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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6641TR1PBF

Name: IRF6641TR1PBF
Brand: Infineon Technologies
SKU: IRF6641TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6641TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MZ

Datasheet:: IRF6641TR1PBF.pdf

Description:: MOSFET N-CH 200V 4.6A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6641TR1PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 26 A N-channel enhancement-mode MOSFET in DirectFET® MZ package, optimized for Class-D audio amplifier half-bridge stages. It delivers 51 mΩ R_DS(on) at V_GS = 10 V, 34 nC total gate charge, and 85–130 ns body-diode reverse recovery time, enabling high-efficiency, low-THD, low-EMI operation into 8 Ω loads up to 400 W per channel.

For engineers reviewing the IRF6641TR1PBF datasheet, IRF6641TR1PBF pinout, IRF6641TR1PBF application, or IRF6641TR1PBF equivalent, key selection criteria include its low-stray-inductance DirectFET® packaging, dual-sided cooling capability, 1.0 Ω internal gate resistance, and avalanche-rated 46 mJ single-pulse energy handling-critical for robust Class-D switching integrity.

Technical Context

This MOSFET employs trench-gate silicon with optimized Q_g, Q_rr, and R_DS(on) to minimize conduction loss, switching loss, and diode-induced distortion in high-frequency Class-D amplifiers. Its 200 V V_(BR)DSS and 11 A avalanche current rating support operation across 12–48 V rail systems with transient overvoltage resilience.

The DirectFET® MZ package integrates source and drain terminals on opposite sides of the copper substrate, enabling low-inductance source return paths and simultaneous top- and bottom-side thermal interface. Gate drive dynamics are shaped by 1.0 Ω integrated gate resistance and 9.5 nC Q_gd, supporting clean turn-off under high di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports Class-D amplifier rails up to 48 V with ≥4× voltage margin against switching spikes.
R_DS(on) @ V_GS = 10 V	51 mΩ typ. - Enables ≤1.3 W conduction loss at 5.5 A, critical for thermal management in compact audio modules.
Q_g	34 nC typ. - Reduces gate drive power and improves THD by minimizing Miller plateau duration during switching.
Q_rr	320–480 nC - Low reverse recovery charge suppresses diode-induced crossover distortion and EMI in half-bridge dead-time transitions.
trr	85–130 ns - Fast body-diode recovery ensures clean commutation in >300 kHz Class-D PWM frequencies.
R_θJC	1.4 °C/W - Enables direct heatsink mounting on both top and bottom surfaces, reducing junction-to-case thermal resistance by >50% vs. SO-8.
E_AS	46 mJ - Withstands unclamped inductive switching events common in speaker-load transients without failure.

Pinout & Package

IRF6641TR1PBF uses the DirectFET® MZ (Medium Size Can, Z-Designation) package: a copper-can surface-mount device with top-side drain, bottom-side source, and side-mounted gate terminal. The package supports dual-sided cooling and requires stencil-defined solder paste deposition per AN-1035.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-current path; electrically and thermally connected to PCB copper pour or heatsink via top-side thermal interface.
Bottom Metal Surface	Source (S)	Low-inductance return path; serves as main thermal interface to PCB ground plane or secondary heatsink.
Side Pad (Marked "G")	Gate (G)	Control input with 1.0 Ω internal series resistance; routed with controlled-impedance trace to minimize ringing.

Key Features

Feature	Design Value
DirectFET® packaging	Reduces package source inductance to <0.5 nH, cutting voltage overshoot and EMI in >300 kHz switching.
Optimized Q_rr and trr	320–480 nC Q_rr and 85–130 ns trr enable zero-voltage switching compatibility and <0.01% THD+N at full power.
Dual-sided cooling	Simultaneous top (drain) and bottom (source) thermal interfaces achieve <1.4 °C/W R_θJC, doubling power density vs. SO-8.
Class-D-specific silicon	Trench-gate process tuned for low Q_g/R_DS(on) ratio (0.67 nC/mΩ), improving efficiency above 90% at 100 W output.
Avalanche-rated	46 mJ E_AS and 11 A I_AR ensure reliable operation during speaker short-circuit or clipping events.

Applications

High-Fidelity Home Audio Amplifiers

Professional Stage Monitors

Use Scenario: 200–400 W per channel Class-D amplifier driving 4–8 Ω passive loudspeakers in compact enclosures.

IC Role / Device Role / Timing Role: High-side/low-side switch in half-bridge output stage, switching at 300–500 kHz with <100 ns dead time.

Use Value: 51 mΩ R_DS(on) and 34 nC Q_g enable >92% peak efficiency and <0.008% THD+N at rated power.

