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Infineon Technologies IRF6646TR1PBF
- Part No.:
- IRF6646TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MN
- Datasheet:
-
IRF6646TR1PBF.pdf
- Description:
- MOSFET N-CH 80V 12A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:2,299
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Product details
Overview
IRF6646TR1PBF from Infineon Technologies is an N-channel enhancement-mode Power MOSFET in DirectFETTM MN package, optimized for primary-side bridge switches and secondary-side synchronous rectifiers in isolated DC-DC converters. It delivers 7.6 mΩ RDS(on) at VGS = 10 V, 80 V VDSS, 36 nC total gate charge, and supports 7.2 A continuous drain current at TA = 25°C - enabling high-efficiency operation in 36–60 V input telecom and server power supplies.
For engineers reviewing the IRF6646TR1PBF datasheet, IRF6646TR1PBF pinout, IRF6646TR1PBF application, or IRF6646TR1PBF equivalent, key selection criteria include low-profile dual-sided cooling capability (0.7 mm height), 1.4 °C/W RθJC, high dv/dt immunity, and compatibility with standard SMT reflow profiles up to 260°C.
Technical Context
This MOSFET employs HEXFET® silicon on a copper substrate DirectFETTM MN package, enabling top- and bottom-side thermal paths. Its gate threshold voltage is 3.0–4.9 V with negative temperature coefficient (−11 mV/°C), and it features low Qgd/Qg ratio (12/36 nC) for fast switching with reduced Miller effect.
The device is characterized for unclamped inductive switching with 230 mJ single-pulse avalanche energy at IAS = 7.2 A, and exhibits 48 nC reverse recovery charge (Qrr) and 36 ns trr at TJ = 125°C - critical for reliable synchronous rectification in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - supports 48 V ±10% ETSI input range with margin for transient overvoltage |
| RDS(on) | 7.6 mΩ @ VGS = 10 V - enables <1 W conduction loss at 7.2 A, reducing heatsink requirements |
| Qg | 36 nC - determines gate drive power and switching speed in 100–500 kHz isolated converters |
| RθJC | 1.4 °C/W - allows direct thermal interface to heatsink or PCB copper, improving thermal budget by 80% vs SO-8 |
| Qrr | 48 nC - defines body diode recovery loss during synchronous FET turn-on in LLC or phase-shifted full-bridge |
| VGS(th) | 3.8 V typ - ensures robust turn-on with standard 5 V or 10 V gate drivers, avoiding partial enhancement |
| ID (TA=25°C) | 7.2 A - sets maximum continuous output current in compact board space without forced airflow |
Pinout & Package
IRF6646TR1PBF uses the DirectFETTM MN (Medium Size Can, N-Designation) package - a copper-can, top- and bottom-cooled surface-mount structure with 0.7 mm profile and SO-8 footprint compatibility. Drain is connected to both top and bottom metal surfaces; source and gate are soldered to PCB pads on the bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Surface | Drain (D) | Primary thermal and electrical path for high-current drain connection; enables dual-sided cooling |
| Bottom Pad (Center) | Source (S) | Low-inductance source return path; connects directly to PCB ground plane or source node |
| Bottom Pad (Left) | Gate (G) | Control terminal requiring <1 Ω gate resistance to suppress oscillation during fast switching |
| Bottom Pad (Right) | Drain (D) | Secondary drain connection point; used for Kelvin sensing or parallel layout symmetry |
Key Features
| Feature | Design Value |
|---|---|
| DirectFETTM MN packaging | 0.7 mm profile with dual-sided thermal access - reduces RθJA to 12.5 °C/W with clip heatsink |
| Low Qgd/Qg ratio | 33% (12/36 nC) - minimizes Miller-induced turn-off delay and improves hard-switching robustness |
| High dv/dt immunity | Rated per design for >50 V/ns - prevents false turn-on in high-side bridge configurations |
| RoHS-compliant lead-free | Qualified for 260°C reflow - compatible with standard vapor-phase and convection soldering processes |
| Body diode Qrr optimization | 48 nC at 125°C - lowers synchronous rectifier switching loss and EMI in secondary-side applications |
Applications
| Telecom DC-DC Converters | Server VRMs |
|---|---|
Use Scenario: 48 V input, 12 V output isolated half-bridge converter in telecom shelf power systems. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–300 kHz with zero-voltage switching assist. Use Value: 7.6 mΩ RDS(on) and 36 nC Qg enable >95% efficiency at full load while maintaining <85°C case temperature. | Use Scenario: 48 V to 12 V intermediate bus converter feeding multiphase CPU VRMs in data center servers. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in regulated forward or active-clamp forward topology. Use Value: Low Qrr (48 nC) and fast trr (36 ns) reduce body diode conduction loss and improve light-load efficiency. |
| Industrial Isolated Supplies | Optimized Synchronous Rectification |
