23 A, and dI/dt = 220 A/μs, with guaranteed C_dv/dt-induced turn-on immunity and 1170 mJ single-pulse avalanche energy - confirming ruggedness in hard-switched DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V maximum - supports 12 V input rails with margin for transient overshoot in CPU VRMs
R_DS(on) @ 10 V	1.6 mΩ - reduces conduction loss to <0.5 W at 29 A, enabling >95% efficiency in 1–2 MHz buck stages
Q_g total	34 nC - enables fast switching with moderate gate drive strength (e.g., 2 A peak driver)
C_iss	4260 pF - low input capacitance minimizes Miller-induced delay and improves gate control stability
Q_rr	27 nC - low reverse recovery charge suppresses shoot-through risk and EMI in synchronous FET operation
R_thJC	1.2 °C/W - allows direct thermal path from die to heatsink or copper plane, critical for dual-sided cooling
V_GS(th)	1.8 V typical - ensures reliable turn-on with 3.3 V or 5 V gate drivers without overdrive

Pinout & Package

IRF6629TRPBF uses the DirectFET™ M package (outline code "MX"), a surface-mount, leadless copper-can package with 0.6 mm height, SO-8 footprint compatibility, and exposed top-side drain for thermal interface. The package enables dual-sided cooling and eliminates bond wires to reduce parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current output terminal; thermally coupled to heatsink or thermal pad on PCB top layer
Bottom Source Pads	Source (S)	Low-impedance return path; soldered to large copper pour for current conduction and bottom-side cooling
Side Gate Pad	Gate (G)	Control input with low gate resistance (1.3–3.2 Ω); isolated from drain by optimized field plate structure

Key Features

Feature	Design Value
DirectFET™ packaging	Enables dual-sided cooling and reduces package inductance to <1 nH - critical for minimizing switching voltage spikes
High C_dv/dt immunity	Rated for 220 A/μs dV/dt - prevents false turn-on during high-slew-rate transitions in synchronous buck high-side operation
Low-profile construction	0.6 mm height - fits under low-clearance shields and enables stacked PCB architectures in space-constrained VRMs
Optimized for synchronous buck	Balance of R_DS(on), Q_g, and Q_gd/Q_gs2 ratio minimizes both conduction and switching losses at 1–3 MHz switching frequencies
RoHS-compliant lead-free	Qualified for 260 °C reflow - compatible with standard SMT assembly processes per AN-1035 guidelines

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to Intel/AMD CPUs at up to 300 A per rail.

IC Role / Device Role: Synchronous high-side FET in each phase leg, switching at 1–2 MHz with 3.3 V gate drive.

Use Value: 1.6 mΩ R_DS(on) and 34 nC Q_g reduce combined conduction + switching loss to <1.2 W per phase at 25 A, enabling compact thermal design.

Use Scenario: Point-of-load regulator for discrete GPUs requiring rapid load transient response and tight voltage regulation.

IC Role / Device Role: Low-side synchronous FET handling continuous 25 A with body-diode commutation during dead-time.

Use Value: 27 nC Q_rr and 1.0 V V_SD minimize reverse recovery loss and forward drop, improving efficiency by ~1.5% vs. legacy SO-8 MOSFETs.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: DDR5 memory subsystem VRM delivering 1.1 V at up to 120 A with <10 μs transient response.

IC Role / Device Role: High-side FET operating in forced PWM mode with precise gate timing control.

Use Value: 1.2 °C/W R_thJC and dual-sided cooling allow stable operation at 100% duty cycle under full load without thermal throttling.

Use Scenario: Multi-phase power stage for 75 W+ AI inference accelerators with dynamic workload scaling.

IC Role / Device Role: Synchronous FET in interleaved buck topology, driven by digital PWM controller with adaptive dead-time.

Use Value: 220 A/μs C_dv/dt immunity prevents spurious turn-on during aggressive phase shedding, ensuring system reliability under burst loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	Higher R_DS(on) (2.3 mΩ @ 10 V), same Q_g (34 nC), identical package	Suitable where thermal margin exists but cost reduction is prioritized	Select when lower BOM cost outweighs 15% higher conduction loss at full load
SiR626DP-T1-GE3	25 V rating, 1.8 mΩ R_DS(on), 32 nC Q_g, PowerPAK® 1212-8 package (1.0 mm height)	Compatible with same layout but lacks dual-sided cooling capability	Choose when board-level thermal management relies solely on bottom-side copper, not top-side heatsinking

Compared with IRF6629TRPBF, IRF6642TRPBF trades higher on-resistance for cost, while SiR626DP-T1-GE3 offers similar electrical specs but sacrifices the 0.6 mm profile and top-side thermal interface essential for ultra-thin VRMs.

Availability

IRF6629TRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator power stages requiring stable component supply, high-reliability qualification, and long-term production continuity.

Supply support for IRF6629TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

The DirectFET™ product line was developed specifically for high-frequency, high-current DC-DC conversion in computing and communications infrastructure, emphasizing thermal performance, switching speed, and layout compatibility with legacy SO-8 footprints.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6629TRPBF supports 180 A continuous drain current at T_A = 70°C when mounted on a 1 in² copper board with dual-sided cooling per the datasheet test condition. This rating assumes proper PCB copper area, thermal vias, and airflow - actual system-level current depends on layout and heatsinking.

Does IRF6629TRPBF require a negative gate voltage for safe turn-off in high-dV/dt environments?

No. The device has inherent C_dv/dt immunity rated to 220 A/μs and does not require negative gate bias for reliable turn-off. Its gate threshold voltage (1.35–2.35 V) and low Q_gd/Q_gs2 ratio ensure stable operation with 0 V to 10 V gate drive in synchronous buck configurations.

Can IRF6629TRPBF be used as a low-side switch with 3.3 V microcontroller drive?

Yes. With a typical V_GS(th) of 1.8 V and R_DS(on) of 2.1 mΩ at V_GS = 4.5 V, it fully enhances using standard 3.3 V GPIO. At 23 A, conduction loss remains below 1.1 W - verified in Fig. 9 of the datasheet for V_GS ≥ 4.5 V.

What is the recommended PCB layout for optimal thermal performance?

Use minimum 1 in² copper area on both top and bottom layers, connect top drain pad directly to a heatsink or thermal plane, place ≥8 thermal vias (0.3 mm diameter) under the bottom source pads, and follow AN-1035 for solder paste stencil design and reflow profile - especially critical for void-free copper-can attachment.

IRF6629TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.1mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4260 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 100W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6629TRPBF FAQ

1.How can I place an order for IRF6629TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6629TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6629TRPBF reliable?

The price and inventory of IRF6629TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6629TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6629TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6629TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6629TRPBF?

IRF6629TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6629TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6629TRPBF?

For technical support, including IRF6629TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6629TRPBF requirements.

6.How does Aetrix verify that IRF6629TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6629TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6629TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6629TRPBF?

All IRF6629TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6629TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6629TRPBF part is unused and in its original packaging.

Return procedure for IRF6629TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…