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Infineon Technologies IRF6633ATR1PBF
- Part No.:
- IRF6633ATR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MU
- Datasheet:
-
IRF6633ATR1PBF.pdf
- Description:
- MOSFET N-CH 20V 16A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,388
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Product details
Overview
IRF6633ATR1PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® MU package, optimized for synchronous buck converters operating from 12 V input bus. It delivers 4.1 mΩ RDS(on) @ 10 V, 7.0 mΩ @ 4.5 V, 11 nC total gate charge, and ultra-low package inductance to minimize conduction and switching losses in high-frequency CPU core power delivery.
For engineers reviewing the IRF6633ATR1PBF datasheet, IRF6633ATR1PBF pinout, IRF6633ATR1PBF application, or IRF6633ATR1PBF equivalent, key selection criteria include low-profile thermal performance (0.7 mm height), dual-sided cooling capability, body diode recovery time (20–30 ns), and compatibility with standard SMT reflow profiles up to 260 °C.
Technical Context
This MOSFET employs HEXFET® silicon on a copper substrate DirectFET® MU package, enabling direct top-side (drain) and bottom-side (source) thermal paths. Its gate threshold voltage of 1.8 V (typ.) and low Qgd/Qgs2 ratio support fast, low-loss switching in hard-switched DC-DC topologies.
The device is characterized for operation at junction temperatures up to 150 °C, with RDS(on) exhibiting +0.3%/°C temperature coefficient and VGS(th) decreasing −5 mV/°C. Avalanche energy rating is 240 mJ (single-pulse, IAS = 13 A), validated per JEDEC JESD24-11.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage for 12 V bus applications with margin against transients |
| RDS(on) @ 10 V | 4.1 mΩ - Enables <1 W conduction loss at 16 A continuous drain current |
| RDS(on) @ 4.5 V | 7.0 mΩ - Supports efficient operation with 5 V gate drive in low-voltage control stages |
| Qg (total) | 11 nC - Reduces gate driver power demand and enables >1 MHz switching in VRMs |
| Qgd | 3.9 nC - Limits Miller-induced shoot-through risk during high di/dt transitions |
| tr/tf | 13 ns / 7.7 ns - Supports clean edge fidelity in high-speed synchronous rectification |
| RθJC | 3.0 °C/W - Enables high-power density layout with case-mounted heatsinking |
Pinout & Package
IRF6633ATR1PBF uses the DirectFET® MU outline: a copper-can, double-sided cooling package with exposed drain (top), source (bottom), and gate (side-terminal). Dimensions: 6.35 × 5.05 × 0.70 mm (L × W × H). No plastic leadframe; terminals are solderable copper pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top metal surface | Drain (D) | Primary heat path to heatsink or thermal pad; electrically connected to drain terminal |
| Bottom metal surface | Source (S) | Low-inductance return path; forms primary PCB-side thermal interface |
| Side pad (marked "G") | Gate (G) | Control terminal with 1.5 Ω internal gate resistance; isolated from drain/source planes |
Key Features
| Feature | Design Value |
|---|---|
| DirectFET® MU packaging | 0.7 mm profile enables ultra-thin VRM designs while supporting dual-sided cooling |
| Ultra-low Qgd/Qg ratio | 35% - Improves switching controllability under high dv/dt conditions in multiphase converters |
| Body diode trr | 20–30 ns - Minimizes reverse recovery loss during synchronous FET commutation |
| RoHS-compliant lead-free finish | Qualified for 260 °C reflow - Compatible with standard Pb-free SMT assembly without process deviation |
| Thermal resistance RθJ-PCB | 1.0 °C/W - Achieved via full-copper substrate and direct PCB copper contact |
Applications
| Server CPU Core VRM | GPU Power Delivery |
|---|---|
|
Use Scenario: Multiphase buck converter supplying 0.8–1.2 V @ >100 A to modern x86 server CPUs. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with tight dead-time control. Use Value: 4.1 mΩ RDS(on) and 11 nC Qg reduce combined conduction + switching loss by ≥18% vs. SO-8 equivalents at 16 A load. |
Use Scenario: Compact, high-current power stage for discrete GPU VRMs in AI accelerators and gaming graphics cards. IC Role / Device Role / Timing Role: Low-side FET in interleaved 3+ phase topology with forced-air cooling. Use Value: Dual-sided cooling allows 30% higher power density than TO-252 while maintaining TJ < 115 °C at 85 A peak. |
| Telecom Baseband Power | Industrial FPGA Core Supply |
|
Use Scenario: 12 V input, 1.0 V output VRM for 5G baseband processing units requiring high reliability and low EMI. IC Role / Device Role / Timing Role: Primary switching element in digitally controlled, adaptive-phase buck regulator. Use Value: 250 pF Crss and 3.9 nC Qgd suppress dv/dt-induced false turn-on, reducing gate driver stress and system noise. |
