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Infineon Technologies IRF6633ATRPBF
- Part No.:
- IRF6633ATRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MU
- Datasheet:
-
IRF6633ATRPBF.pdf
- Description:
- MOSFET N-CH 20V 16A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,571
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Product details
Overview
IRF6633ATRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® MU package, optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers 4.1 mΩ RDS(on) @ 10 V VGS, 11 nC total gate charge, and ultra-low 0.7 mm profile with dual-sided cooling capability - enabling high-efficiency DC-DC conversion for modern processors operating from 12 V bus.
For engineers reviewing the IRF6633ATRPBF datasheet, IRF6633ATRPBF pinout, IRF6633ATRPBF application, or IRF6633ATRPBF equivalent, key selection criteria include its low RDS(on)/Qg balance, 20 V VDSS rating, 16 A continuous drain current at TA = 25°C, and compatibility with standard SMT reflow processes per AN-1035.
Technical Context
This MOSFET employs HEXFET® silicon on a copper substrate DirectFET® MU package, integrating drain-connected top-side metal and source-connected bottom-side metal to enable simultaneous top- and bottom-side thermal interface. Its gate threshold voltage of 1.8 V (typ.) and steep transconductance (31 S) support precise PWM control in high-dV/dt, high-di/dt synchronous rectification stages.
The device exhibits 3.9 nC gate-to-drain charge (Qgd) and 5.6 nC switch charge (Qsw), minimizing Miller-induced switching delay and reducing overlap losses. Output capacitance (Coss = 680 pF @ 10 V) and reverse transfer capacitance (Crss = 250 pF) are tuned for fast turn-off while maintaining EMI robustness in multi-phase VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - supports 12 V input bus with margin for transient overshoot in CPU VRMs |
| RDS(on) @ 10 V | 4.1 mΩ - enables <1 W conduction loss at 16 A, critical for >90% efficiency targets |
| RDS(on) @ 4.5 V | 7.0 mΩ - ensures usable channel enhancement under low-voltage gate drive in multiphase controllers |
| Qg total | 11 nC - reduces gate driver power demand and propagation delay in 500 kHz–1 MHz switching |
| Qgd | 3.9 nC - limits Miller plateau duration, improving controllability during hard-switching transitions |
| Thermal resistance RθJC | 3.0 °C/W - enables direct heatsink mounting to drain pad for sub-60°C junction rise at full load |
| Package height | 0.7 mm - allows stacking with adjacent components and fits low-profile server/graphics card envelopes |
Pinout & Package
The IRF6633ATRPBF uses the DirectFET® MU (Medium Size Can, U-Designation) package - a copper-can, top-drain/bottom-source surface-mount structure with no leads, designed for double-sided PCB thermal management. Dimensions: 6.35 × 5.05 × 0.70 mm (L × W × H), with exposed drain on top and source terminals on bottom perimeter.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top metal surface | Drain (D) | Primary high-current path; thermally coupled to heatsink or copper pour for dual-sided cooling |
| Bottom perimeter pads (outer) | Source (S) | Low-inductance return path; connects directly to ground plane or source node of synchronous FET |
| Bottom center pad | Gate (G) | Control terminal isolated by dielectric layer; requires short, low-impedance trace to minimize ringing |
Key Features
| Feature | Design Value |
|---|---|
| DirectFET® MU packaging | Enables simultaneous top- and bottom-side thermal interface, improving thermal resistance by 80% vs. SO-8 equivalents |
| Ultra-low Qgd/Qg ratio (35%) | Reduces Miller-induced switching delay and improves gate drive timing margin in high-frequency VRMs |
| 1.8 V gate threshold (typ.) | Ensures reliable turn-on with 3.3 V or 5 V gate drivers used in digital multiphase controllers |
| RoHS-compliant lead-free finish | Qualified for 260°C reflow, compatible with IPC-J-STD-020 moisture sensitivity Level 1 handling |
Applications
| CPU Core Voltage Regulator | GPU Power Delivery |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to Intel/AMD CPUs at up to 200 A peak. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 500 kHz–1 MHz with tight dead-time control. Use Value: 4.1 mΩ RDS(on) and 11 nC Qg reduce both conduction and switching losses, enabling >92% efficiency at 150 A. | Use Scenario: Compact, high-density VRM on discrete GPU PCBs where vertical space is constrained to <1.0 mm. IC Role / Device Role / Timing Role: High-side or low-side FET in 3–6 phase topology with forced-air or vapor chamber cooling. Use Value: 0.7 mm profile allows stacking with inductors and capacitors; dual-sided cooling maintains TJ < 105°C under full load. |
| Server Memory Regulator | AI Accelerator Power Stage |
