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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6644TR1PBF

Name: IRF6644TR1PBF
Brand: Infineon Technologies
SKU: IRF6644TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6644TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MN

Datasheet:: IRF6644TR1PBF.pdf

Description:: MOSFET N-CH 100V 10.3A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6644TR1PBF from Infineon is a 100V N-channel enhancement-mode Power MOSFET in DirectFET™ MN package, optimized for primary-side switching in isolated DC-DC converters and synchronous rectification. It delivers R_DS(on) = 10.3 mΩ @ V_GS = 10 V, Q_g = 28 nC, and supports 57 A continuous drain current at T_C = 25°C - enabling high-efficiency, low-temperature operation in telecom and server power supplies.

For engineers reviewing the IRF6644TR1PBF datasheet, IRF6644TR1PBF pinout, IRF6644TR1PBF application, or IRF6644TR1PBF equivalent, key selection criteria include its ultra-low profile (<0.7 mm), dual-sided cooling capability, 100V V_DS rating, gate threshold voltage of 3.7 V (typ.), and compatibility with standard SMT reflow up to 260°C.

Technical Context

This MOSFET employs HEXFET® silicon combined with DirectFET® MN packaging to achieve industry-leading R_DS(on)-to-footprint density - matching SO-8 layout while reducing thermal resistance by 80% via dual-sided cooling. Its gate charge profile (Q_gd = 9.0 nC, Q_sw = 16 nC) enables fast, low-loss switching in hard-switched and resonant topologies.

The device is characterized for stable operation across -40°C to 150°C junction temperature, with V_GS(th) = 3.7 V (typ.) and negative tempco (-11 mV/°C), ensuring predictable turn-on behavior under thermal stress. Avalanche energy rating of 86 mJ supports robustness in inductive switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports universal input telecom (36–75 V) and 48 V intermediate bus systems with margin for transient spikes.
R_DS(on) (typ.)	10.3 mΩ @ V_GS = 10 V - reduces conduction loss to <0.37 W at 60 A, critical for >95% efficiency in high-current DC-DC stages.
Q_g	28 nC - enables efficient gate drive with low-power controllers; Q_gd/Q_g ratio of 32% supports clean hard-switching transitions.
I_D (cont., T_C=25°C)	57 A - allows single-device implementation in 300–500 W isolated forward or LLC primary switches without paralleling.
V_GS(th)	3.7 V (typ.) - ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers, avoiding marginal biasing.
R_θJC	1.4 °C/W - enables direct heatsink mounting on both top (Drain) and bottom (Source) surfaces, cutting junction-to-case thermal path by >50% vs. SO-8.

Pinout & Package

IRF6644TR1PBF uses the DirectFET™ MN package: ultra-thin (0.65 mm max height), double-sided thermal interface, with exposed Drain on top and Source/Drain terminals on bottom. Footprint matches SO-8 but with enhanced thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal (Drain)	High-side switch node / Heat sink interface	Electrically connects to drain; serves as primary thermal path to heatsink - requires solder mask-defined thermal pad on PCB top layer.
Bottom Left (Source)	Power return / Low-side reference	Low-inductance source connection; forms half of dual-sided cooling stack when paired with top Drain heatsink.
Bottom Right (Gate)	Control input	Isolated gate terminal with 1.6 Ω internal gate resistance - minimizes ringing and simplifies gate driver layout.
Bottom Center (Drain)	Power input / High-side node	Parallel drain path to top metal; enables low-impedance, low-inductance connection to primary bus or transformer center-tap.

Key Features

Feature	Design Value
DirectFET™ MN packaging	Enables dual-sided cooling and 80% lower R_θJA vs. SO-8, allowing >2× power density in same PCB area.
Optimized for synchronous rectification	Low Q_rr (97–146 nC) and fast t_rr (53–80 ns) minimize body diode conduction loss during dead-time in secondary-side FETs.
100 V breakdown rating	Supports 48 V input systems with 2× overvoltage margin, meeting IEC/EN 62368-1 surge requirements for telecom infrastructure.
Lead-free & RoHS compliant	Qualified for 260°C reflow, compatible with automated SMT lines without process modification or special flux.

Applications

Telecom DC-DC Converters

Server VRM Primary Switches

Use Scenario: 48 V input, 12 V output isolated forward converter in 5G base station power modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–500 kHz with zero-voltage switching (ZVS) assist.

Use Value: 10.3 mΩ R_DS(on) and 28 nC Q_g reduce total losses by 1.2 W vs. SO-8 alternatives, lowering thermal design burden.

