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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6636

Name: IRF6636
Brand: Infineon Technologies
SKU: IRF6636
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6636

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ST

Datasheet:: IRF6636.pdf

Description:: MOSFET N-CH 20V 18A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:2,098

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Product details

Overview

IRF6636 from Infineon Technologies is a 20 V, 3.2 mΩ (at V_GS = 10 V) N-channel DirectFET™ Power MOSFET optimized for control FET socket in 12 V synchronous buck converters, featuring 18 nC total gate charge, ultra-low package inductance, and dual-sided cooling capability. It delivers low conduction and switching losses for high-efficiency CPU core DC-DC converters operating at elevated frequencies.

For engineers reviewing the IRF6636 datasheet, IRF6636 pinout, IRF6636 application, or IRF6636 equivalent, key selection criteria include R_DS(on) at 4.5 V (4.6 mΩ), Q_g (18 nC), thermal resistance R_θJC (3.0 °C/W), and compatibility with standard SMT assembly per AN-1035.

Technical Context

The IRF6636 employs HEXFET® silicon in a DirectFET™ ST-outline metal-can package with top-side drain and bottom-side source terminals, enabling dual-sided thermal interface. Its gate threshold voltage (1.55–2.45 V) and negative temperature coefficient (∆V_GS(th)/∆T_J = −6.4 mV/°C) support stable parallel operation.

Designed specifically for high-frequency synchronous buck topologies, it minimizes both conduction loss via 3.2 mΩ R_DS(on) @ 10 V and switching loss via low Q_gd (6.1 nC) and Q_oss (10 nC), while maintaining avalanche ruggedness (E_AS = 140 mJ at I_AS = 14 A).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage suitable for 12 V bus input systems with margin against transients.
R_DS(on) @ 10 V	3.2 mΩ - Enables <1.5 W conduction loss at 18 A continuous drain current in control FET position.
Q_g Total	18 nC - Low gate drive energy requirement supports efficient high-frequency PWM up to 1 MHz.
R_θJC	3.0 °C/W - Enables direct heatsink mounting to top (Drain) surface for high-power density thermal management.
Q_rr	7.3 nC - Low reverse recovery charge reduces shoot-through risk and EMI in synchronous rectification.
I_D @ T_A = 25°C	18 A - Continuous current rating under standard PCB-mount conditions without forced airflow.

Pinout & Package

IRF6636 uses the DirectFET™ ST-outline (Small Size Can, T-Designation) metal-can package: 4.75 × 3.70 mm footprint, 0.7 mm profile, top-side Drain (D) and bottom-side Source (S) terminals. No gate pad exposed on top; gate connects exclusively via bottom-side terminal.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-side power path connection; thermally coupled to heatsink for dual-sided cooling.
Bottom Left Pad	Source (S)	Low-side return path; electrically and thermally connected to PCB copper pour for enhanced conduction cooling.
Bottom Right Pad	Gate (G)	Control input with low-inductance layout; requires tight gate loop to minimize ringing during 100+ A/ns dI/dt switching.

Key Features

Feature	Design Value
DirectFET™ ST-package	0.7 mm profile enables ultra-thin power stages; compatible with MICRO-8 PCB footprints and vapor-phase reflow.
Dual-sided cooling	Thermal resistance reduced by 80% vs. SO-8; allows simultaneous heatsink contact to top (Drain) and PCB copper to bottom (Source).
Ultra-low package inductance	Minimizes voltage overshoot and EMI during hard-switching; critical for >500 kHz synchronous buck designs.
Optimized for control FET	Low R_DS(on) + low Q_g + low Q_gd balance reduces both conduction loss and Miller-induced turn-on risk.

Applications

Server CPU VRM

Laptop Core Regulator

Use Scenario: 12 V input to 0.8–1.3 V output, 30–60 A load, 500–1000 kHz switching frequency.

IC Role / Device Role / Timing Role: Control FET in two-phase synchronous buck converter delivering dynamic transient response for Intel/AMD processors.

Use Value: 3.2 mΩ R_DS(on) @ 10 V and 18 nC Q_g enable >92% peak efficiency at 40 A while maintaining <100 ns turn-off delay.

Use Scenario: Thin-profile notebook motherboard with strict height budget (<1.0 mm component clearance).

IC Role / Device Role / Timing Role: High-side switch in compact 2-phase core regulator powering mobile SoC with burst-mode light-load operation.

