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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6638TR1PBF

Name: IRF6638TR1PBF
Brand: Infineon Technologies
SKU: IRF6638TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6638TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6638TR1PBF.pdf

Description:: MOSFET N-CH 30V 25A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6638TR1PBF from Infineon Technologies is a 30 V, 25 A N-channel DirectFET™ Power MOSFET optimized for synchronous buck converters in CPU core DC-DC applications. It delivers 2.2 mΩ R_DS(on) at V_GS = 10 V, 30 nC total gate charge, and 80% improved thermal resistance via dual-sided cooling - enabling high-efficiency, high-frequency power delivery to modern processors.

For engineers reviewing the IRF6638TR1PBF datasheet, IRF6638TR1PBF pinout, IRF6638TR1PBF application, or IRF6638TR1PBF equivalent, key selection criteria include C_dv/dt immunity (critical for synchronous FET turn-on avoidance), ultra-low profile (<0.7 mm), and compatibility with standard SMT reflow processes per AN-1035.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-clad DirectFET package with top-side drain and bottom-side source/gate terminals - enabling simultaneous PCB and heatsink cooling. Its gate threshold voltage (1.8 V typ.) and low Q_gd/Q_gs2 ratio (11 nC / 3.2 nC) support robust switching control under high dV/dt conditions typical in multiphase VRMs.

The device is characterized for operation up to T_J = 150°C, with R_DS(on) exhibiting +0.4%/°C temperature coefficient and avalanche-rated for E_AS = 140 mJ at I_AS = 20 A - supporting reliable unclamped inductive switching in compact converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12 V input bus with margin for transient spikes in point-of-load converters
R_DS(on) @ 10 V	2.2 mΩ - reduces conduction loss to <0.5 W at 25 A, critical for >90% efficiency targets
Q_g total	30 nC - enables fast switching with moderate gate drive strength (e.g., 1 A peak)
C_iss	3770 pF - low input capacitance minimizes Miller-induced oscillation risk in high-dV/dt layouts
T_J max	150°C - allows sustained operation in thermally constrained VRM modules without derating
Package height	0.6 mm - fits under low-profile CPU coolers and enables double-sided thermal interface design
C_dv/dt immunity	Rated for high immunity - prevents false turn-on during high-slew-rate node transitions in synchronous rectification

Pinout & Package

IRF6638TR1PBF uses the DirectFET™ M package - a surface-mount, copper-clip package with top-side drain (D) and bottom-side source (S)/gate (G) terminals. Dimensions: 6.25 × 4.80 × 0.6 mm (L × W × H), footprint compatible with SO-8 layouts.

Pin/Terminal	Circuit Role	Design Meaning
Top metal pad	Drain (D)	Primary current path and thermal interface - directly bonded to heatsink or copper plane for low R_θJC = 1.4°C/W
Bottom left pad	Source (S)	Power return and gate reference - large-area copper connection minimizes parasitic inductance in high-di/dt paths
Bottom right pad	Gate (G)	Control input - isolated from drain by dielectric layer; requires <1.8 V threshold drive for logic-level compatibility

Key Features

Feature	Design Value
Dual-sided cooling capability	Enables simultaneous top (heatsink) and bottom (PCB) thermal paths - reducing R_θJA by 80% vs. SO-8 equivalents
Ultra-low package inductance	Minimizes voltage overshoot and ringing during hard-switching - critical for 1–3 MHz VRM operation
Optimized for synchronous buck	Low Q_gd/Q_g ratio (37%) and high C_dv/dt immunity prevent shoot-through in high-side FET replacement
Lead-free & RoHS-compliant	Qualified for 260°C reflow - compatible with standard Pb-free assembly lines without process modification
Body diode performance	Q_rr = 27 nC, t_rr = 19 ns - supports efficient reverse recovery in discontinuous conduction mode (DCM)

Applications

CPU Core Voltage Regulator (VRM)

GPU Power Delivery Module

Use Scenario: Multiphase buck converter supplying 0.8–1.3 V at up to 200 A to Intel/AMD CPUs.

IC Role / Device Role / Timing Role: High-side synchronous FET operating at 300–1000 kHz with tight dead-time control.

