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Infineon Technologies IRF6644TR1
- Part No.:
- IRF6644TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MN
- Datasheet:
-
IRF6644TR1.pdf
- Description:
- MOSFET N-CH 100V 10.3A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:5,805
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Product details
Overview
IRF6644TR1 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® MN package, optimized for high-frequency isolated DC-DC converters. It delivers 10.3 mΩ RDS(on) at VGS = 10 V, 100 V VDSS, 100 A pulsed drain current, and supports dual-sided cooling for thermal management in telecom and server power supplies.
For engineers reviewing the IRF6644TR1 datasheet, IRF6644TR1 pinout, IRF6644TR1 application, or IRF6644TR1 equivalent, key selection criteria include low gate charge (35 nC), ultra-low package inductance, 1.4 °C/W RθJC, compatibility with SO-8 PCB footprints, and suitability for primary-side bridge switches and secondary-side synchronous rectifiers in 36–75 V universal-input systems.
Technical Context
The IRF6644TR1 uses HEXFET® silicon with DirectFET® MN packaging - a top-side-drain, bottom-side-source copper can structure enabling simultaneous top and bottom thermal interface. Its gate threshold voltage (VGS(th)) is 2.8–4.8 V with negative temperature coefficient (−10 mV/°C), and it features low Crss (100 pF) and Ciss (2210 pF) for fast switching in hard-switched and resonant topologies.
Designed for isolated DC-DC applications, it operates with 100 V breakdown rating and exhibits 69–100 nC Qrr and 42–63 ns trr in body diode conduction. The device sustains unclamped inductive switching up to 1000 mJ EAS at IAS = 6.2 A, supporting robust operation under transient overload conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands up to 100 V drain-to-source blocking voltage in primary-side switch position of telecom DC-DC converters. |
| RDS(on) | 10.3 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 10 A continuous drain current in compact 12 V output rails. |
| Qg | 35 nC - Reduces gate drive power and enables efficient operation with standard 1–2 A peak gate drivers at >500 kHz switching. |
| Qgd | 11.5 nC - Low Miller charge minimizes switching instability and dv/dt-induced turn-on risk in high-side configurations. |
| RθJC | 1.4 °C/W - Enables direct heatsink mounting on drain side while maintaining junction temperature below 125°C at 89 W dissipation. |
| trr / Qrr | 42–63 ns / 69–100 nC - Supports synchronous rectification with low reverse recovery loss in secondary-side FETs. |
Pinout & Package
IRF6644TR1 uses the DirectFET® MN (Medium Size Can, N-Designation) package: a low-profile (0.7 mm), top-drain/bottom-source copper can with no leads. It mounts directly to PCB via soldered copper pads and supports dual-sided thermal interface - drain pad on top, source terminals on bottom substrate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad (Drain) | Drain terminal (D) | Primary high-current path for power switching; serves as thermal interface to heatsink or thermal plane on board top layer. |
| Bottom Substrate Pads (Source) | Source terminal (S) | Low-inductance return path; connects to ground/power plane on PCB bottom layer; enables symmetric current distribution. |
| Side Terminal (Gate) | Gate terminal (G) | Control input located on side edge; minimized loop area reduces EMI and gate ringing during fast transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling capability | Enables simultaneous thermal interface to top (drain) and bottom (source) layers - improves thermal resistance by 80% vs. SO-8 packages. |
| Ultra-low package inductance | Reduces voltage overshoot and ringing during hard switching, critical for >300 kHz operation in LLC and phase-shifted full-bridge converters. |
| Optimized for synchronous rectification | Low Qrr and fast trr allow replacement of Schottky diodes in secondary-side rectification without shoot-through risk. |
| SO-8 footprint compatibility | Uses same PCB layout area as SO-8 MOSFETs - allows drop-in upgrade path without redesigning board space or stencil. |
Applications
| Telecom DC-DC Primary Switch | Server PSU Synchronous Rectifier |
|---|---|
|
Use Scenario: Primary-side switch in isolated half-bridge or full-bridge DC-DC converter for 48 V input telecom systems (36–75 V range). IC Role / Device Role / Timing Role: High-side or low-side power switching element operating at 200–500 kHz with 100 V blocking requirement. Use Value: 10.3 mΩ RDS(on) and 35 nC Qg reduce total losses by ≥15% versus comparable SO-8 MOSFETs, improving system efficiency to >95%. |
Use Scenario: Secondary-side synchronous rectifier in regulated 12 V output stage of server power supply units. IC Role / Device Role / Timing Role: Body-diode-replacement FET in forward or LLC topology, driven by transformer-coupled or active gate control. Use Value: 42–63 ns trr and 69–100 nC Qrr minimize reverse recovery loss, reducing heat generation by 30% compared to discrete Schottky solutions. |
| Industrial Isolated Auxiliary Supply | High-Density Point-of-Load Converter |
|