Use Value: 0.7 mm DirectFET™ ST package fits under heat spreader; dual-sided cooling maintains T_J < 105°C at 25 A continuous.

GPU Power Delivery

AI Accelerator VRM

Use Scenario: Multi-phase VRM supplying 0.7–1.2 V to discrete GPU with >100 A peak current and fast di/dt demands.

IC Role / Device Role / Timing Role: Control FET handling high dV/dt edge rates; body diode used only during dead-time conduction.

Use Value: 7.3 nC Q_rr and 16 ns trr reduce reverse recovery loss and associated EMI, improving signal integrity near high-speed SerDes lanes.

Use Scenario: 3–6 phase 12 V input VRM for AI inference accelerators requiring sub-100 ns load-step response.

IC Role / Device Role / Timing Role: Primary control FET selected for minimal Q_gd/Q_g ratio (34%) to suppress Miller plateau duration and improve gate drive timing margin.

Use Value: 6.1 nC Q_gd ensures clean turn-off even with 1.5 Ω gate resistance, reducing risk of shoot-through during multi-phase interleaving.

Equivalent & Alternatives

The following parts are listed as comparable options for similar control-FET applications in high-frequency synchronous buck converters.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622	R_DS(on) = 2.9 mΩ @ 10 V, Q_g = 22 nC, same ST-outline package	Slightly lower R_DS(on) but higher gate charge increases switching loss above 600 kHz	Prefer IRF6636 when gate drive strength is limited or switching frequency exceeds 750 kHz.
SiR626DP	R_DS(on) = 3.0 mΩ @ 10 V, Q_g = 16.5 nC, PowerPAK® 1212-8 package (0.9 mm height)	Lower Q_g improves high-frequency efficiency but taller profile limits thin-form-factor use	Choose SiR626DP only if board height > 0.85 mm is acceptable and gate driver can support faster slew rates.

Compared with IRF6622 and SiR626DP, the IRF6636 uniquely balances ultra-low profile (0.7 mm), competitive R_DS(on), and gate charge optimized for 12 V bus VRMs-making it the preferred choice where mechanical envelope and 500–1000 kHz efficiency are co-constrained.

Availability

IRF6636 is available at Aetrix Electronics and suitable for server CPU VRMs, laptop core regulators, and AI accelerator power delivery systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6636 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF6636 belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.

FAQ

Is IRF6636 suitable for 4.5 V gate drive in logic-level applications?

Yes. The IRF6636 specifies R_DS(on) = 4.6 mΩ at V_GS = 4.5 V and operates reliably down to V_GS(th) = 1.55 V minimum, making it compatible with 5 V and 4.5 V logic-level gate drivers commonly used in notebook and server VRMs.

What is the maximum recommended PCB copper area for bottom-side source cooling?

Per AN-1035, a minimum 1 in² (645 mm²) of 2-oz copper connected directly to the bottom-source pad is recommended for optimal thermal performance; larger areas further reduce R_θJA but yield diminishing returns beyond 2 in².

Does IRF6636 require special solder paste or reflow profile due to its metal-can package?

No. The DirectFET™ ST-outline is qualified for standard lead-free (SAC305) solder paste and convection/vapor-phase reflow profiles; AN-1035 specifies peak temperature ≤ 260°C for ≤ 30 seconds, with ramp rate ≤ 3°C/s before and after peak.

Can IRF6636 be paralleled with identical units without external gate resistors?

Yes, but only with matched layout symmetry and Kelvin-source routing. Its negative V_GS(th) temperature coefficient promotes current sharing, yet individual 1–2 Ω gate resistors are recommended to dampen oscillation and ensure simultaneous turn-on across paralleled devices.

IRF6636 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric ST

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 81A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2420 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ ST

IRF6636 FAQ

1.How can I place an order for IRF6636 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6636 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6636 reliable?

The price and inventory of IRF6636 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6636 is usually 5 days.

3.What payment methods are accepted for IRF6636?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6636 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6636?

IRF6636 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6636 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6636?

For technical support, including IRF6636 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6636 requirements.

6.How does Aetrix verify that IRF6636 is sourced from the original manufacturer or authorized distributors?

All IRF6636 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6636 meets industry standards.

7.What is the process for return or replacement of IRF6636?

All IRF6636 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6636, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6636 part is unused and in its original packaging.

Return procedure for IRF6636:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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