Use Value: 2.2 mΩ R_DS(on) and 30 nC Q_g enable >93% efficiency at 150 A while maintaining thermal headroom under 150°C junction limit.

Use Scenario: Compact, high-density power stage on GPU reference board with limited board space.

IC Role / Device Role / Timing Role: Low-profile, dual-cooled FET replacing SO-8 devices to meet 0.7 mm height constraint.

Use Value: 0.6 mm height and DirectFET thermal design allow full-power operation without mechanical interference with GPU cooler mounting.

Server DDR Memory Regulator

AI Accelerator Board Power Stage

Use Scenario: Point-of-load converter delivering 1.2 V to DDR5 memory subsystems with fast load transients.

IC Role / Device Role / Timing Role: Low-R_DS(on) FET handling 40–60 A per phase with minimal voltage droop.

Use Value: Low Q_gd (11 nC) ensures stable gate drive under high dV/dt during rapid load steps, preventing false turn-on.

Use Scenario: High-current, high-frequency power stage on PCIe-based AI accelerator card with strict thermal limits.

IC Role / Device Role / Timing Role: Primary switching FET in 500 kHz–1 MHz buck converter powering FPGA or ASIC core rails.

Use Value: Dual-sided cooling and 1.4°C/W R_θJC sustain 120 A continuous current without external heatsink, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TR1PBF	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 24 nC; same DirectFET M package	Slightly higher conduction loss but lower gate charge - better for higher-frequency, lower-current phases	Select when optimizing for switching loss over conduction loss in sub-50 A phases
SiR626DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 32 nC; PowerPAK® 1212-8 package	Higher Q_g and single-sided cooling - requires more careful thermal management	Choose if existing layout uses PowerPAK footprint and dual-sided cooling is not feasible

Compared with IRF6622TR1PBF and SiR626DP-T1-GE3, the IRF6638TR1PBF uniquely balances lowest R_DS(on), industry-leading thermal resistance, and C_dv/dt immunity - making it optimal for high-current, high-reliability CPU/GPU VRMs where both efficiency and robustness are non-negotiable.

Availability

IRF6638TR1PBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power delivery modules, server DDR5 regulators, and AI accelerator board power stages requiring stable component supply and long-term lifecycle support.

Supply support for IRF6638TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and packaging innovation for high-efficiency power conversion.

The DirectFET™ product line was engineered specifically for high-frequency, high-current DC-DC conversion - targeting next-generation computing platforms where thermal density, switching speed, and reliability converge.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6638TR1PBF supports 25 A continuous drain current at T_A = 25°C and 14 A at T_A = 70°C when mounted on a 1 in² copper board with still air. Derating follows 0.022 W/°C above 70°C ambient, based on R_θJA = 45°C/W in standard test conditions.

Is IRF6638TR1PBF compatible with lead-free reflow soldering?

Yes - the device is RoHS-compliant and qualified for peak reflow temperatures up to 260°C per JEDEC J-STD-020. The DirectFET™ M package's copper structure and lead-free terminations ensure reliable solder joint formation using standard vapor-phase, infrared, or convection reflow profiles.

How does its C_dv/dt immunity compare to conventional SO-8 MOSFETs?

The IRF6638TR1PBF exhibits significantly higher C_dv/dt immunity due to its optimized gate oxide thickness, reduced Q_gd/Q_gs ratio (11 nC / 6.7 nC pre-V_th), and shielded gate structure - enabling stable operation at dV/dt rates exceeding 50 V/ns in synchronous buck topologies without external gate clamping.

Can it be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (+0.4%/°C) ensures inherent current sharing stability. Parallel operation is validated in multi-phase VRMs; recommended practices include matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink or copper plane to minimize thermal imbalance.

IRF6638TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6638TR1PBF FAQ

1.How can I place an order for IRF6638TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6638TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6638TR1PBF reliable?

The price and inventory of IRF6638TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6638TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6638TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6638TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6638TR1PBF?

IRF6638TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6638TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6638TR1PBF?

For technical support, including IRF6638TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6638TR1PBF requirements.

6.How does Aetrix verify that IRF6638TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6638TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6638TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6638TR1PBF?

All IRF6638TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6638TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6638TR1PBF part is unused and in its original packaging.

Return procedure for IRF6638TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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