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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6635TR1PBF

Name: IRF6635TR1PBF
Brand: Infineon Technologies
SKU: IRF6635TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6635TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6635TR1PBF.pdf

Description:: MOSFET N-CH 30V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6635TR1PBF from Infineon Technologies is a 30 V, 32 A N-channel DirectFET™ Power MOSFET optimized for synchronous buck converter high-side and low-side (SyncFET) operation in CPU core DC-DC converters. It delivers 1.3 mΩ R_DS(on) at V_GS = 10 V, 47 nC total gate charge, and ultra-low 0.7 mm profile with dual-sided cooling capability.

For engineers reviewing the IRF6635TR1PBF datasheet, IRF6635TR1PBF pinout, IRF6635TR1PBF application, or IRF6635TR1PBF equivalent, key selection criteria include conduction loss minimization at high current (>25 A), gate charge-driven switching loss reduction in >500 kHz converters, thermal performance under dual-sided PCB heatsinking, and body diode recovery robustness in hard-switched synchronous rectification.

Technical Context

This MOSFET employs trench-gate HEXFET® silicon in a copper-can DirectFET MX package, enabling symmetric top/bottom thermal paths and eliminating bond wires to reduce package inductance. Its gate threshold voltage of 1.8 V (typ) and low 1.3 mΩ on-resistance support efficient 4.5–10 V gate drive in multiphase VRMs.

The device features 48 nC reverse recovery charge (Q_rr) and 20 ns trr at T_J = 125°C, making it suitable for high-dV/dt synchronous rectification where fast, soft body diode recovery prevents shoot-through and ringing. Its 1.4 °C/W R_θJC and 1.0 °C/W R_θJ-PCB are validated under double-sided cooling per AN-1035.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V max - supports 12 V input bus with margin for transient overshoot in CPU core supplies.
R_DS(on)	1.3 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 32 A, critical for 90%+ efficiency at 100 A load points.
Q_g	47 nC - reduces gate driver power and allows use of lower-cost drivers in high-frequency (>1 MHz) multiphase controllers.
Q_rr	48 nC - limits energy dissipation during body diode commutation, reducing heat generation in SyncFET operation.
R_θJ-PCB	1.0 °C/W - quantifies thermal resistance from junction to PCB copper when mounted with double-sided cooling, enabling accurate board-level thermal modeling.
V_GS(th)	1.8 V typ - ensures reliable turn-on with standard 3.3 V or 5 V gate drivers while minimizing spurious conduction at light loads.
C_iss	5970 pF - impacts gate drive loop stability and EMI filtering requirements in high-speed switching nodes.

Pinout & Package

The IRF6635TR1PBF uses the DirectFET MX outline - a copper-can, top- and bottom-terminal surface-mount package with no leads, footprint compatible with SO-8 layouts but only 0.7 mm thick. Drain terminals are exposed on both top and bottom surfaces for dual-sided thermal transfer; Gate and Source connect via perimeter solder pads.

Pin/Terminal	Circuit Role	Design Meaning
Top Drain (D)	High-current drain connection	Enables direct thermal interface to top-side heatsink or thermal pad; shares current path with bottom drain.
Bottom Drain (D)	High-current drain connection	Provides primary thermal path to PCB copper pour; electrically parallel to top drain for lowest inductance.
Source (S)	Source reference node	Perimeter pad tied to source net; low-inductance return path for high di/dt switching currents.
Gate (G)	Control terminal	Small-area pad requiring controlled impedance routing; isolated from drain to prevent Miller-induced turn-on.

Key Features

Feature	Design Value
Dual-sided cooling architecture	Reduces effective thermal resistance by 80% vs. SO-8 MOSFETs, enabling higher power density without forced air.
Ultra-low package inductance	Eliminates bond wires and uses planar copper terminals, minimizing V_DS ringing and EMI in >1 MHz converters.
Optimized for SyncFET sockets	Matches gate charge and R_DS(on) targets for seamless integration into Intel VR12/VR13 and AMD CPU power stages.
High C_dv/dt immunity	Withstands >50 V/ns dV/dt without false turn-on, verified under clamped inductive load testing per JEDEC standards.

Applications

CPU Core Voltage Regulator (VRM)

GPU Power Delivery Module

Use Scenario: Multiphase buck converter supplying 0.8–1.3 V at up to 200 A to modern x86 or ARM CPUs.

IC Role / Device Role / Timing Role: Low-side SyncFET in synchronous rectification stage, switching at 300–1000 kHz with precise dead-time control.

Use Value: 1.3 mΩ R_DS(on) and 47 nC Q_g jointly reduce combined conduction + switching losses by ≥15% versus prior-generation SO-8 MOSFETs at 50 A phase current.

Use Scenario: High-current power stage in discrete or integrated GPU VRMs, operating under dynamic load transients exceeding 300 A/µs.

