My Inquiry
My Account
Infineon Technologies IRF6631TRPBF
- Part No.:
- IRF6631TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric SQ
- Datasheet:
-
IRF6631TRPBF.pdf
- Description:
- MOSFET N-CH 30V 13A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,213
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF6631TRPBF from Infineon Technologies is a 30V, 13A N-channel Power MOSFET in DirectFET® SQ package, featuring 6.0 mΩ RDS(on) @ 10V and 8.3 mΩ @ 4.5V, 12 nC total gate charge, and dual-sided cooling capability. It is optimized for synchronous buck converter CtrlFET sockets in CPU core DC-DC converters requiring high-frequency switching and low conduction loss.
For engineers reviewing the IRF6631TRPBF datasheet, IRF6631TRPBF pinout, IRF6631TRPBF application, or IRF6631TRPBF equivalent, key selection criteria include low-profile thermal performance (RθJC = 3.0°C/W), ultra-low package inductance, body diode recovery (Qrr = 10 nC), and RoHS-compliant lead-free reflow qualification up to 260°C.
Technical Context
This MOSFET employs HEXFET® silicon with DirectFET® SQ packaging-enabling top-side drain connection and bottom-side source/gate terminals for dual-sided PCB cooling. Its gate threshold voltage (1.8 V typ.) and low Qgd/Qgs2 ratio (4.4 nC / 1.1 nC) support fast, low-loss switching in 500 kHz+ synchronous buck stages.
The device exhibits strong temperature stability: RDS(on) increases only ~1.5× from 25°C to 125°C at 10V drive, and VGS(th) has a -5.2 mV/°C coefficient. Its SOA is limited by RDS(on) at low VDS, supporting 10A continuous operation at TC = 25°C with 42 W power dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V max - supports 12V input rails with margin for transient spikes in point-of-load converters. |
| RDS(on) | 6.0 mΩ @ 10V - enables <15 mW conduction loss at 13A, critical for >90% efficiency at high load currents. |
| Qg | 12 nC - minimizes gate drive power and switching transition time in high-frequency operation. |
| Qrr | 10 nC - reduces body diode recovery loss and EMI in hard-switched synchronous rectification. |
| RθJC | 3.0 °C/W - allows direct heatsink attachment to top-side drain, improving thermal resistance by 80% vs. SO-8. |
| VGS(th) | 1.8 V typ. - ensures reliable turn-on with 3.3V or 4.5V logic-level gate drivers. |
| ID (TC=25°C) | 13 A - rated for sustained current in compact CPU VRM phases without derating. |
Pinout & Package
IRF6631TRPBF uses the DirectFET® SQ (Small Size Can, Q-designation) package: 4.8 mm × 3.8 mm × 0.7 mm, metal-can construction with top-side Drain and bottom-side Source/Gate terminals. The package enables dual-sided cooling and is compatible with standard Micro-8 footprint layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary heat path; electrically connected to drain terminal and serves as thermal interface for heatsink mounting. |
| Bottom Left Pad | Source (S) | Low-inductance return path for high di/dt currents; soldered directly to PCB ground plane. |
| Bottom Right Pad | Gate (G) | Control terminal with low parasitic inductance; isolated from drain/source by dielectric substrate. |
Key Features
| Feature | Design Value |
|---|---|
| DirectFET® SQ packaging | 0.7 mm profile with top-side drain enables dual-sided cooling and reduces thermal resistance by 80% vs. SO-8. |
| Ultra-low Qgd/Qg ratio | 4.4 nC / 12 nC = 37% - improves switching speed and reduces Miller-induced shoot-through risk. |
| Optimized for CtrlFET socket | Low RDS(on) and gate charge balance conduction loss and switching loss in high-side position of synchronous buck. |
| Body diode with fast recovery | trr = 11 ns, Qrr = 10 nC - lowers reverse recovery loss and EMI during dead-time conduction. |
| RoHS-compliant reflow | Qualified for 260°C peak reflow - ensures compatibility with standard lead-free SMT assembly processes. |
Applications
| CPU Core VRM Phase | GPU Voltage Regulator |
|---|---|
|
Use Scenario: High-current, high-frequency DC-DC conversion for Intel/AMD microprocessors requiring dynamic load steps up to 300A/µs. IC Role / Device Role / Timing Role: CtrlFET (high-side switch) in synchronous buck topology operating at 300–1000 kHz. Use Value: 6.0 mΩ RDS(on) and 12 nC Qg jointly reduce total power loss below 1.2 W at 13A/500 kHz, enabling compact 4-phase designs. |
Use Scenario: Multi-phase VRM supplying NVIDIA/AMD GPUs with tight voltage regulation (<±10 mV) under transient loads. IC Role / Device Role / Timing Role: High-side power switch in interleaved buck converter with phase-shifted PWM control. Use Value: Dual-sided cooling maintains TJ < 105°C at 10A continuous, avoiding thermal throttling during sustained compute workloads. |
| Server Memory Regulator | AI Accelerator Power Stage |
|
