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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6636TRPBF

Name: IRF6636TRPBF
Brand: Infineon Technologies
SKU: IRF6636TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6636TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ST

Datasheet:: IRF6636TRPBF.pdf

Description:: MOSFET N-CH 20V 18A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6636TRPBF from Infineon Technologies is a 20V N-channel DirectFET™ Power MOSFET optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers 3.2 mΩ R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and 0.7 mm profile with dual-sided cooling capability. Its low conduction and switching losses make it ideal for 12 V input DC-DC converters powering modern processors.

For engineers reviewing the IRF6636TRPBF datasheet, IRF6636TRPBF pinout, IRF6636TRPBF application, or IRF6636TRPBF equivalent, key selection criteria include R_DS(on) @ 4.5 V (4.6 mΩ), Q_gd/Q_gs2 ratio (6.1 nC / 1.9 nC), thermal resistance R_θJC (3.0 °C/W), avalanche energy rating (100 mJ), and compatibility with vapor-phase reflow per AN-1035.

Technical Context

This MOSFET employs HEXFET® silicon in a DirectFET ST-outline package-metal-can structure with top-side drain and bottom-side source/gate terminals. Its gate threshold voltage (1.55–2.45 V) enables robust 4.5 V drive in synchronous rectification, while ultra-low package inductance minimizes voltage overshoot during hard switching.

The device features a rated 14 A continuous drain current at T_A = 70 °C, 28 A pulsed current, and 140 mJ single-pulse avalanche energy (I_AS = 14 A). Its C_iss/C_oss/C_rss values (2420 pF / 780 pF / 360 pF at V_DS = 10 V) support precise loss modeling in high-dV/dt environments typical of multiphase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V maximum - supports 12 V bus operation with margin against transient overvoltage
R_DS(on)	3.2 mΩ @ 10 V - enables <1 W conduction loss at 18 A in control FET position
Q_g	18 nC - balances gate drive strength and switching speed for 500 kHz–1 MHz operation
Q_gd	6.1 nC - determines Miller plateau duration and dV/dt immunity in hard-switched topologies
R_θJC	3.0 °C/W - allows >40 W power dissipation with minimal case-to-heatsink thermal interface resistance
V_GS(th)	1.55–2.45 V - ensures reliable turn-on with standard 3.3 V or 5 V gate drivers
Q_rr	7.3 nC - reduces body diode recovery loss and EMI in synchronous rectifier applications

Pinout & Package

IRF6636TRPBF uses the DirectFET ST-outline package: metal-can, top-side drain (D), bottom-side source (S) and gate (G) terminals. Dimensions: 4.8 × 3.8 × 0.7 mm (L × W × H), RoHS-compliant lead-free finish qualified to 260 °C reflow.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary heat path and high-current output node; electrically connected to PCB copper pour for dual-sided cooling
Bottom Left Pad	Source (S)	Low-inductance return path for high di/dt currents; soldered directly to ground plane
Bottom Right Pad	Gate (G)	Control input with low parasitic inductance; requires localized gate resistor placement to suppress ringing

Key Features

Feature	Design Value
DirectFET ST package	0.7 mm height enables ultra-thin VRM designs and dual-sided thermal management
Low Q_gd/Q_g ratio	34% - improves controllability during Miller region and reduces shoot-through risk
High C_dv/dt immunity	Rated for >50 V/ns - maintains stable operation under fast transient load steps in CPU power stages
Body diode t_rr	16–24 ns - enables efficient synchronous rectification without external Schottky replacement
Thermal resistance R_θJ-PCB	1.0 °C/W - achieves >70% lower junction-to-PCB thermal impedance vs. SO-8 equivalents

Applications

Server CPU Voltage Regulator Modules

GPU Core Power Delivery

Use Scenario: Multiphase buck converter supplying 0.8–1.2 V @ up to 300 A to high-performance Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Control FET in high-side position, switching at 500 kHz–1 MHz with precise dead-time control.

Use Value: 3.2 mΩ R_DS(on) and 18 nC Q_g minimize combined conduction and switching losses, improving full-load efficiency by ≥0.8% vs. legacy SO-8 MOSFETs.

Use Scenario: Compact 6–12 phase VRM on graphics card PCB delivering 0.9–1.3 V @ 200+ A to discrete GPU die.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, leveraging fast body diode recovery (t_rr = 16 ns).

