My Inquiry
My Account
Infineon Technologies IRF6645TR1PBF
- Part No.:
- IRF6645TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric SJ
- Datasheet:
-
IRF6645TR1PBF.pdf
- Description:
- MOSFET N-CH 100V 5.7A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,547
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF6645TR1PBF from Infineon Technologies is an N-channel enhancement-mode power MOSFET in DirectFET® SJ package, optimized for primary-side switching and secondary-side synchronous rectification in isolated DC-DC converters. It delivers 28 mΩ RDS(on) at VGS = 10 V, 100 V VDSS, and 5.7 A continuous drain current at TA = 25°C, enabling high-efficiency operation in telecom (36–75 V input) and server power supplies.
For engineers reviewing the IRF6645TR1PBF datasheet, IRF6645TR1PBF pinout, IRF6645TR1PBF application, or IRF6645TR1PBF equivalent, key selection criteria include its 0.7 mm profile for dual-sided cooling, 14 nC total gate charge for fast switching, and 80% improved thermal resistance versus prior packages-critical for high-density, thermally constrained isolated topologies.
Technical Context
This MOSFET employs HEXFET® silicon with trench-gate process and is packaged in a copper-can DirectFET® SJ outline, where Drain connects to both top and bottom metal surfaces for symmetrical thermal path. Its gate threshold voltage of 4.0 V (typ.) and low Qgd/Qg ratio (4.8/14 nC) support robust hard-switching performance in bridge configurations.
The device features integrated body diode with 31 ns reverse recovery time and 40 nC Qrr, enabling efficient synchronous rectification without external Schottky replacement. Its ±20 V VGS rating and 100 V breakdown withstand transient overvoltage in unregulated bus environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Withstands peak DC bus voltages up to 100 V in telecom and industrial isolated converters. |
| RDS(on) | 28 mΩ @ VGS = 10 V - Enables <1.6 W conduction loss at 5.7 A, reducing heat sink requirements. |
| Qg | 14 nC - Supports 500 kHz+ switching in LLC and phase-shifted full-bridge topologies with moderate gate drive. |
| ID (TA = 25°C) | 5.7 A - Sustains continuous load current in compact 1-in² PCB layouts with natural convection cooling. |
| RθJC | 3.0 °C/W - Enables direct heatsink mounting on drain side for sub-60°C junction rise under 3 W dissipation. |
| Package | DirectFET® SJ - 4.8 × 3.7 mm footprint, 0.7 mm height, dual-sided thermal interface compatible with standard SMT reflow. |
Pinout & Package
IRF6645TR1PBF uses a 3-terminal DirectFET® SJ package: Gate (G), Source (S), and Drain (D) are accessed via top-side pads only. The copper substrate serves as the Drain terminal, with Source and Gate routed to dedicated top-side solderable terminals. No through-hole or bottom-side signal pins exist.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Low-impedance gate node requiring <1.0 Ω series resistance to damp ringing; referenced to Source. |
| S | Source return path | Primary current return for both channel and body diode; must be low-inductance connection to ground plane. |
| D | Drain power terminal | Exposed copper substrate serving as high-current drain path and thermal interface; electrically tied to top-side drain pad. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling capability | Thermal resistance reduced by 80% vs. SO-8; enables PCB-integrated heatsinking on both top and bottom layers. |
| Low-profile DirectFET® SJ package | 0.7 mm height preserves vertical clearance in ultra-thin power modules and blade servers. |
| High Cdv/dt immunity | Rated for >50 V/ns dV/dt-prevents false turn-on during fast-switching transitions in half-bridge legs. |
| Optimized for synchronous rectification | Body diode trr = 31 ns and Qrr = 40 nC minimize switching loss and EMI in secondary-side FETs. |
Applications
| Telecom DC-DC Converters | Server VRMs |
|---|---|
|
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom shelf power. IC Role / Device Role / Timing Role: High-side switching element in active-clamp forward topology operating at 300–500 kHz. Use Value: 28 mΩ RDS(on) and 14 nC Qg reduce combined conduction and switching losses to <2.1 W, enabling >95% efficiency at full load. |
Use Scenario: Secondary-side synchronous rectifier in multiphase buck-derived isolated VRM for CPU core supply. IC Role / Device Role / Timing Role: Low-side FET replacing Schottky diode in center-tapped transformer secondary winding. Use Value: Body diode Qrr = 40 nC and VSD = 1.3 V enable zero-voltage switching assist, cutting rectifier loss by 40% vs. discrete diode solution. |
| Industrial Isolated SMPS | Network Equipment Power Modules |
|