Use Scenario: 48 V–12 V intermediate bus converter feeding multi-phase CPU VRMs in AI accelerator servers.

IC Role / Device Role / Timing Role: Hard-switched primary FET in asymmetric half-bridge topology, handling peak currents >100 A.

Use Value: Dual-sided cooling maintains T_J < 110°C at full load, extending reliability beyond 10-year field life targets.

Synchronous Rectifier (Secondary)

Industrial Isolated SMPS

Use Scenario: Secondary-side synchronous rectification in 12 V/60 A regulated LLC resonant converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Low-side rectifier FET driven by self-driven or controller-synchronized gate signal.

Use Value: 1.3 V V_SD and 53 ns t_rr cut reverse recovery loss by 40% compared to discrete Schottky solutions.

Use Scenario: 24–72 V wide-input isolated flyback supplying 5 V/3 A control logic in factory automation I/O modules.

IC Role / Device Role / Timing Role: Primary switch operating in discontinuous conduction mode (DCM) with 65 kHz fixed frequency.

Use Value: 100 V V_DS and -40°C to 150°C T_J rating ensure robustness across industrial ambient extremes and line surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TR1PBF	150 V V_DS, 14.5 mΩ R_DS(on), higher Q_g (35 nC)	Better surge margin but 40% higher conduction loss at 48 V input	Select when system requires >120 V transient immunity and can accept reduced efficiency.
SiR626DP-T1-GE3	100 V, 11.5 mΩ, TrenchFET® Gen IV, PQFN 5×6 mm	Higher R_θJA (15 °C/W), no dual-sided cooling, larger footprint	Choose if existing PCB layout lacks top-side thermal pad access but needs similar R_DS(on).

Compared with IRF6644TR1PBF, the IRF6662TR1PBF trades efficiency for voltage headroom, while the SiR626DP-T1-GE3 sacrifices thermal performance for layout simplicity - making IRF6644TR1PBF optimal where dual-sided cooling and minimal R_DS(on) are prioritized.

Availability

IRF6644TR1PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRM primary switches, and industrial isolated SMPS requiring stable component supply, high thermal reliability, and RoHS-compliant manufacturing.

Supply support for IRF6644TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and qualification infrastructure.

The DirectFET™ Power MOSFET product line was engineered specifically for high-density, high-efficiency power conversion - targeting datacenter, telecom, and industrial isolated DC-DC applications where thermal and space constraints dominate design trade-offs.

FAQ

What is the maximum allowable gate voltage for IRF6644TR1PBF?

The absolute maximum gate-to-source voltage is ±20 V per datasheet Table 2. Operation above +12 V or below -5 V is not recommended for long-term reliability; typical gate drive uses +10 V for full enhancement and 0 V or -5 V for turn-off to suppress dv/dt-induced false turn-on.

Does IRF6644TR1PBF require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to dampen ringing and control dV/dt. Infineon recommends 5–10 Ω in series with the gate driver output. The device's internal R_G is 1.6 Ω, so external resistance should be selected to limit peak gate current to <2 A while maintaining <50 ns rise/fall times.

Can IRF6644TR1PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (10.3 → 13 mΩ from 25°C to 125°C) enables inherent current sharing. For stable paralleling, match gate drive loop inductance, use Kelvin source connections, and ensure identical thermal mounting on both devices to avoid thermal runaway.

What is the thermal performance difference between DirectFET™ MN and standard SO-8 packages?

DirectFET™ MN achieves R_θJC = 1.4 °C/W versus ~3.5 °C/W for SO-8, and R_θJA = 12.5 °C/W (dual-sided cooling) versus ~45 °C/W (SO-8, single-sided). This translates to ~25°C lower junction temperature at 50 W dissipation, directly improving FIT rate and lifetime.

IRF6644TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 10.3A, 10V

Vgs(th) (Max) @ Id:: 4.8V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2210 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MN

IRF6644TR1PBF FAQ

1.How can I place an order for IRF6644TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6644TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6644TR1PBF reliable?

The price and inventory of IRF6644TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6644TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6644TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6644TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6644TR1PBF?

IRF6644TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6644TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6644TR1PBF?

For technical support, including IRF6644TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6644TR1PBF requirements.

6.How does Aetrix verify that IRF6644TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6644TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6644TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6644TR1PBF?

All IRF6644TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6644TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6644TR1PBF part is unused and in its original packaging.

Return procedure for IRF6644TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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