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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6638TRPBF

Name: IRF6638TRPBF
Brand: Infineon Technologies
SKU: IRF6638TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6638TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6638TRPBF.pdf

Description:: MOSFET N-CH 30V 25A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6638TRPBF from Infineon Technologies is a 30 V, 25 A N-channel DirectFET™ Power MOSFET optimized for synchronous buck converters in CPU core DC-DC applications. It delivers 2.2 mΩ R_DS(on) at V_GS = 10 V, 30 nC total gate charge, and 80% improved thermal resistance via dual-sided cooling - enabling high-efficiency, high-frequency power delivery to modern processors.

For engineers reviewing the IRF6638TRPBF datasheet, IRF6638TRPBF pinout, IRF6638TRPBF application, or IRF6638TRPBF equivalent, key selection criteria include C_dv/dt immunity (critical for noise-resistant synchronous FET operation), ultra-low profile (<0.7 mm), and compatibility with standard SMT reflow processes per AN-1035.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-clad DirectFET™ package with top-side drain and bottom-side source/gate terminals - enabling simultaneous PCB-side and heatsink-side thermal paths. Its gate threshold voltage (1.8 V typ.) and low Q_gd/Q_gs2 ratio (11 nC / 3.2 nC) minimize Miller-induced turn-on risk during high dV/dt switching.

The device is characterized for clamped inductive switching (IAS = 20 A, EAS = 140 mJ) and exhibits 19 ns reverse recovery time (trr) with 27 nC Q_rr under diode conduction - supporting robust body-diode operation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input bus and 5–12 V output rails in point-of-load converters
R_DS(on) @ 10 V	2.2 mΩ - Enables <1 W conduction loss at 25 A, critical for >90% efficiency in 1–3 MHz buck stages
Q_g total	30 nC - Low gate drive energy reduces driver IC stress and enables fast 45 ns rise time with 25 Ω gate resistor
C_iss	3770 pF - Predictable input capacitance supports stable gate drive loop design without excessive damping
Thermal R_θJC	1.4 °C/W - Dual-sided cooling path allows direct thermal interface to both PCB copper and external heatsink
Package height	0.6 mm - Fits under low-profile VRM modules and avoids interference with adjacent tall components

Pinout & Package

IRF6638TRPBF uses the DirectFET™ M6 package (JEDEC MO-229 variant), a surface-mount copper-can package with top-side drain (D) and bottom-side source (S)/gate (G) terminals. The footprint matches SO-8 layouts but eliminates leadframe inductance and improves thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Top metal pad	Drain (D)	Primary high-current output node; thermally coupled to heatsink or copper plane for dual-sided cooling
Bottom left pad	Source (S)	Low-side return path; electrically and thermally connected to PCB ground plane
Bottom right pad	Gate (G)	Control terminal; isolated by thin oxide; requires <2.35 V V_GS(th) for turn-on

Key Features

Feature	Design Value
Dual-sided thermal interface	Reduces R_θJA by 80% vs. SO-8 MOSFETs - enables higher power density without forced airflow
C_dv/dt immunity	High intrinsic immunity due to low Q_gd/Q_gs ratio - prevents false turn-on in high-slew-rate synchronous buck phases
Ultra-low profile	0.6 mm height - fits within tight vertical envelopes of mobile and server VRMs
Lead-free reflow compatibility	Qualified for 260°C peak reflow per J-STD-020 - supports automated SMT assembly without special process deviation

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to x86 or ARM CPU cores at up to 3 MHz switching frequency.

IC Role / Device Role / Timing Role: Low-side synchronous FET handling continuous 25–60 A per phase with minimal conduction loss and fast switching.

Use Value: 2.2 mΩ R_DS(on) and 30 nC Q_g reduce combined conduction + switching losses by >15% vs. legacy SO-8 MOSFETs at 25 A/1 MHz.

Use Scenario: Compact, high-density VRM on graphics card PCB delivering 1.0–1.2 V to GPU die under dynamic load transients up to 100 A.

IC Role / Device Role / Timing Role: High-side or low-side switch in interleaved 4–6 phase topology requiring low inductance and fast turn-off.