Use Scenario: Multi-channel touring-grade powered monitors with real-time DSP and dynamic headroom management.

IC Role / Device Role / Timing Role: Output stage switch handling 100+ A pulsed currents during bass transients and clipped signals.

Use Value: 46 mJ E_AS and 11 A I_AR prevent latch-up during sustained 20 ms speaker shorts or cable faults.

Automotive Infotainment Systems

Active Studio Reference Monitors

Use Scenario: 4–6 channel Class-D amplifier in vehicle head units powering door speakers and subwoofers.

IC Role / Device Role / Timing Role: Half-bridge switch operating from 12–14.4 V battery rail with load-dump transient immunity.

Use Value: Dual-sided cooling maintains T_J < 125°C under continuous 50 W/channel output in confined dash space.

Use Scenario: Bi-amplified near-field monitors with separate LF/HF channels and analog input stage.

IC Role / Device Role / Timing Role: Precision output switch where low Q_rr and tight R_DS(on) tolerance (<±15%) ensure channel-matched gain and phase.

Use Value: 85–130 ns trr and 320–480 nC Q_rr eliminate intermodulation distortion between 20 Hz–20 kHz fundamentals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TR1PBF	200 V, 32 A, R_DS(on) = 36 mΩ, Q_g = 42 nC, Q_rr = 410 nC	Higher current rating but higher Q_g and Q_rr; increases THD at >200 kHz switching.	Select when >30 A continuous current is required and THD <0.01% is acceptable above 100 W.
STW48N60M2	600 V, 48 A, R_DS(on) = 55 mΩ, Q_g = 120 nC, TO-247 package	Higher voltage rating but 3.5× higher Q_g and no dual-sided cooling; unsuitable for compact audio modules.	Select only for industrial 400 V DC bus amplifiers where board space and thermal constraints are less critical.

Compared with IRF6641TR1PBF, the IRF6662TR1PBF trades lower R_DS(on) for higher Q_g and Q_rr, increasing switching loss and THD in high-fidelity audio; the STW48N60M2's TO-247 form factor and excessive Q_g make it incompatible with space-constrained Class-D designs requiring <0.01% THD.

Availability

IRF6641TR1PBF is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, professional stage monitors, and automotive infotainment systems requiring stable component supply and long-term production continuity.

Supply support for IRF6641TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for demanding analog and switching applications.

This device belongs to Infineon's DirectFET® Digital Audio MOSFET product line, engineered specifically for Class-D amplifier output stages where low distortion, high efficiency, and thermal reliability are non-negotiable.

FAQ

What is the maximum continuous drain current for IRF6641TR1PBF at 70°C ambient temperature?

The maximum continuous drain current is 3.7 A at T_A = 70°C with proper PCB copper area and airflow. This rating assumes standard JEDEC 2S2P layout with 2 oz copper and 1 in² thermal pad; actual current capability rises to 26 A at T_C = 25°C with heatsink mounting.

Does IRF6641TR1PBF support dual-sided cooling, and how is it implemented?

Yes-its DirectFET® MZ package exposes drain on the top metal surface and source on the bottom surface, allowing simultaneous thermal interface to top-side heatsinks and bottom-side PCB copper pours. Implementation requires conformal thermal interface material on both sides and adherence to AN-1035 stencil design guidelines.

What is the significance of the 1.0 Ω internal gate resistance in IRF6641TR1PBF?

The integrated 1.0 Ω gate resistor dampens gate oscillation during fast switching, eliminating need for external gate resistors in most Class-D layouts. It reduces ringing-induced EMI and prevents spurious turn-on caused by dv/dt coupling, especially critical in half-bridge configurations with shared source nodes.

Can IRF6641TR1PBF be used in synchronous rectification applications?

No-it is not optimized for synchronous rectification. Its body diode has relatively high V_SD (1.3 V) and slow trr (85–130 ns), making it unsuitable for high-frequency SR in DC-DC converters. It is purpose-built for Class-D audio switching where body diode conduction is brief and controlled by dead-time management.

IRF6641TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MZ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Ta), 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 59.9mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2290 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MZ

IRF6641TR1PBF FAQ

1.How can I place an order for IRF6641TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6641TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6641TR1PBF reliable?

The price and inventory of IRF6641TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6641TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6641TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6641TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6641TR1PBF?

IRF6641TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6641TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6641TR1PBF?

For technical support, including IRF6641TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6641TR1PBF requirements.

6.How does Aetrix verify that IRF6641TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6641TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6641TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6641TR1PBF?

All IRF6641TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6641TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6641TR1PBF part is unused and in its original packaging.

Return procedure for IRF6641TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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