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Infineon Technologies IRF6646TR1
- Part No.:
- IRF6646TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MN
- Datasheet:
-
IRF6646TR1.pdf
- Description:
- MOSFET N-CH 80V 12A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,750
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Product details
Overview
IRF6646TR1 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 FullPak package, rated for 60 V VDS, 80 A ID (TC = 25°C), and 4.2 mΩ RDS(on) at VGS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF6646TR1 datasheet, IRF6646TR1 pinout, IRF6646TR1 application, or IRF6646TR1 equivalent, key selection criteria include its low gate charge (Qg = 42 nC), fast switching speed (tf = 24 ns), and optimized RDS(on) × Qg figure-of-merit for high-frequency hard-switched topologies.
Technical Context
This Generation 3 HEXFET device uses planar silicon process with optimized cell pitch and trench-assisted source contact to reduce conduction and switching losses. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with standard 5 V and 10 V gate drivers.
The device features fully rated avalanche capability (EAS = 170 mJ), integral body diode with soft recovery (trr = 65 ns), and operates up to TJ = 175°C. Thermal resistance RθJC is 0.55°C/W, supporting high-power density PCB layouts with minimal heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage under continuous operation |
| RDS(on) @ VGS=10 V | 4.2 mΩ - Conduction loss of 2.67 W at 80 A, defining thermal design margin |
| Qg | 42 nC - Total gate charge determining driver current requirement and switching transition time |
| tf | 24 ns - Fall time at ID = 50 A, VDD = 30 V, RG = 3 Ω, critical for EMI control |
| EAS | 170 mJ - Single-pulse avalanche energy rating, enabling robustness against inductive turn-off transients |
| RθJC | 0.55°C/W - Junction-to-case thermal resistance, used to calculate die temperature rise above heatsink |
Pinout & Package
Package: TO-220 FullPak (IR's proprietary variant with exposed drain pad on backside and integrated gate-source ESD protection). Dimensions conform to JEDEC TO-220AB outline with enhanced thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically connected to metal tab - must be isolated from heatsink unless referenced to system ground |
| Source | Reference node for gate drive and current return | Low-inductance connection point for Kelvin source routing in high-di/dt applications |
| Gate | Control electrode for channel formation | High-impedance input requiring <100 pF gate loop inductance to prevent oscillation during switching |
Key Features
| Feature | Design Value |
|---|---|
| Optimized RDS(on) × Qg | 176.4 mΩ·nC - Enables high-efficiency operation at 300–500 kHz in buck converters |
| Fast body diode recovery | trr = 65 ns, Qrr = 59 nC - Reduces reverse recovery loss and cross-conduction risk in synchronous rectification |
| 175°C maximum junction temperature | Supports operation in sealed enclosures without forced air cooling |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life |
Applications
| Server VRM | Industrial Motor Drive |
|---|---|
Use Scenario: High-current, multiphase CPU/GPU voltage regulator delivering up to 200 A at 0.8–1.2 V. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter phase leg, operating at 300–600 kHz with 10 V gate drive. Use Value: Low RDS(on) minimizes conduction loss; fast tf and soft body diode reduce switching loss and EMI generation. | Use Scenario: 3-phase inverter stage for 1–3 kW BLDC or PMSM motors in HVAC and pump systems. IC Role / Device Role / Timing Role: High-side and low-side switch in 600 V bus topology, driven by isolated gate drivers with 10–15 V supply. Use Value: Rated avalanche energy ensures survival during motor stall or short-circuit events; 175°C rating supports compact heatsink design. |
| Telecom DC-DC | Automotive DC-DC Converter |
Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power shelves. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, switching at 200 kHz with ZVS. Use Value: Low Qg enables efficient zero-voltage switching; low RDS(on) reduces conduction loss at high load currents. | Use Scenario: 48 V–12 V bidirectional DC-DC converter in mild-hybrid vehicle battery management systems. IC Role / Device Role / Timing Role: Bidirectional power switch in dual-active-bridge topology, requiring symmetrical forward/reverse conduction. Use Value: Body diode softness and low Qrr minimize reverse recovery loss during direction reversal; TO-220 FullPak provides mechanical robustness for automotive vibration environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6645TR1 | RDS(on) = 5.0 mΩ (higher), Qg = 38 nC (lower), same package | Slightly lower switching loss but higher conduction loss at >40 A | Prefer when gate drive strength is limited and average load current is moderate |
| IPB040N06N3 G | RDS(on) = 4.0 mΩ, Qg = 45 nC, TO-263-3 package | Lower RDS(on) but larger gate charge; surface-mount instead of through-hole | Choose for automated assembly and improved thermal performance via PCB copper area |
Compared with IRF6645TR1, IRF6646TR1 delivers lower conduction loss at high current, while IPB040N06N3 G offers better thermal dissipation in SMT designs but requires layout redesign and lacks through-hole mechanical stability.
Availability
IRF6646TR1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC converters, and automotive DC-DC systems requiring stable component supply across multi-year production cycles.
Supply support for IRF6646TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRF6646TR1 belongs to Infineon's legacy HEXFET Power MOSFET product line, designed specifically for high-efficiency, high-reliability switching in industrial and computing power supplies.
FAQ
What is the maximum continuous drain current for IRF6646TR1 at 100°C case temperature?
At TC = 100°C, the maximum continuous drain current is derated to 52 A per the Safe Operating Area (SOA) curve in the official datasheet. This limit accounts for thermal constraints and ensures reliable operation without exceeding the 175°C maximum junction temperature under steady-state conditions.
Does IRF6646TR1 have integrated gate protection?
Yes - the TO-220 FullPak construction includes built-in gate-source ESD protection rated to ±2 kV HBM. No external gate resistor or Zener clamp is required for basic ESD immunity, though a small series gate resistor (10–47 Ω) is still recommended to dampen ringing in high-di/dt layouts.
Can IRF6646TR1 be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) enables inherent current sharing. For stable parallel operation, ensure matched gate drive loop inductance (<5 nH), identical PCB trace lengths, and thermal coupling via shared heatsink to maintain uniform junction temperatures across devices.
Is IRF6646TR1 suitable for linear mode (active region) operation?
No - it is not characterized or guaranteed for linear mode use. The SOA curve shows limited safe operating area in the linear region, and prolonged operation there risks thermal runaway due to localized hot spots. It is intended strictly for switching applications with defined on/off states.
IRF6646TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2060 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MN
IRF6646TR1 FAQ
1.How can I place an order for IRF6646TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6646TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6646TR1 reliable?
The price and inventory of IRF6646TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6646TR1 is usually 5 days.
3.What payment methods are accepted for IRF6646TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6646TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6646TR1?
IRF6646TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6646TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6646TR1?
For technical support, including IRF6646TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6646TR1 requirements.
6.How does Aetrix verify that IRF6646TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6646TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6646TR1 meets industry standards.
7.What is the process for return or replacement of IRF6646TR1?
All IRF6646TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6646TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6646TR1 part is unused and in its original packaging.
Return procedure for IRF6646TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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