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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6635TRPBF

Name: IRF6635TRPBF
Brand: Infineon Technologies
SKU: IRF6635TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6635TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6635TRPBF.pdf

Description:: MOSFET N-CH 30V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6635TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® MX package, optimized for synchronous buck converter high-side and low-side (SyncFET) operation in CPU core DC-DC converters. It delivers 1.3 mΩ R_DS(on) @ V_GS = 10 V, 47 nC total gate charge, and 1.8 V gate threshold voltage, enabling high-frequency, high-efficiency power delivery to microprocessors.

For engineers reviewing the IRF6635TRPBF datasheet, IRF6635TRPBF pinout, IRF6635TRPBF application, or IRF6635TRPBF equivalent, key selection criteria include ultra-low on-resistance at 4.5 V drive, dual-sided cooling capability, <0.7 mm profile for space-constrained VRMs, and avalanche-rated ruggedness for clamped inductive switching.

Technical Context

This MOSFET employs HEXFET® silicon with trench-gate structure and is packaged in a copper-can DirectFET MX outline-featuring top-side drain, bottom-side source/gate terminals, and no leadframe. Its gate charge profile (Q_gs2 = 4.7 nC, Q_gd = 17 nC) minimizes Miller-induced switching delay and enables clean turn-off in hard-switched synchronous rectification.

The device supports bidirectional thermal pathing: heat flows simultaneously through top (drain) and bottom (source) metal surfaces into PCB copper and heatsinks. Its R_θJC = 1.4 °C/W and R_θJ-PCB = 1.0 °C/W reflect optimized thermal interface design for high-power density VRM layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - suitable for 12 V input, 1–2 V output synchronous buck stages with margin against transient overvoltage.
R_DS(on) @ 10 V	1.3 mΩ - reduces conduction loss to <12 mW at 32 A, critical for >90% efficiency at multi-phase CPU loads.
R_DS(on) @ 4.5 V	1.8 mΩ - ensures robust low-voltage gate drive compatibility with modern PWM controllers driving SyncFETs.
Q_g total	47 nC - balances switching speed and gate driver loading; enables sub-100 ns turn-off with 25 Ω gate resistor.
Q_rr	48 nC - low reverse recovery charge minimizes shoot-through risk and body diode losses during dead-time commutation.
V_GS(th)	1.8 V typical - ensures reliable enhancement-mode turn-on with standard logic-level gate drivers.
C_iss	5970 pF - high input capacitance necessitates careful gate loop layout to avoid oscillation but stabilizes V_GS during dV/dt events.

Pinout & Package

IRF6635TRPBF uses the DirectFET® MX package: a copper-can, leadless, double-sided cooling surface-mount outline measuring 6.3 mm × 5.0 mm × 0.7 mm. The package integrates drain on the top metal pad and source/gate on the bottom substrate, eliminating wirebonds and reducing parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current power terminal; serves as thermal interface to heatsink or top-layer copper pour.
Bottom Left Pad	Source (S)	Return path for load current; electrically and thermally connected to PCB ground plane.
Bottom Right Pad	Gate (G)	Control input; isolated by thin oxide; requires low-inductance gate trace routing to minimize ringing.

Key Features

Feature	Design Value
Dual-sided cooling architecture	Enables simultaneous heat extraction from top (drain) and bottom (source), improving thermal resistance by 80% vs. SO-8 equivalents.
Ultra-low package inductance	Eliminates bond wires and leadframe; reduces switching loop inductance to support >1 MHz operation without excessive voltage overshoot.
Synchronous buck-optimized R_DS(on)/Q_g ratio	1.3 mΩ/47 nC = 27.7 µΩ·nC - minimizes combined conduction + switching loss in high-duty-cycle VRM phases.
High C_dv/dt immunity	Rated for fast voltage transients up to 50 V/ns - prevents false turn-on during high-slew-rate node transitions in multiphase converters.
Avalanche energy rating	E_AS = 200 mJ - withstands unclamped inductive switching stress during startup, fault, or phase shedding without failure.

Applications

CPU Core Voltage Regulator (VRM)

GPU Power Delivery Module

Use Scenario: Multi-phase buck converter supplying 0.8–1.3 V at up to 300 A to high-performance x86 or Arm-based processors.

IC Role / Device Role / Timing Role: Low-side SyncFET switch operating in continuous conduction mode with 300–1000 kHz switching frequency.

Use Value: 1.3 mΩ R_DS(on) and 47 nC Q_g reduce per-phase loss by 18% versus prior-gen MOSFETs, enabling higher current density without thermal derating.

