Infineon Technologies IRF6636TR1PBF

Overview

IRF6636TR1PBF from Infineon Technologies is an N-channel enhancement-mode Power MOSFET in DirectFET® ST package, optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers 3.2 mΩ R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and 20 V V_DS rating, enabling low conduction and switching losses in 12 V input DC-DC stages.

For engineers reviewing the IRF6636TR1PBF datasheet, IRF6636TR1PBF pinout, IRF6636TR1PBF application, or IRF6636TR1PBF equivalent, key selection criteria include gate charge balance (Q_gd/Q_gs2 = 6.1/1.9 nC), ultra-low profile (<0.7 mm), dual-sided cooling capability, and validated performance at 14 A continuous drain current with 1.8 V gate threshold.

Technical Context

This MOSFET employs HEXFET® silicon on a copper substrate DirectFET ST package, achieving 3.0 °C/W junction-to-case thermal resistance and 1.0 °C/W junction-to-PCB (mounted) via top-side drain and bottom-side source terminals. Its gate threshold voltage of 1.55–2.45 V enables robust 4.5 V logic-level drive compatibility.

The device features low output charge (Q_oss = 10 nC), reverse recovery charge (Q_rr = 7.3 nC), and Crss = 360 pF - all critical for minimizing shoot-through and dv/dt-induced turn-on in high-side synchronous FET applications operating up to 1 MHz.

Key Specifications

Pinout & Package

IRF6636TR1PBF uses the DirectFET® ST (Small Size Can, T-Designation) package: surface-mount, 4.8 × 3.8 × 0.7 mm, copper substrate with top-side drain and bottom-side source terminals. No separate gate pad - gate connects via etched trace on PCB substrate.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Compared with IRF6622TR1PBF and SiR626DP-T1-GE3, the IRF6636TR1PBF uniquely balances ultra-low R_DS(on), moderate Q_g, and dual-sided thermal access - making it optimal for space- and thermally constrained high-frequency CPU/GPU VRMs where both loss and height are co-constrained.

Availability

IRF6636TR1PBF is available at Aetrix Electronics and suitable for server CPU voltage regulator modules, laptop core power delivery, and GPU power stages requiring stable component supply and long-term industrial availability.

Supply support for IRF6636TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.

The DirectFET® product line was engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure, prioritizing thermal performance, switching speed, and package miniaturization.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6636TR1PBF supports 15 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu board). This rating assumes still air, double-sided cooling, and adherence to AN-1035 layout guidelines - exceeding typical SO-8 MOSFETs by 40% at equivalent temperature.

Can this MOSFET be used in a high-side configuration with 12 V input?

Yes - its 20 V V_DS rating provides 8 V margin above 12 V bus, and its 1.8 V V_GS(th) ensures robust turn-on with standard 3.3 V or 4.5 V gate drivers. The low Q_gd/Q_gs2 ratio further enhances high-side stability against Miller-induced false turn-on.

Is the DirectFET ST package compatible with standard reflow soldering processes?

Yes - the IRF6636TR1PBF is RoHS-compliant and qualified for lead-free reflow up to 260°C peak temperature. Successful assembly requires following Infineon's AN-1035 recommendations for stencil aperture design, substrate thickness, and thermal profiling to ensure void-free solder joints on both top and bottom terminals.

How does its thermal performance compare to SO-8 packaged MOSFETs?

With R_θJC = 3.0 °C/W and R_θJ-PCB = 1.0 °C/W (mounted), the IRF6636TR1PBF achieves up to 80% lower thermal resistance than comparable SO-8 devices. This is enabled by copper substrate construction and dual thermal paths - top-side drain to heatsink and bottom-side source to PCB ground plane - not possible in plastic-encapsulated packages.