Use Scenario: 36–60 V input isolated auxiliary supply for PLC I/O modules with strict thermal envelope. IC Role / Device Role / Timing Role: Low-profile primary switch in flyback or forward converter with natural convection cooling. Use Value: Dual-sided cooling and 1.4 °C/W RθJC allow full 7.2 A rating without heatsink on 1-in² Cu board. | Use Scenario: Secondary-side synchronous rectifier in 12 V/24 V output isolated converters for industrial automation. IC Role / Device Role / Timing Role: Fast-turning N-channel FET replacing Schottky diodes in high-current outputs (>10 A). Use Value: 1.3 V VSD body diode forward drop and low RDS(on) cut conduction losses by >40% vs discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6662TR1PBF | Higher VDSS (100 V), same RDS(on) (7.6 mΩ), higher Qg (42 nC) | Better suited for 60 V+ input systems with larger voltage transients | Select when system requires >80 V breakdown margin or operates above 48 V nominal input |
| SiR626DP-T1-GE3 | Same VDSS (80 V), lower RDS(on) (5.2 mΩ), higher Qg (48 nC), PowerPAK® 8x8 package | Requires larger PCB footprint but offers lower conduction loss at high current | Prefer when minimizing I²R loss dominates over gate drive loss and board area is not constrained |
Compared with IRF6646TR1PBF, IRF6662TR1PBF trades higher voltage rating for slightly slower switching, while SiR626DP-T1-GE3 delivers lower on-resistance at the cost of increased gate charge and larger package - making IRF6646TR1PBF optimal for balanced performance in space-constrained 48 V telecom and server converters.
Availability
IRF6646TR1PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server intermediate bus supplies, and industrial isolated auxiliary power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for IRF6646TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap device innovation.
The DirectFETTM product line was engineered specifically for high-frequency, high-efficiency isolated power conversion - prioritizing ultra-low profile, dual-sided thermal management, and SMT compatibility without sacrificing ruggedness or performance.
FAQ
What is the maximum continuous drain current for IRF6646TR1PBF at 70°C ambient?
The IRF6646TR1PBF supports 68 A continuous drain current at TA = 70°C when mounted on a 1 in² copper board with dual-sided cooling and proper thermal interface. This rating assumes VGS = 10 V and accounts for derating due to junction temperature limits (TJ ≤ 150°C) and thermal resistance (RθJA ≈ 20 °C/W under those conditions).
Does IRF6646TR1PBF require a gate resistor for stability in hard-switched topologies?
Yes - a gate resistor of 1–5 Ω is recommended to dampen ringing and prevent parasitic oscillation during fast switching. The device's low gate resistance (1.0 Ω typical) and 36 nC Qg make it sensitive to PCB layout inductance; external series resistance controls dV/dt and ensures clean turn-on/turn-off transitions in bridge configurations.
Can IRF6646TR1PBF be used as a synchronous rectifier in a 12 V output LLC resonant converter?
Yes - its 7.6 mΩ RDS(on), 48 nC Qrr, and 36 ns trr at 125°C make it well-suited for secondary-side synchronous rectification in 12 V LLC designs. The DirectFETTM package's low RθJC (1.4 °C/W) helps maintain low junction temperature despite high RMS currents, and its body diode VSD of 1.3 V ensures safe dead-time operation.
Is IRF6646TR1PBF pin-compatible with standard SO-8 MOSFETs?
No - although it shares the same PCB footprint as SO-8, the DirectFETTM MN package has different terminal assignments: both top and bottom metal surfaces are Drain, while Gate and Source connect only to bottom-side pads. Layout must follow AN-1035 guidelines for stencil design, substrate clearance, and thermal pad routing - not SO-8 land patterns.
IRF6646TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2060 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MN
IRF6646TR1PBF FAQ
1.How can I place an order for IRF6646TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6646TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6646TR1PBF reliable?
The price and inventory of IRF6646TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6646TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6646TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6646TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6646TR1PBF?
IRF6646TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6646TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6646TR1PBF?
For technical support, including IRF6646TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6646TR1PBF requirements.
6.How does Aetrix verify that IRF6646TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6646TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6646TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6646TR1PBF?
All IRF6646TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6646TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6646TR1PBF part is unused and in its original packaging.
Return procedure for IRF6646TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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