Use Value: 0.6 mm profile avoids mechanical conflict with GPU memory stacks; 1.4 °C/W R_θJC maintains TJ < 125°C under 40 A steady-state load.

Server DDR Memory Regulator

AI Accelerator Module Supply

Use Scenario: Point-of-load regulator for DDR4/DDR5 memory subsystems requiring tight voltage regulation (±10 mV) and fast transient response.

IC Role / Device Role / Timing Role: Synchronous rectifier in 500 kHz–1 MHz buck stage with integrated controller feedback loop.

Use Value: 19 ns trr and 27 nC Q_rr ensure clean body-diode commutation during light-load discontinuous conduction mode (DCM).

Use Scenario: Multi-rail power system for FPGA or ASIC-based AI accelerators with independent 0.75 V, 1.2 V, and 3.3 V supplies.

IC Role / Device Role / Timing Role: Secondary-side FET in isolated DC-DC stage or non-isolated buck for auxiliary rails.

Use Value: Dual-sided cooling allows mounting directly to aluminum baseplate - eliminating thermal vias and reducing board layer count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TRPBF	Higher R_DS(on) (3.0 mΩ @ 10 V), same package and gate charge	Suitable for lower-current (<15 A) or cost-sensitive designs where thermal margin is available	Select when 0.8 mΩ higher on-resistance is acceptable to reduce BOM cost
SiR626DP-T1-GE3	Lower Q_g (22 nC), slightly higher R_DS(on) (2.6 mΩ), same 30 V rating and TDFN package	Better suited for very high-frequency (>2 MHz) operation where gate drive loss dominates	Prefer when optimizing for 2–5 MHz switching with moderate current (≤20 A)

Compared with IRF6622TRPBF and SiR626DP-T1-GE3, the IRF6638TRPBF offers the lowest R_DS(on) in its class - making it optimal for high-current, thermally constrained CPU/GPU VRMs where conduction loss is the dominant contributor to inefficiency.

Availability

IRF6638TRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery systems, and AI accelerator module supplies requiring stable component supply and long-term production continuity.

Supply support for IRF6638TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The DirectFET™ product line was developed to replace traditional leaded packages in high-efficiency DC-DC conversion - targeting server, computing, and telecom power systems where thermal performance and switching speed are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6638TRPBF supports 25 A continuous drain current at T_A = 25°C and 14 A at T_A = 70°C with proper PCB copper area (1 in² Cu board). Derating follows 0.022 W/°C above 70°C ambient, based on measured R_θJA = 45 °C/W under standard test conditions.

Is the IRF6638TRPBF RoHS-compliant and halogen-free?

Yes - the IRF6638TRPBF is RoHS-compliant and lead-free, qualified for reflow soldering up to 260°C peak temperature per J-STD-020. It meets JEDEC MSL Level 1 requirements and contains no halogenated flame retardants per IEC 61249-2-21.

Can this MOSFET be used in avalanche-rated applications?

Yes - the IRF6638TRPBF is rated for unclamped inductive switching with EAS = 140 mJ (T_J = 25°C) and I_AS = 20 A. Avalanche capability is validated per JEDEC JESD24-11 and intended for limited-energy fault conditions, not continuous operation.

Does the DirectFET™ package require special PCB layout considerations?

Yes - the DirectFET™ M6 package requires dedicated thermal pads on both top and bottom layers. Application note AN-1035 specifies minimum copper area (≥1 in² per side), via placement (≥8 × 0.3 mm vias under source pad), and solder mask clearance to ensure reliable dual-sided thermal transfer and mechanical adhesion.

IRF6638TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6638TRPBF FAQ

1.How can I place an order for IRF6638TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6638TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6638TRPBF reliable?

The price and inventory of IRF6638TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6638TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6638TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6638TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6638TRPBF?

IRF6638TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6638TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6638TRPBF?

For technical support, including IRF6638TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6638TRPBF requirements.

6.How does Aetrix verify that IRF6638TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6638TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6638TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6638TRPBF?

All IRF6638TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6638TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6638TRPBF part is unused and in its original packaging.

Return procedure for IRF6638TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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