Use Scenario: Compact, high-current VRM on graphics card PCB delivering 0.9–1.2 V to GPU die under dynamic 200–250 A loads.

IC Role / Device Role / Timing Role: High-side FET in interleaved buck stage with tight layout constraints and aggressive thermal targets.

Use Value: 0.7 mm profile allows stacking with polymer capacitors; dual-sided cooling maintains T_J < 110°C at full load with passive heatsinking.

Server Memory Regulator (DDR5 VDDQ)

AI Accelerator Board Power Stage

Use Scenario: Point-of-load converter generating 1.1 V/60 A for DDR5 memory subsystems with strict ripple and transient response requirements.

IC Role / Device Role / Timing Role: Synchronous rectifier in 2-phase buck topology with adaptive dead-time control.

Use Value: Low Q_rr (48 nC) and fast trr (20 ns) suppress body-diode conduction loss and improve light-load efficiency by 2.3%.

Use Scenario: High-density power stage on PCIe accelerator card powering FPGA or ASIC fabric requiring 0.75–0.85 V at 150+ A.

IC Role / Device Role / Timing Role: Bottom-side FET in stacked-die, 4-phase VRM with integrated controller and power stage.

Use Value: MX outline footprint matches industry-standard layout templates; R_θJ-PCB = 1.0 °C/W enables direct thermal coupling to 4-layer internal copper planes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TRPBF	Higher R_DS(on) (1.8 mΩ @ 10 V), lower Q_g (35 nC), same MX package	Better suited for higher-frequency, lower-current phases where switching loss dominates	Select when optimizing for >1.2 MHz operation with moderate current (<20 A per phase)
SiR626DP-T1-GE3	30 V, 1.1 mΩ @ 10 V, 52 nC Q_g, PowerPAK® SO-8 package (0.9 mm height)	Larger footprint and single-sided cooling limit thermal performance in ultra-thin VRMs	Choose only if existing SO-8 layout reuse is mandatory and thermal headroom exceeds 15°C

Compared with IRF6635TRPBF, IRF6622TRPBF trades conduction loss for faster switching, while SiR626DP sacrifices thermal efficiency for board-level compatibility-making IRF6635TRPBF optimal for new high-density, high-current CPU/GPU VRM designs where dual-sided cooling is implemented.

Availability

IRF6635TRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, DDR5 memory regulators, and AI accelerator board power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6635TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The DirectFET® product line was developed specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure, emphasizing thermal performance, low inductance, and layout compatibility with advanced VRM topologies.

FAQ

What is the maximum continuous drain current for IRF6635TRPBF at 70°C ambient?

The IRF6635TRPBF supports 180 A continuous drain current at T_A = 70°C with proper PCB copper area and airflow. This rating assumes mounting on a 1 in² copper board with double-sided cooling and accounts for thermal derating above 25°C ambient using the 0.022 W/°C linear derating factor specified in the datasheet.

Does IRF6635TRPBF require a gate resistor for stability in synchronous buck applications?

Yes-a gate resistor of 1–5 Ω is recommended between driver output and gate terminal to dampen high-frequency ringing caused by interaction between gate charge (47 nC), low package inductance, and PCB trace inductance. Values above 10 Ω increase switching losses unnecessarily; values below 1 Ω risk oscillation during fast dV/dt transitions.

Can IRF6635TRPBF be used in parallel configurations for higher current capacity?

Yes-its positive temperature coefficient for R_DS(on) (24 mV/°C breakdown voltage tempco) and matched threshold voltage (1.35–2.35 V) enable stable current sharing across paralleled units. Layout symmetry, matched gate drive paths, and Kelvin-source connections are required to ensure balanced dynamic current distribution.

Is IRF6635TRPBF RoHS-compliant and halogen-free?

Yes-IRF6635TRPBF is RoHS-compliant and lead-free, qualified for reflow soldering up to 260°C. It meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and contains no brominated flame retardants or chlorine-based compounds per Infineon's material declarations.

IRF6635TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5970 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6635TRPBF FAQ

1.How can I place an order for IRF6635TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6635TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6635TRPBF reliable?

The price and inventory of IRF6635TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6635TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6635TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6635TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6635TRPBF?

IRF6635TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6635TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6635TRPBF?

For technical support, including IRF6635TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6635TRPBF requirements.

6.How does Aetrix verify that IRF6635TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6635TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6635TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6635TRPBF?

All IRF6635TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6635TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6635TRPBF part is unused and in its original packaging.

Return procedure for IRF6635TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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