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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6644

Name: IRF6644
Brand: Infineon Technologies
SKU: IRF6644
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6644

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MN

Datasheet:: IRF6644.pdf

Description:: MOSFET N-CH 100V 10.3A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6644 from Infineon Technologies is an N-channel enhancement-mode Power MOSFET in DirectFET® MN package, optimized for high-frequency isolated DC-DC converters. It delivers 10.3 mΩ R_DS(on) at V_GS = 10 V, 100 V V_DSS, and 35 nC total gate charge, enabling low conduction and switching losses in primary-side bridge and secondary-side synchronous rectification topologies.

For engineers reviewing the IRF6644 datasheet, IRF6644 pinout, IRF6644 application, or IRF6644 equivalent, key selection criteria include its dual-sided cooling capability, ultra-low 0.7 mm profile, 1.4 °C/W R_θJC, compatibility with SO-8 PCB footprints, and avalanche-rated operation up to 800 mJ at I_AS = 6.2 A.

Technical Context

The IRF6644 employs HEXFET® silicon with trench-gate structure and is packaged in a copper-can DirectFET MN outline, where drain connects directly to both top and bottom metal surfaces for symmetrical thermal path. Its gate threshold voltage (V_GS(th)) is 3.7 V typical with -10 mV/°C temperature coefficient, and it supports gate drive voltages up to ±20 V.

It exhibits 11.5 nC Q_gd and 13.1 nC Q_sw, enabling fast turn-on/turn-off with t_d(on) = 17 ns and t_f = 16 ns under standard test conditions. The device integrates a body diode with 1.3 V V_SD and 42–63 ns t_rr, rated for 10 A continuous and 82 A pulsed source current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-to-source blocking voltage in hard-switched topologies.
R_DS(on)	10.3 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 10 A, critical for high-efficiency telecom DC-DC stages.
Q_g	35 nC - Low total gate charge reduces driver power demand and improves switching efficiency above 300 kHz.
R_θJC	1.4 °C/W - Enables direct heatsink mounting on either side, supporting dual-sided cooling for thermal management.
I_D (T_C = 25°C)	100 A - Sustains high peak currents in transient-loaded isolated converters without derating.
E_AS	800 mJ - Rated single-pulse avalanche energy ensures robustness during unclamped inductive switching events.

Pinout & Package

IRF6644 uses the DirectFET® MN (Medium Size Can, N-Designation) package: a surface-mount copper-can structure with exposed top and bottom drain terminals, gate and source solder pads on the periphery. Package footprint matches SO-8 layout; height ≤ 0.7 mm.

Pin/Terminal	Circuit Role	Design Meaning
Top Drain / Bottom Drain	Drain (D)	Electrically common high-current output terminal; enables dual-sided thermal interface and low-inductance power routing.
Source Pad (S)	Source (S)	Low-side reference node for gate drive; connected to PCB ground plane with minimal loop inductance.
Gate Pad (G)	Gate (G)	Control input requiring <35 nC charge; designed for 10 V nominal drive with 2.8–4.8 V V_GS(th) range.

Key Features

Feature	Design Value
Ultra-low profile packaging	0.7 mm max height - Fits space-constrained telecom and server power modules while maintaining SO-8 layout compatibility.
Dual-sided cooling	Direct thermal path via top/bottom drain - Reduces effective thermal resistance by 80% vs. conventional SO-8 MOSFETs.
Low gate charge	Q_g = 35 nC, Q_gd = 11.5 nC - Minimizes switching losses and driver stress in >500 kHz resonant and phase-shifted topologies.
Optimized for synchronous rectification	V_SD = 1.3 V, t_rr = 42 ns - Enables efficient secondary-side rectification with low forward drop and fast recovery.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated full-bridge converter for telecom shelf power.

IC Role / Device Role / Timing Role: High-side and low-side switching element in primary bridge leg, operating at 300–500 kHz.

Use Value: 10.3 mΩ R_DS(on) and 35 nC Q_g reduce total losses below 2.1 W at 10 A, enabling >95% efficiency at full load.