Use Scenario: Compact auxiliary power supply for PLC or motor drive controllers requiring isolated 5 V/3.3 V rails. IC Role / Device Role / Timing Role: Primary-side switch in flyback or active-clamp forward converter with 100 V input derating margin. Use Value: 100 V VDSS and −40°C to +150°C TJ rating ensure reliable operation across industrial ambient extremes without derating. |
Use Scenario: High-current, high-efficiency buck converter delivering up to 60 A at 1.2 V for FPGA or ASIC core supplies. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck configuration with paralleled devices and aggressive thermal management. Use Value: 1.4 °C/W RθJC and 0.7 mm profile enable direct thermal coupling to cold plate, sustaining 60 A continuous with <5°C ΔT rise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRF6662TR1PBF | 100 V VDSS, 7.8 mΩ RDS(on) @ 10 V, higher Qg (45 nC), same DirectFET MN package | Better conduction loss but slower switching due to higher gate charge - suited for lower-frequency (<300 kHz) high-current designs | Select when minimizing conduction loss dominates over switching loss; verify gate driver capability for 45 nC load. |
| Vishay SiR626DP | 100 V VDSS, 11.5 mΩ RDS(on) @ 10 V, 32 nC Qg, PowerPAK® SO-8 package (0.9 mm height) | Higher profile and single-sided cooling only; lacks dual thermal interface - limits power density in constrained thermal environments | Choose only if legacy SO-8 assembly process prohibits DirectFET requalification; expect ~20% higher thermal resistance. |
Compared with IRF6644TR1, IRF6662TR1PBF trades higher gate drive demand for lower conduction loss, while SiR626DP sacrifices thermal performance for SO-8 compatibility - making IRF6644TR1 optimal where dual-sided cooling and balanced switching/conduction loss are required.
Availability
IRF6644TR1 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server power supplies, and industrial isolated auxiliary supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IRF6644TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF6644TR1 belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-power-density, high-efficiency isolated DC-DC conversion in telecom, datacenter, and industrial power systems.
FAQ
What is the maximum continuous drain current for IRF6644TR1 at 70°C ambient?
The IRF6644TR1 supports 6.2 A continuous drain current at TA = 70°C with proper PCB copper area (1 in² Cu board). This rating assumes surface-mount installation per AN-1035 guidelines and accounts for thermal derating above 25°C ambient. At TC = 25°C, the limit rises to 10.3 A.
Does IRF6644TR1 require special soldering processes?
Yes - IRF6644TR1 must be assembled using vapor-phase, infrared, or convection reflow per application note AN-1035. Its DirectFET® MN package has specific stencil design, substrate layout, and thermal profile requirements to ensure void-free solder joints and mechanical reliability. Hand-soldering is not recommended.
Can IRF6644TR1 replace SO-8 MOSFETs without PCB changes?
Yes - the DirectFET® MN outline matches the SO-8 footprint area (though not pin-compatible), allowing reuse of existing PCB land patterns and stencils. However, gate placement differs: IRF6644TR1 places the gate on the side edge rather than corner pins, requiring minor layout verification for routing clearance and thermal relief.
What is the avalanche energy rating for IRF6644TR1?
The IRF6644TR1 is rated for 1000 mJ single-pulse avalanche energy (EAS) at IAS = 6.2 A, L = 12 mH, RG = 25 Ω, and starting TJ = 25°C. This rating supports robustness against inductive switching transients in hard-switched topologies without external snubbers.
IRF6644TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.3A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 10.3A, 10V
- Vgs(th) (Max) @ Id:
- 4.8V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2210 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MN
IRF6644TR1 FAQ
1.How can I place an order for IRF6644TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6644TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6644TR1 reliable?
The price and inventory of IRF6644TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6644TR1 is usually 5 days.
3.What payment methods are accepted for IRF6644TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6644TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6644TR1?
IRF6644TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6644TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6644TR1?
For technical support, including IRF6644TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6644TR1 requirements.
6.How does Aetrix verify that IRF6644TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6644TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6644TR1 meets industry standards.
7.What is the process for return or replacement of IRF6644TR1?
All IRF6644TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6644TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6644TR1 part is unused and in its original packaging.
Return procedure for IRF6644TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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