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Infineon Technologies IRF6636TR1
- Part No.:
- IRF6636TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric ST
- Datasheet:
-
IRF6636TR1.pdf
- Description:
- MOSFET N-CH 20V 18A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,662
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Product details
Overview
IRF6636TR1 from Infineon Technologies (formerly International Rectifier) is a 20 V, N-channel DirectFET™ Power MOSFET optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers 3.2 mΩ RDS(on) at VGS = 10 V, 18 nC total gate charge, and ultra-low package inductance, enabling low conduction and switching losses in 12 V input DC-DC applications.
For engineers reviewing the IRF6636TR1 datasheet, IRF6636TR1 pinout, IRF6636TR1 application, or IRF6636TR1 equivalent, key selection criteria include its DirectFET ST-outline dual-sided cooling capability, 0.7 mm profile, 4.6 mΩ RDS(on) at 4.5 V, and optimization for control-FET socket operation in high-efficiency point-of-load converters.
Technical Context
The IRF6636TR1 employs HEXFET® silicon in a copper-can DirectFET ST package with top-side drain and bottom-side source terminals, enabling simultaneous PCB-side and heatsink-side thermal paths. Its gate threshold voltage of 1.8 V (typ.) and −6.4 mV/°C temperature coefficient support stable turn-on across −40°C to +150°C junction range.
Designed specifically for 12 V bus synchronous buck topologies, it balances low Qgd/Qg ratio (6.1 nC / 18 nC), low Ciss (2420 pF), and minimal package inductance to suppress voltage overshoot and reduce EMI during hard-switching at >1 MHz frequencies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage compatible with 12 V input rail systems with margin for transient spikes. |
| RDS(on) @ 10 V | 3.2 mΩ - Enables <1.5 W conduction loss at 18 A continuous drain current in compact layouts. |
| RDS(on) @ 4.5 V | 4.6 mΩ - Supports logic-level gate drive in low-voltage controller ICs without level-shifting. |
| Qg total | 18 nC - Low gate charge reduces driver power demand and enables fast turn-on/turn-off transitions. |
| Qgd | 6.1 nC - Minimizes Miller plateau duration, improving immunity to dv/dt-induced false turn-on. |
| RθJC | 3.0 °C/W - Enables efficient heat extraction via case-mounted heatsink or copper pour under drain pad. |
| Package | DirectFET ST - 4.75 × 3.70 × 0.70 mm footprint with dual-sided cooling and 0.7 mm profile. |
Pinout & Package
IRF6636TR1 uses the DirectFET ST (Small Size Can, T-Designation) package: a copper-can, top-drain/bottom-source surface-mount structure with no leads. The package features exposed drain on the top surface and source terminals on the bottom substrate, enabling dual-sided thermal management and ultra-low inductance interconnects.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad (Drain) | High-current drain connection and primary thermal path | Electrically and thermally connects to PCB copper pour or heatsink; carries full load current and dissipates >90% of heat. |
| Bottom Substrate Pads (Source) | Source return path and secondary thermal interface | Four symmetric source pads provide low-inductance return path and conduct heat to PCB ground plane. |
| Gate Pad (Bottom Edge) | Control terminal for MOSFET channel modulation | Small-area gate pad minimizes loop inductance; requires short, low-impedance trace to driver IC output. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Enables simultaneous thermal transfer from top (drain) and bottom (source), reducing RθJA by up to 80% vs. standard SO-8. |
| Ultra-low package inductance | Minimizes voltage ringing and EMI in high-dv/dt switching (>50 V/ns), critical for >1 MHz DC-DC operation. |
| Optimized for control-FET socket | Low RDS(on) and Qg reduce losses in high-side position of synchronous buck where voltage stress and switching frequency are highest. |
| Logic-level compatible | 1.8 V VGS(th) and 4.6 mΩ RDS(on) @ 4.5 V allow direct drive from PWM controllers with 5 V or 3.3 V gate outputs. |
| Robust avalanche rating | 140 mJ single-pulse EAS supports unclamped inductive switching in non-ideal layout conditions. |
Applications
| CPU Core Voltage Regulator | Server VRM Module |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying dynamic loads to Intel/AMD processors operating above 3 GHz. IC Role / Device Role: Control FET in high-side position, switching at 500 kHz–1.5 MHz with 12 V input. Use Value: 3.2 mΩ RDS(on) and 18 nC Qg minimize combined conduction and switching losses, sustaining >92% efficiency at 100 A output. |
Use Scenario: 12 V input, 0.8–1.8 V output VRM on enterprise server motherboards with tight thermal constraints. IC Role / Device Role: Primary high-side switch in 4–6 phase interleaved topology with digital PWM controller. Use Value: Dual-sided cooling allows thermal stacking with adjacent phases; 0.7 mm profile enables dense component placement under heatsink. |
| GPU Power Delivery | AI Accelerator Board |
|
