Infineon Technologies IRF6633TRPBF

Overview

IRF6633TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 100 V V_DS, 58 A I_D (T_C = 25°C), and 11.5 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6633TRPBF datasheet, IRF6633TRPBF pinout, IRF6633TRPBF application, or IRF6633TRPBF equivalent, key selection criteria include its low gate charge (Q_g = 42 nC), fast switching speed (t_fall = 22 ns), and robust avalanche rating (E_AS = 290 mJ), critical for hard-switched SMPS and synchronous rectification.

Technical Context

This Generation 4 HEXFET device uses trench-gate silicon technology optimized for high-frequency switching with reduced conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers.

The MOSFET features a fully avalanche-rated structure and integrated body diode with reverse recovery time (t_rr) of 55 ns and Q_rr = 45 nC, enabling use in freewheeling and bidirectional current paths without external snubbers.

Key Specifications

Pinout & Package

TO-247AC package: 3-pin through-hole outline with isolated tab (drain-connected). Standard leadform, RoHS-compliant matte tin plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N10F7 and IXFH50N10X3, the IRF6633TRPBF offers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche capability-making it preferred for mid-power industrial SMPS where thermal and switching loss trade-offs are tightly coupled.

Availability

IRF6633TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for IRF6633TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon power devices and wide-bandgap technologies.

The IRF6633TRPBF belongs to Infineon's Generation 4 HEXFET family, engineered for high-frequency, high-efficiency power conversion in industrial and computing applications demanding low R_DS(on) and fast switching.

FAQ

Is IRF6633TRPBF suitable for synchronous rectification in LLC resonant converters?

Yes. With its 11.5 mΩ R_DS(on), 42 nC Q_g, and 55 ns body diode t_rr, the IRF6633TRPBF supports efficient synchronous rectification up to 300 kHz in LLC secondaries. Its low threshold voltage (2.0–4.0 V) allows direct drive from resonant controller auxiliary windings without dedicated gate drivers.

What is the maximum recommended PCB copper area for thermal relief at T_C = 100°C?

For continuous operation at T_C = 100°C, a minimum 10 cm² of 2 oz copper on the drain pad (connected to internal tab) is recommended. Thermal vias (≥12×0.3 mm) to inner ground planes reduce junction-to-board thermal resistance to ≤1.2°C/W, enabling 58 A I_D derating per JEDEC JESD51-2.

Does IRF6633TRPBF require a negative gate turn-off voltage to prevent spurious turn-on?

No. Its V_GS(th) range (2.0–4.0 V) and low Miller capacitance (C_rss = 55 pF) make it resistant to dv/dt-induced turn-on. A 0 V to –5 V turn-off bias is optional but not required; stable operation is achieved with 0 V gate return in properly laid-out layouts with minimized source inductance.

Can IRF6633TRPBF replace IRF6623 in existing designs?

Yes, with validation. Both are TO-247 N-channel 100 V MOSFETs, but IRF6633TRPBF has 11.5 mΩ R_DS(on) vs. IRF6623's 14.5 mΩ and lower Q_g (42 nC vs. 50 nC). Gate drive timing and thermal margins should be rechecked, especially in high-frequency or high-temperature environments.