Use Scenario: Point-of-load regulator for DDR5 memory modules requiring fast transient response and low output ripple. IC Role / Device Role / Timing Role: Low-RDS(on) switch in 2-phase buck delivering 40A at 1.1V with <500 ns load-step response. Use Value: 8.3 mΩ RDS(on) @ 4.5V enables full-load operation with 3.3V gate drive, simplifying driver IC selection. |
Use Scenario: Power delivery to FPGA-based AI inference accelerators with burst-mode current demands exceeding 200A. IC Role / Device Role / Timing Role: High-efficiency CtrlFET in multiphase buck converter operating at 1 MHz with adaptive frequency scaling. Use Value: 1.1 nC Qgs2 and 4.4 nC Qgd minimize switching transition overlap, reducing cross-conduction loss by >25% vs. SO-8 alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6622TRPBF | Higher RDS(on) (7.0 mΩ @ 10V), same Qg (12 nC), identical SQ package | Suitable for lower-current VRMs where thermal margin permits higher conduction loss | Select when cost sensitivity outweighs 17% higher I²R loss at full load. |
| SiR626DP-T1-GE3 | Lower RDS(on) (4.5 mΩ @ 10V), higher Qg (17 nC), PowerPAK® 1212-8 package | Better conduction loss but higher switching loss; requires different PCB layout and thermal interface | Prefer for fixed-frequency designs >300 kHz where conduction dominates, not for space-constrained CtrlFET sockets. |
Compared with IRF6631TRPBF, IRF6622TRPBF trades 1.0 mΩ higher on-resistance for identical gate drive and footprint, while SiR626DP offers superior RDS(on) at the cost of 42% higher Qg and non-drop-in packaging-making IRF6631TRPBF optimal for thermally constrained, high-frequency CtrlFET roles.
Availability
IRF6631TRPBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU voltage regulators, server memory regulators, and AI accelerator power stages requiring stable component supply and qualified lead-free manufacturing.
Supply support for IRF6631TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949.
The IRF6631TRPBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and datacenter power supplies.
FAQ
What is the maximum junction temperature rating for IRF6631TRPBF?
The IRF6631TRPBF has a maximum operating junction temperature of +150°C and a storage temperature range of -40°C to +150°C. Its thermal design supports continuous operation at TJ = 125°C with appropriate PCB copper area and optional top-side heatsinking, validated per JEDEC JESD51-2 and JESD51-14 standards.
Is IRF6631TRPBF suitable for 3.3V gate drive applications?
Yes-its gate threshold voltage is 1.8 V (typ.), with guaranteed turn-on down to 2.5 V, making it fully compatible with 3.3V logic-level gate drivers. At VGS = 4.5V, RDS(on) is 8.3 mΩ, enabling robust conduction even with marginal gate drive margins.
How does the DirectFET® SQ package improve thermal performance over SO-8?
The DirectFET® SQ package reduces RθJC to 3.0°C/W (vs. ~6.5°C/W for SO-8) by using a top-side metal drain pad for direct heatsink contact and eliminating plastic mold compound. This achieves an 80% improvement in thermal resistance, verified via transient dual-interface testing per JESD51-14.
Does IRF6631TRPBF have avalanche energy rating?
Yes-the device is rated for 60 mJ single-pulse avalanche energy (EAS) at IAS = 10A, with repetitive avalanche capability confirmed per JEDEC JESD24-1. This supports robustness against inductive switching transients in unclamped inductive load conditions.
IRF6631TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric SQ
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta), 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1450 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SQ
IRF6631TRPBF FAQ
1.How can I place an order for IRF6631TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6631TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6631TRPBF reliable?
The price and inventory of IRF6631TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6631TRPBF is usually 5 days.
3.What payment methods are accepted for IRF6631TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6631TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6631TRPBF?
IRF6631TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6631TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6631TRPBF?
For technical support, including IRF6631TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6631TRPBF requirements.
6.How does Aetrix verify that IRF6631TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF6631TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6631TRPBF meets industry standards.
7.What is the process for return or replacement of IRF6631TRPBF?
All IRF6631TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6631TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6631TRPBF part is unused and in its original packaging.
Return procedure for IRF6631TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF6631TRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