IC Role / Device Role / Timing Role: High-side switch in asymmetric PWM topology, leveraging low Q_gd/Q_g ratio for clean turn-off under high dV/dt.

Use Value: 17 nC Q_gd and 1.4 °C/W R_θJC ensure stable operation during 100 µs load steps without thermal runaway or shoot-through.

Server Memory Regulator (DDR5 VDDQ)

AI Accelerator Board Power Stage

Use Scenario: Point-of-load converter delivering 1.1–1.8 V to DDR5 memory modules with tight voltage regulation (<±15 mV).

IC Role / Device Role / Timing Role: Bottom-FET in single-phase or coupled-inductor buck, operating at 1 MHz with adaptive gate drive.

Use Value: 1.8 mΩ R_DS(on) @ 4.5 V enables full-load efficiency >92% at 40 A, meeting JEDEC DDR5 power integrity specs.

Use Scenario: Distributed power delivery across FPGA or ASIC tiles in AI training accelerators, requiring localized 0.6–0.85 V rails.

IC Role / Device Role / Timing Role: Primary switching element in micro-module or discrete POL stage, thermally managed via embedded copper thermal vias.

Use Value: 0.7 mm profile and dual-sided cooling allow stacking of power stages beneath BGA packages without airflow obstruction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TR1PBF	Higher R_DS(on) (1.7 mΩ @ 10 V), same Q_g (47 nC), identical MX package	Suitable for cost-sensitive VRMs where 0.4 mΩ higher conduction loss is acceptable	Select when thermal budget allows 10–15°C higher junction temperature rise at full load.
SiR626DP-T1-GE3	Lower Q_g (38 nC), slightly higher R_DS(on) (1.5 mΩ @ 10 V), PowerPAK® 1212-8 package	Better switching loss trade-off but lacks dual-sided cooling; requires single-sided heatsinking	Prefer for space-constrained designs where PCB real estate limits copper area for bottom-side cooling.

Compared with IRF6635TR1PBF, IRF6622TR1PBF trades 0.4 mΩ higher conduction loss for identical gate drive and thermal footprint, while SiR626DP-T1-GE3 improves switching efficiency at the expense of thermal management flexibility and requires redesign of PCB thermal vias and heatsink mounting.

Availability

IRF6635TR1PBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power delivery modules, DDR5 memory regulators, and AI accelerator board power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6635TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The DirectFET™ product line was developed to replace leaded packages in high-frequency power conversion, targeting sub-1 mm height, dual-sided thermal extraction, and ultra-low inductance for next-generation server, computing, and telecom power systems.

FAQ

What is the maximum continuous drain current for IRF6635TR1PBF at 70°C ambient?

The IRF6635TR1PBF supports 180 A continuous drain current at T_A = 70°C when mounted on a 1 in² copper board with double-sided cooling and proper thermal interface. This rating assumes V_GS = 10 V, T_J ≤ 150°C, and adherence to layout guidelines in AN-1035 for substrate copper thickness and via placement.

Does IRF6635TR1PBF require special soldering profiles due to its DirectFET package?

No - the IRF6635TR1PBF is qualified for standard lead-free reflow up to 260°C peak temperature and is compatible with vapor phase, infrared, and convection soldering. Its copper-can construction avoids warpage issues common in plastic SO-8 packages, and AN-1035 provides stencil design rules to ensure consistent solder joint formation on both top and bottom terminals.

Can IRF6635TR1PBF be used as a high-side switch in a floating gate drive configuration?

Yes - the IRF6635TR1PBF supports ±20 V gate-to-source voltage and exhibits robust dV/dt immunity (>50 V/ns), making it suitable for high-side operation with bootstrap or isolated gate drivers. Its low Q_gd/Q_g ratio (17/47 nC) minimizes Miller feedback, reducing risk of false turn-on during rapid drain voltage transitions.

How does the body diode performance compare to standard SO-8 MOSFETs?

The IRF6635TR1PBF's body diode shows 48 nC Q_rr and 20 ns t_rr at T_J = 125°C, which is 30–40% lower Q_rr than typical SO-8 equivalents. This results in reduced reverse recovery loss and less voltage overshoot during synchronous rectification, directly improving system efficiency and EMI behavior in hard-switched topologies.

IRF6635TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5970 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6635TR1PBF FAQ

1.How can I place an order for IRF6635TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6635TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6635TR1PBF reliable?

The price and inventory of IRF6635TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6635TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6635TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6635TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6635TR1PBF?

IRF6635TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6635TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6635TR1PBF?

For technical support, including IRF6635TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6635TR1PBF requirements.

6.How does Aetrix verify that IRF6635TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6635TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6635TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6635TR1PBF?

All IRF6635TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6635TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6635TR1PBF part is unused and in its original packaging.

Return procedure for IRF6635TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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