Use Scenario: Field-programmable gate array (FPGA) core supply in industrial PLCs and motor drives where thermal cycling endurance is critical. IC Role / Device Role / Timing Role: High-efficiency, thermally robust power switch rated for continuous 150 °C junction operation. Use Value: RDS(on) drift of only +0.3%/°C ensures stable regulation across −40 °C to +125 °C ambient range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6623TRPBF | Higher RDS(on) (5.2 mΩ @ 10 V), same Qg (11 nC), identical DirectFET® MU package | Suitable for cost-sensitive 48 A max applications where 15% higher conduction loss is acceptable | Select when thermal margin exists and BOM cost reduction is prioritized over peak efficiency |
| SiR626DP-T1-GE3 | Lower RDS(on) (3.3 mΩ @ 10 V), higher Qg (15.5 nC), PowerPAK® 1212-8 package (0.9 mm height) | Better conduction loss but slower switching; requires larger PCB footprint and single-sided cooling | Prefer for fixed-frequency ≤300 kHz designs where conduction dominates loss budget |
Compared with IRF6623TRPBF and SiR626DP-T1-GE3, the IRF6633ATR1PBF uniquely balances ultra-low RDS(on), minimal Qg, and sub-0.7 mm height-making it optimal for space-constrained, high-frequency (>500 kHz), thermally aggressive CPU/GPU VRMs where both switching and conduction losses must be minimized simultaneously.
Availability
IRF6633ATR1PBF is available at Aetrix Electronics and suitable for server CPU core VRMs, GPU power delivery modules, and telecom baseband power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for IRF6633ATR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.
The IRF6633ATR1PBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where thermal performance and switching speed are critical.
FAQ
What is the maximum recommended gate drive voltage for IRF6633ATR1PBF?
The absolute maximum VGS rating is ±20 V, but the device is fully characterized and optimized for 4.5 V to 10 V gate drive. Operation above 12 V provides diminishing RDS(on) improvement while increasing gate oxide stress and driver power dissipation. For most synchronous buck applications, 5 V or 10 V logic-level drive is recommended.
Can IRF6633ATR1PBF be used in parallel configurations?
Yes-the device exhibits positive RDS(on) temperature coefficient (+0.3%/°C), enabling inherent current sharing in paralleled operation. Layout symmetry, matched gate drive impedance (<2 Ω), and shared thermal mass are required. Derate total current by 15% versus sum of individual ratings to ensure safe thermal margin.
Does IRF6633ATR1PBF require special PCB layout considerations?
Yes-its DirectFET® MU package demands symmetric copper pour on top (drain) and bottom (source) layers, minimum 1 oz copper, and thermal vias under the source pad (≥12×0.3 mm diameter). AN-1035 specifies stencil aperture (0.15 mm thickness, 100% area ratio) and substrate clearance rules to prevent solder bridging and ensure mechanical reliability.
Is avalanche ruggedness specified for IRF6633ATR1PBF?
Yes-EAS is rated at 240 mJ (single-pulse, IAS = 13 A, TJ = 25 °C), measured per JEDEC JESD24-11. This supports unclamped inductive switching in non-synchronous or fault-recovery scenarios. Repeated avalanche operation is not recommended; design should avoid entering avalanche region during normal operation.
IRF6633ATR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MU
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1410 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MU
IRF6633ATR1PBF FAQ
1.How can I place an order for IRF6633ATR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6633ATR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6633ATR1PBF reliable?
The price and inventory of IRF6633ATR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6633ATR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6633ATR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6633ATR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6633ATR1PBF?
IRF6633ATR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6633ATR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6633ATR1PBF?
For technical support, including IRF6633ATR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6633ATR1PBF requirements.
6.How does Aetrix verify that IRF6633ATR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6633ATR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6633ATR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6633ATR1PBF?
All IRF6633ATR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6633ATR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6633ATR1PBF part is unused and in its original packaging.
Return procedure for IRF6633ATR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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