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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6635

Name: IRF6635
Brand: Infineon Technologies
SKU: IRF6635
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6635

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6635.pdf

Description:: MOSFET N-CH 30V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:9,532

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Product details

Overview

IRF6635 from Infineon Technologies (formerly International Rectifier) is a 30V N-channel Power MOSFET in DirectFET® MX package, optimized as a SyncFET in high-frequency synchronous buck converters for CPU core power delivery. It delivers 1.3 mΩ R_DS(on) at V_GS = 10 V, 47 nC total gate charge, and ultra-low 1.4 °C/W junction-to-case thermal resistance with dual-sided cooling capability.

For engineers reviewing the IRF6635 datasheet, IRF6635 pinout, IRF6635 application, or IRF6635 equivalent, key selection criteria include low-profile thermal performance (<0.7 mm height), gate charge minimization for 500 kHz+ switching, and body diode recovery robustness (Q_rr = 48 nC, t_rr = 20 ns) in high-current DC-DC stages.

Technical Context

The IRF6635 employs trench-gated HEXFET silicon in a copper-can DirectFET MX package with top-side drain and bottom-side source/gate terminals - enabling simultaneous PCB-side and heatsink-side thermal paths. Its gate threshold voltage (1.8 V typ.) and steep transconductance (45 S) support precise gate drive control in digitally regulated VRMs.

This device is characterized for clamped inductive switching at V_DD = 15 V, I_AS = 25 A, and operates within a -40°C to +150°C junction range. Avalanche energy rating (E_AS = 500 mJ) and high C_dv/dt immunity ensure reliability during transient load steps in microprocessor power rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V max - supports 12 V input bus with margin for ringing and overshoot in point-of-load converters
R_DS(on)	1.3 mΩ @ 10 V - enables <1 W conduction loss at 32 A continuous drain current
Q_g	47 nC - reduces gate driver power demand and enables efficient 1–2 MHz operation
R_θJC	1.4 °C/W - allows direct thermal coupling to heatsink or copper plane without thermal interface material
Q_rr	48 nC - limits reverse recovery losses and EMI generation during high-dI/dt transitions
t_r/t_f	13 ns / 8.3 ns - supports fast edge rates while maintaining controllable dV/dt in synchronous rectification
I_D (T_C=25°C)	200 A - defines safe continuous current under ideal heatsinking conditions

Pinout & Package

IRF6635 uses the DirectFET® MX outline: a copper-can, double-sided cooling package with footprint compatible with SO-8 layouts but only 0.7 mm profile. Drain is exposed on the top surface; Source and Gate are soldered to the PCB via bottom-side terminals.

Pin/Terminal	Circuit Role	Design Meaning
Top Surface (Drain)	High-current power output node	Directly bonded to heatsink or thermal pad - primary path for >90% of heat dissipation
Bottom Pad (Source)	Reference node for gate drive and current return	Provides low-inductance source connection and serves as ground reference for gate driver ICs
Bottom Pad (Gate)	Control terminal for channel modulation	Minimizes gate loop inductance (<0.5 nH) to suppress oscillation during hard switching

Key Features

Feature	Design Value
Dual-sided cooling architecture	Reduces effective thermal resistance by 80% vs. standard SO-8 MOSFETs - enables 2× power density in VRM designs
Ultra-low Q_gd/Q_g ratio (17/47 nC)	Improves Miller immunity and enables stable operation with minimal gate resistor damping
Optimized for SyncFET socket	Matches gate drive timing and conduction characteristics of companion high-side FETs in integrated VRMs
Low-profile 0.7 mm height	Permits integration beneath low-clearance components (e.g., memory modules, BGA packages)
RoHS-compliant lead-free finish	Qualified for 260°C reflow - compatible with standard SMT assembly lines without process modification

Applications

CPU Core Voltage Regulator

GPU Power Delivery Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to modern x86 and ARM processors under dynamic load transients up to 300 A/µs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier (SyncFET) operating in continuous conduction mode at 300–1000 kHz.

Use Value: 1.3 mΩ R_DS(on) and 48 nC Q_rr minimize both conduction loss and body-diode reverse recovery loss during dead-time intervals.