Use Value: Dual-sided cooling and 1.0 °C/W R_θJ-PCB enable 40% higher power density without thermal throttling under sustained gaming loads.

AI Accelerator Board Power Stages

High-Density Telecom DC-DC Modules

Use Scenario: 48 V–12 V intermediate bus converter feeding multiple point-of-load regulators on AI training hardware.

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant topology operating at 300–600 kHz.

Use Value: 140 mJ E_AS and 28 A I_DM withstand repetitive inductive stress from rapid AI workload transitions.

Use Scenario: 12 V–3.3 V/5 V isolated DC-DC module for 5G baseband units requiring high reliability and compact footprint.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward converter, driven by transformer-coupled gate signal.

Use Value: 4.6 mΩ R_DS(on) @ 4.5 V ensures full regulation down to light loads without gate-boost circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TRPBF	Higher R_DS(on) (4.0 mΩ @ 10 V), same Q_g (18 nC), identical ST package	Suitable where thermal margin exists but cost sensitivity is higher	Select when system derating allows 0.8 mΩ higher conduction loss for procurement flexibility
SiR626DP-T1-GE3	Lower R_DS(on) (2.7 mΩ @ 10 V), higher Q_g (24 nC), PowerPAK® 1212-8 package	Requires PCB redesign due to different footprint and thermal interface	Choose only if board layout permits larger 3.2 × 3.2 mm footprint and higher gate drive capability is available

Compared with IRF6636TRPBF, IRF6622TRPBF trades 25% higher conduction loss for identical switching behavior and drop-in compatibility, while SiR626DP-T1-GE3 improves conduction loss by 16% but increases gate drive demand and necessitates mechanical redesign-making IRF6636TRPBF optimal for space-constrained, thermally aggressive CPU VRMs.

Availability

IRF6636TRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulator modules, GPU core power delivery, and AI accelerator board power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6636TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The DirectFET product line was engineered specifically for high-efficiency, high-density DC-DC conversion in computing and telecom infrastructure-prioritizing ultra-low profile, dual-sided thermal extraction, and gate charge optimization for MHz-class switching.

FAQ

What is the maximum recommended gate drive voltage for IRF6636TRPBF?

The absolute maximum V_GS rating is ±20 V, but the device is characterized and optimized for 10 V drive in control-FET applications and 4.5 V in synchronous rectifier roles. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and ESD vulnerability-designs should use 10 V with appropriate gate driver slew rate limiting.

Does IRF6636TRPBF require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to dampen ringing caused by PCB trace inductance interacting with Q_gd and C_iss. For 500 kHz–1 MHz operation with standard 2 A peak gate drivers, a 2.2 Ω to 4.7 Ω surface-mount resistor placed adjacent to the gate pad is recommended; values below 1.5 Ω increase risk of oscillation, while above 10 Ω unnecessarily slows switching and raises losses.

How does the DirectFET ST package improve thermal performance over SO-8?

The DirectFET ST package reduces R_θJC to 3.0 °C/W versus ~6.5 °C/W for SO-8 equivalents by eliminating bond wires and using direct metal-to-metal thermal paths. Its top-side drain serves as primary heat spreader, enabling clip-based heatsinking or direct thermal interface to cold plates-achieving up to 80% lower junction-to-ambient resistance when dual-sided cooling is implemented per AN-1035 guidelines.

Can IRF6636TRPBF be used in linear mode (as a pass transistor)?

No-it is not rated or characterized for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows operation is limited to pulse widths ≤400 µs and duty cycle ≤2% at full current; sustained linear bias risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin. Use only in switched-mode configurations with proper snubbing and current limiting.

IRF6636TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric ST

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 81A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2420 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ ST

IRF6636TRPBF FAQ

1.How can I place an order for IRF6636TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6636TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6636TRPBF reliable?

The price and inventory of IRF6636TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6636TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6636TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6636TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6636TRPBF?

IRF6636TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6636TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6636TRPBF?

For technical support, including IRF6636TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6636TRPBF requirements.

6.How does Aetrix verify that IRF6636TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6636TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6636TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6636TRPBF?

All IRF6636TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6636TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6636TRPBF part is unused and in its original packaging.

Return procedure for IRF6636TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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