Use Scenario: DDR5 memory VDDQ/VPP regulators requiring fast transient response and low output impedance. IC Role / Device Role / Timing Role: Low-RDS(on) output FET delivering 40–60 A per phase with <100 ns switching. Use Value: 7.0 mΩ RDS(on) @ 4.5 V ensures stable operation with controller gate drive voltages down to 4.5 V. | Use Scenario: Power delivery to FPGA or ASIC tiles in AI training accelerators with dynamic load steps >50 A/μs. IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved buck stage operating at 1 MHz with adaptive dead-time control. Use Value: Low Crss (250 pF) minimizes dv/dt-induced false turn-on, improving reliability during rapid load transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6622TRPBF | Higher RDS(on) (5.2 mΩ @ 10 V), same Qg (11 nC), identical MU package | Suitable for lower-current (<12 A) phases or cost-sensitive designs where 25% higher conduction loss is acceptable | Select when thermal budget allows higher RDS(on) to reduce BOM cost without changing layout |
| SiR626DP-T1-GE3 | Lower RDS(on) (3.5 mΩ @ 10 V), higher Qg (15 nC), PowerPAK® SO-8 package (1.6 mm height) | Requires PCB redesign due to taller profile and different thermal interface; better for single-sided cooling only | Choose only if layout permits taller package and gate driver can support +36% Qg without compromising switching speed |
Compared with IRF6622TRPBF and SiR626DP-T1-GE3, the IRF6633ATRPBF uniquely balances ultra-low RDS(on), minimal Qg, and sub-0.7 mm height - making it optimal for space-constrained, high-efficiency multi-phase CPU/GPU VRMs where dual-sided cooling is implemented.
Availability
IRF6633ATRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator power stages requiring stable component supply across extended production lifecycles.
Supply support for IRF6633ATRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's power MOSFET innovation.
The DirectFET® product line was developed to eliminate leadframe limitations in high-current power switching, targeting next-generation computing and datacenter VRMs where thermal density and switching frequency are primary constraints.
FAQ
What is the maximum continuous drain current for IRF6633ATRPBF at 70°C ambient temperature?
The IRF6633ATRPBF supports 65 A continuous drain current at TA = 70°C with proper PCB copper area and airflow. This rating assumes surface mounting on a 1 in² copper board with double-sided cooling per datasheet test conditions. Derating applies above 70°C ambient, with linear reduction of 1.5 W/°C beyond TA = 70°C.
Can IRF6633ATRPBF be used in avalanche-rated applications?
Yes - the IRF6633ATRPBF is rated for 130 mJ single-pulse avalanche energy (EAS) at IAS = 13 A. It is suitable for unclamped inductive switching in synchronous buck converters where body diode commutation occurs, provided layout minimizes stray inductance and gate drive remains stable during recovery.
Does IRF6633ATRPBF require special soldering profiles due to its DirectFET® package?
No - the IRF6633ATRPBF is qualified for standard lead-free reflow up to 260°C peak temperature. Application Note AN-1035 specifies stencil design, substrate layout, and thermal mass balancing guidelines to ensure void-free solder joints and optimal thermal transfer, but no specialized equipment is required beyond standard SMT lines.
How does the gate threshold voltage shift with temperature?
The gate threshold voltage decreases linearly with junction temperature at –5.0 mV/°C. At TJ = 125°C, VGS(th) drops to approximately 1.25 V (from 1.8 V at 25°C), ensuring consistent turn-on behavior across the full –40°C to +150°C operating range without risk of thermal runaway.
IRF6633ATRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MU
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1410 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MU
IRF6633ATRPBF FAQ
1.How can I place an order for IRF6633ATRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6633ATRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6633ATRPBF reliable?
The price and inventory of IRF6633ATRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6633ATRPBF is usually 5 days.
3.What payment methods are accepted for IRF6633ATRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6633ATRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6633ATRPBF?
IRF6633ATRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6633ATRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6633ATRPBF?
For technical support, including IRF6633ATRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6633ATRPBF requirements.
6.How does Aetrix verify that IRF6633ATRPBF is sourced from the original manufacturer or authorized distributors?
All IRF6633ATRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6633ATRPBF meets industry standards.
7.What is the process for return or replacement of IRF6633ATRPBF?
All IRF6633ATRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6633ATRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6633ATRPBF part is unused and in its original packaging.
Return procedure for IRF6633ATRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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