Use Scenario: Point-of-load regulator for NVIDIA/AMD GPU cores requiring rapid transient response to burst workloads. IC Role / Device Role: High-frequency control FET paired with low-side sync-FET in 2–3 phase configuration. Use Value: Low Qgd/Qg ratio ensures clean turn-off during fast load steps, suppressing shoot-through risk and voltage droop. |
Use Scenario: Compact DC-DC module powering ASICs in AI training accelerators with strict size and thermal budgets. IC Role / Device Role: High-efficiency switching element in integrated power stage with embedded gate driver. Use Value: DirectFET ST outline fits within 5 mm × 5 mm footprint; ultra-low inductance eliminates need for external snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6622TR1PBF | Higher RDS(on) (4.0 mΩ @ 10 V), same Qg (18 nC), identical DirectFET ST package | Suitable for lower-current (<80 A) or cost-sensitive designs where 0.8 mΩ higher on-resistance is acceptable | Select when thermal margin exists and peak efficiency is secondary to BOM cost reduction. |
| SiR626DP-T1-GE3 | Lower RDS(on) (2.6 mΩ @ 10 V), higher Qg (24 nC), same 20 V rating and PQFN 3.3×3.3 mm package | Better conduction loss but higher switching loss; requires stronger gate driver due to increased Qg | Prefer when conduction loss dominates (e.g., high-Duty-cycle operation) and driver capability supports 24 nC charge. |
Compared with IRF6622TR1PBF and SiR626DP-T1-GE3, the IRF6636TR1 offers the optimal balance of low RDS(on), moderate Qg, and ultra-low inductance-making it uniquely suited for high-frequency, high-density CPU/GPU VRMs where both thermal and EMI constraints are severe.
Availability
IRF6636TR1 is available at Aetrix Electronics and suitable for CPU core voltage regulation, server VRM modules, and AI accelerator board power delivery requiring stable component supply across multi-year production cycles.
Supply support for IRF6636TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap device innovation.
The IRF6636TR1 belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and data center power systems.
FAQ
What is the maximum continuous drain current for IRF6636TR1 at 70°C ambient?
The IRF6636TR1 supports 15 A continuous drain current at TA = 70°C with proper PCB copper area (1 in² Cu board). This rating assumes surface-mount assembly per AN-1035, including recommended stencil design and vapor-phase reflow profile. Derating applies beyond 70°C ambient at 0.017 W/°C.
Can IRF6636TR1 be used in parallel configurations?
Yes-its positive RDS(on) temperature coefficient (15 mV/°C breakdown voltage drift) and matched threshold voltage distribution enable stable current sharing. Parallel operation requires symmetrical layout, matched gate drive impedance, and shared thermal interface to maintain <5°C die-to-die temperature delta.
Does IRF6636TR1 require special soldering processes?
No special process is required, but adherence to AN-1035 is mandatory: use controlled 260°C peak reflow (≤30 sec above 217°C), 0.127 mm stencil aperture for top drain pad, and substrate alignment verification. Vapor-phase, IR, or convection reflow are all supported when process limits are observed.
How does the DirectFET ST package improve thermal performance over SO-8?
The DirectFET ST package reduces junction-to-ambient thermal resistance to 12.5 °C/W (vs. ~62 °C/W for SO-8) by eliminating bond wires and plastic encapsulation, using copper can for direct die attachment, and enabling simultaneous top (drain) and bottom (source) heat extraction-delivering an 80% improvement in thermal transfer efficiency.
IRF6636TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric ST
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2420 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ ST
IRF6636TR1 FAQ
1.How can I place an order for IRF6636TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6636TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6636TR1 reliable?
The price and inventory of IRF6636TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6636TR1 is usually 5 days.
3.What payment methods are accepted for IRF6636TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6636TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6636TR1?
IRF6636TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6636TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6636TR1?
For technical support, including IRF6636TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6636TR1 requirements.
6.How does Aetrix verify that IRF6636TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6636TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6636TR1 meets industry standards.
7.What is the process for return or replacement of IRF6636TR1?
All IRF6636TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6636TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6636TR1 part is unused and in its original packaging.
Return procedure for IRF6636TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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