Use Scenario: Secondary-side synchronous rectifier in 12 V to 1.2 V point-of-load converter for CPU/GPU VRM.

IC Role / Device Role / Timing Role: Low-side rectifying switch replacing Schottky diode, driven by transformer-coupled gate signal.

Use Value: 1.3 V V_SD and 42 ns t_rr cut conduction loss by 40% vs. 40 V Schottky, improving light-load efficiency by 3.2%.

Industrial Isolated Supplies

High-Density AC-DC Adapters

Use Scenario: Main switch in 24–75 V universal-input isolated flyback or active-clamp forward supply for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side power switch handling 6.2 A continuous drain current with 100 V breakdown margin.

Use Value: 800 mJ E_AS rating ensures reliable operation during line transients and short-circuit events without snubber redesign.

Use Scenario: High-frequency switching transistor in compact 65 W GaN-assisted AC-DC adapter with active clamp flyback.

IC Role / Device Role / Timing Role: Clamp switch managing leakage energy and enabling ZVS transitions at >200 kHz.

Use Value: 1.4 °C/W R_θJC and dual-sided cooling allow 100% thermal derating at 70°C ambient, eliminating need for external heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRF6662	100 V V_DSS, 7.8 mΩ R_DS(on), 42 nC Q_g, same DirectFET MN package	Lower R_DS(on) but higher gate charge increases driver loss above 400 kHz	Prefer when conduction loss dominates and switching frequency ≤ 300 kHz
Vishay SiR626DP	100 V V_DSS, 11.5 mΩ R_DS(on), 32 nC Q_g, PowerPAK® SO-8 package	No dual-sided cooling; R_θJA = 45 °C/W vs. IRF6644's 12.5 °C/W with heatsink	Choose only if board layout prohibits DirectFET mounting or requires standard SO-8 reflow compatibility

Compared with IRF6662 and SiR626DP, the IRF6644 uniquely balances low R_DS(on), moderate Q_g, and dual-sided thermal performance-making it optimal for thermally constrained, high-frequency isolated converters where both efficiency and reliability must be sustained across -40°C to +125°C junction range.

Availability

IRF6644 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial isolated power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF6644 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF6644 belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-density, high-efficiency isolated DC-DC conversion in telecom, datacenter, and industrial power systems where thermal and space constraints dominate design trade-offs.

FAQ

What is the maximum recommended gate drive voltage for IRF6644?

The absolute maximum gate-to-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Operating above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and risk of overdrive-induced instability in high-dV/dt environments.

Can IRF6644 be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.11 Ω/°C) enables inherent current sharing. However, matched gate drive layout, identical PCB trace inductance, and symmetrical thermal mounting are required to achieve balanced conduction across paralleled units.

Does IRF6644 require a gate resistor for stability?

A gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 100 pF) interacting with PCB inductance. Without it, overshoot exceeding 20 V may occur during fast switching, risking gate oxide degradation over time.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode has t_rr = 42–63 ns and Q_rr = 69–100 nC, making it viable for synchronous rectification up to 1 MHz. However, zero-voltage switching must be ensured before diode conduction ends to avoid hard reverse recovery losses.

IRF6644 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MN

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 10.3A, 10V

Vgs(th) (Max) @ Id:: 4.8V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MN

IRF6644 FAQ

1.How can I place an order for IRF6644 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6644 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6644 reliable?

The price and inventory of IRF6644 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6644 is usually 5 days.

3.What payment methods are accepted for IRF6644?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6644 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6644?

IRF6644 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6644 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6644?

For technical support, including IRF6644 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6644 requirements.

6.How does Aetrix verify that IRF6644 is sourced from the original manufacturer or authorized distributors?

All IRF6644 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6644 meets industry standards.

7.What is the process for return or replacement of IRF6644?

All IRF6644 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6644, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6644 part is unused and in its original packaging.

Return procedure for IRF6644:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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