Use Scenario: Compact, thermally constrained VRM on graphics card PCB delivering >400 W to GPU die with strict height limitations (<5 mm).

IC Role / Device Role / Timing Role: Bottom-side mounted power switch leveraging DirectFET top-surface drain for direct heatsink attachment.

Use Value: 0.7 mm profile and 1.4 °C/W R_θJC enable full thermal derating without external thermal vias or thick copper layers.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: Point-of-load regulator for DDR5 memory subsystems requiring tight voltage regulation (±10 mV) and fast transient response.

IC Role / Device Role / Timing Role: Low-R_DS(on) SyncFET paired with GaN high-side switch in hybrid topology.

Use Value: 1.8 mΩ R_DS(on) @ 4.5 V ensures stable operation with 5 V gate drive from integrated controller, reducing gate driver complexity.

Use Scenario: High-efficiency power stage for FPGA-based AI inference accelerators with burst-mode workloads and aggressive thermal cycling.

IC Role / Device Role / Timing Role: Primary low-side switch in interleaved 4-phase buck converter operating at 1 MHz.

Use Value: 47 nC Q_g and 13 ns t_r allow clean switching edges with minimal shoot-through risk under digital PWM control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622	Higher R_DS(on) (1.7 mΩ @ 10 V), same Q_g (47 nC), identical MX package	Lower current handling (180 A vs. 200 A); suitable where thermal margin exceeds 10%	Select when cost sensitivity outweighs marginal efficiency gain - no layout change required
SiR626DP	Lower Q_g (32 nC), slightly higher R_DS(on) (1.5 mΩ), same 30 V rating and PQFN package	Superior switching loss trade-off above 1 MHz; lacks top-side drain for dual cooling	Prefer for >1.2 MHz designs where gate drive loss dominates; requires thermal redesign

Compared with IRF6622 and SiR626DP, the IRF6635 uniquely balances lowest R_DS(on), industry-leading thermal resistance, and proven compatibility with existing VRM layouts - making it optimal for space-constrained, high-efficiency CPU/GPU core power stages below 1 MHz.

Availability

IRF6635 is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator power stages requiring stable component supply and long-term industrial availability.

Supply support for IRF6635 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

The IRF6635 belongs to the DirectFET® Power MOSFET product line, engineered specifically for high-density, high-efficiency DC-DC conversion in computing and data center applications where thermal and electrical performance are critical.

FAQ

Is IRF6635 RoHS-compliant and lead-free?

Yes, IRF6635PbF is RoHS-compliant and lead-free, qualified for standard 260°C reflow soldering per JEDEC J-STD-020. The device uses matte tin plating on copper terminals and meets IPC/JEDEC standard for Pb-free assembly compatibility.

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is 110 A (derated from 200 A at 25°C using the linear derating factor of 2.8 W/°C and R_θJC = 1.4 °C/W). This value assumes proper heatsinking and steady-state thermal conditions.

Can IRF6635 be used in avalanche-rated circuits?

Yes - IRF6635 is rated for single-pulse avalanche energy up to 500 mJ (E_AS) at I_AS = 25 A and starting T_J = 25°C. It is designed for unclamped inductive switching in synchronous buck topologies where the high-side FET may fail open-circuit.

Does IRF6635 require special PCB layout considerations beyond SO-8 footprints?

Yes - while footprint-compatible with SO-8, the DirectFET MX package requires dedicated thermal pads for both top-side (drain) and bottom-side (source/gate) connections. AN-1035 specifies minimum copper area, via placement, and stencil design for optimal solder joint integrity and thermal transfer.

IRF6635 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5970 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6635 FAQ

1.How can I place an order for IRF6635 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6635 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6635 reliable?

The price and inventory of IRF6635 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6635 is usually 5 days.

3.What payment methods are accepted for IRF6635?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6635 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6635?

IRF6635 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6635 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6635?

For technical support, including IRF6635 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6635 requirements.

6.How does Aetrix verify that IRF6635 is sourced from the original manufacturer or authorized distributors?

All IRF6635 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6635 meets industry standards.

7.What is the process for return or replacement of IRF6635?

All IRF6635 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6635, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6635 part is unused and in its original packaging.

Return procedure for IRF6635:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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