Use Scenario: Bridge-leg switch in 24–75 V universal-input isolated flyback used in PLC power supplies. IC Role / Device Role / Timing Role: Main switching transistor in quasi-resonant flyback with valley-switching control. Use Value: 100 V VDSS and 80% lower RθJA allow reliable operation across wide ambient range (−40°C to +85°C) without forced air. |
Use Scenario: Input-stage switch in hot-swap controller auxiliary supply for 1RU network switches. IC Role / Device Role / Timing Role: Inrush-limiting and fault-isolation FET in redundant 12 V input rail. Use Value: 5.7 A ID rating and 3.0 °C/W RθJC support 100% load step response within thermal safety margin during hot-insertion events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6662TR1PBF | Higher RDS(on) (33 mΩ), same VDSS and package; 16 nC Qg | Lower efficiency at high current; suitable for cost-sensitive designs with relaxed thermal budget | Select when BOM cost priority outweighs 15% higher conduction loss at 5 A. |
| SiR626DP-T1-GE3 | Same RDS(on) (28 mΩ), 80 V VDSS, PowerPAK® 1212-8 package; 13 nC Qg | Not rated for 100 V systems; requires layout revision due to different footprint and thermal interface | Choose only if system max VIN ≤ 60 V and board redesign is acceptable. |
Compared with IRF6645TR1PBF, IRF6662TR1PBF trades efficiency for cost in telecom adapters, while SiR626DP-T1-GE3 offers slightly faster switching but sacrifices 20 V voltage headroom-making IRF6645TR1PBF uniquely balanced for 48 V/100 V-class isolated converters demanding both ruggedness and thermal density.
Availability
IRF6645TR1PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial isolated SMPS requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.
Supply support for IRF6645TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The IRF6645TR1PBF belongs to Infineon's DirectFET® power MOSFET product line, engineered specifically for high-frequency, high-efficiency isolated DC-DC conversion in space-constrained infrastructure equipment.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The IRF6645TR1PBF supports 4 A continuous drain current at TA = 70°C with standard 1 in² copper board layout and still-air convection. This rating assumes no forced airflow and accounts for derating due to increased RDS(on) and thermal resistance at elevated ambient temperatures.
Is the DirectFET® SJ package compatible with standard reflow soldering processes?
Yes-the IRF6645TR1PBF is qualified for lead-free reflow up to 260°C peak temperature and complies with IPC-J-STD-020. Application note AN-1035 provides stencil design guidelines, substrate layout rules, and thermal profile recommendations to ensure void-free solder joints and mechanical reliability.
Does this MOSFET require a gate resistor for stability in hard-switching applications?
A gate resistor of 2–10 Ω is recommended to damp high-frequency oscillation caused by parasitic Lg-Ciss resonance. The device's 1.0 Ω intrinsic gate resistance and low Qgd/Qg ratio make it less prone to Miller-induced shoot-through, but external damping remains essential in bridge configurations.
Can the IRF6645TR1PBF be used in avalanche mode for clamping protection?
Yes-it is rated for 29 mJ single-pulse avalanche energy at IAS = 3.4 A. However, repetitive avalanche operation is not specified; designers must limit avalanche events to rare fault conditions and verify energy absorption using the provided EAS vs. ID curve in the datasheet.
IRF6645TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric SJ
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 890 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SJ
IRF6645TR1PBF FAQ
1.How can I place an order for IRF6645TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6645TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6645TR1PBF reliable?
The price and inventory of IRF6645TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6645TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6645TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6645TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6645TR1PBF?
IRF6645TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6645TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6645TR1PBF?
For technical support, including IRF6645TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6645TR1PBF requirements.
6.How does Aetrix verify that IRF6645TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6645TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6645TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6645TR1PBF?
All IRF6645TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6645TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6645TR1PBF part is unused and in its original packaging.
Return procedure for IRF6645TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF6645TR1PBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
