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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6633TR1PBF

Name: IRF6633TR1PBF
Brand: Infineon Technologies
SKU: IRF6633TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6633TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MP

Datasheet:: IRF6633TR1PBF.pdf

Description:: MOSFET N-CH 20V 16A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6633TR1PBF from Infineon Technologies (formerly International Rectifier) is an n-channel enhancement-mode Power MOSFET in TO-247 package, rated for 100 V V_DS, 58 A I_D (T_C = 25°C), and 11.5 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6633TR1PBF datasheet, IRF6633TR1PBF pinout, IRF6633TR1PBF application, or IRF6633TR1PBF equivalent, key selection criteria include its low gate charge (Q_g = 49 nC), fast switching speed (t_fall = 22 ns), and rugged avalanche rating (E_AS = 220 mJ), critical for hard-switched industrial power stages.

Technical Context

This Generation 4 HEXFET device uses advanced trench-gate silicon process to achieve reduced R_DS(on) × Q_g figure-of-merit. Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, ensuring reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The MOSFET features integrated body diode with soft recovery characteristics (t_rr = 65 ns, Q_rr = 110 nC), minimizing switching losses and voltage overshoot in synchronous rectification and freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for 48 V bus systems with 2× safety margin
R_DS(on) max	11.5 mΩ @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 10 A continuous current
I_D (T_C = 25°C)	58 A - Sustains high-current pulse loads in motor phase-legs without derating
Q_g	49 nC - Reduces gate driver power requirement and enables >200 kHz PWM operation
E_AS	220 mJ - Withstands single-pulse inductive energy during overcurrent fault conditions
t_rr	65 ns - Limits reverse recovery current spike and associated EMI in bridge configurations

Pinout & Package

TO-247AC package: isolated tab (drain-connected), 3-pin through-hole outline with 0.25 mm lead finish, 1.5 mm lead thickness, and 2.54 mm lead pitch. Thermal resistance R_θJC = 0.45 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path input/output	Electrically connected to metal tab; requires insulated mounting in non-isolated topologies
Gate	Control electrode	Accepts 10 V logic-level drive; gate capacitance C_iss = 2200 pF affects Miller effect in high-dV/dt environments
Source	Reference node for gate drive and current sensing	Provides return path for load current and gate loop; low-inductance layout essential for stability

Key Features

Feature	Design Value
Ultra-low Q_g/R_DS(on) ratio	4.27 nC/mΩ - Improves efficiency in high-frequency SMPS by reducing combined switching + conduction loss
100% avalanche-rated	E_AS = 220 mJ - Eliminates need for external snubbers in inductive load switching
Enhanced dv/dt capability	≥50 V/ns - Resists false turn-on in high-noise motor drive and UPS applications
Lead-free and RoHS-compliant	Matte tin-plated leads - Ensures solderability and long-term reliability in automated assembly

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-density 12 V input → 1 V output buck converter for CPU core power delivery.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: Low R_DS(on) minimizes conduction loss under 50+ A load; fast t_fall reduces overlap loss during transition.

Use Scenario: 24–48 V BLDC motor inverter stage driving 500 W fans or pumps.

IC Role / Device Role / Timing Role: Phase-leg high-side switch in 3-phase inverter with 60° commutation timing.

Use Value: Rugged body diode enables clean freewheeling without external Schottky; low Q_g supports 20 kHz PWM without gate driver overheating.

Telecom DC-DC

UPS Inverter Stage

Use Scenario: 48 V telecom rectifier output stage stepping down to 5.1 V/12 V for board-level distribution.

IC Role / Device Role / Timing Role: Primary-side FET in isolated forward or active-clamp forward topology.

Use Value: 100 V rating accommodates 48 V nominal bus with 30% transient margin; low C_oss improves ZVS initiation.

Use Scenario: 200–300 V DC link in online double-conversion UPS feeding 230 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge inverter leg, synchronized to SPWM carrier.

Use Value: Avalanche rating ensures survivability during short-circuit events; soft-recovery diode reduces shoot-through risk during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 9.5 mΩ (lower), Q_g = 62 nC (higher), TO-220FP package	Higher thermal resistance (R_θJC = 1.0 °C/W) limits peak current in compact heatsinks	Preferred where conduction loss dominates and board space allows larger footprint
IXFH50N10X3	R_DS(on) = 12.5 mΩ (slightly higher), Q_g = 42 nC (lower), TO-247 package	Lower gate charge enables faster switching but requires tighter gate drive layout due to lower V_GS(th) (1.8 V)	Better for ultra-high-frequency (>500 kHz) designs where gate drive loss is critical

Compared with STP110N10F7 and IXFH50N10X3, the IRF6633TR1PBF offers optimal balance of R_DS(on), Q_g, and ruggedness for 100 V industrial power stages requiring both efficiency and fault tolerance without compromising layout simplicity.

Availability

IRF6633TR1PBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC converters, and UPS inverter stages requiring stable component supply across multi-year production cycles.

Supply support for IRF6633TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

The IRF6633TR1PBF belongs to Infineon's Generation 4 HEXFET family, engineered specifically for high-efficiency, high-reliability power conversion in industrial motor control and server power supplies.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF6633TR1PBF has a rated maximum junction temperature of 175°C. Derating is required above T_C = 25°C per the thermal resistance curve; at T_C = 100°C, continuous I_D must be limited to 32 A to maintain T_J ≤ 175°C. This rating supports operation in sealed enclosures with forced-air cooling.

Does this MOSFET require a negative gate turn-off voltage?

No. The IRF6633TR1PBF operates reliably with 0 V to 10 V gate drive and does not require negative turn-off bias. Its V_GS(th) minimum of 2.0 V ensures robust noise immunity, and the device fully turns off at V_GS = 0 V with no leakage concerns up to 100 V V_DS.

Can it replace IRF6622 in existing designs?

Yes, with validation. Both share TO-247 package and 100 V rating, but IRF6633TR1PBF has lower R_DS(on) (11.5 mΩ vs. 14.5 mΩ) and higher Q_g (49 nC vs. 42 nC). Layout changes may be needed to manage increased gate drive current; thermal performance improves by ~12% at 40 A.

Is the drain tab electrically isolated from the package mount surface?

No. The TO-247AC drain tab is internally connected to the drain terminal and is not electrically isolated. An insulating washer or thermal pad with dielectric strength ≥500 V is mandatory when mounting to a grounded heatsink to prevent short circuits.

IRF6633TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MP

IRF6633TR1PBF FAQ

1.How can I place an order for IRF6633TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6633TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6633TR1PBF reliable?

The price and inventory of IRF6633TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6633TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6633TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6633TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6633TR1PBF?

IRF6633TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6633TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6633TR1PBF?

For technical support, including IRF6633TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6633TR1PBF requirements.

6.How does Aetrix verify that IRF6633TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6633TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6633TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6633TR1PBF?

All IRF6633TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6633TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6633TR1PBF part is unused and in its original packaging.

Return procedure for IRF6633TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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