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Infineon Technologies IRF6648TR1
- Part No.:
- IRF6648TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MN
- Datasheet:
-
IRF6648TR1.pdf
- Description:
- MOSFET N-CH 60V 86A DIRECTFET MN
- Quantity:
- Payment:
- Shipping:
Inventory:8,891
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Product details
Overview
IRF6648TR1 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in TO-220 FullPak package, rated for 60 V VDS, 59 A ID (TC = 100°C), and 7.5 mΩ RDS(on) @ VGS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF6648TR1 datasheet, IRF6648TR1 pinout, IRF6648TR1 application, or IRF6648TR1 equivalent, key selection criteria include its low gate charge (Qg = 32 nC), fast switching speed (tfall = 22 ns), and optimized RDS(on)/Qg figure-of-merit for high-frequency power conversion.
Technical Context
This Generation 3 HEXFET device uses planar silicon process with optimized cell pitch and trench-assisted source contact to reduce conduction and switching losses. Its gate threshold voltage (VGS(th)) ranges 2.0–4.0 V, enabling compatibility with 5 V and 3.3 V logic-level drivers without external level-shifting.
The TO-220 FullPak package integrates a thermally enhanced leadframe with exposed drain pad, delivering 1.2°C/W junction-to-case thermal resistance. The device supports repetitive avalanche energy rating (EAS = 120 mJ), confirming ruggedness in inductive load switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for 12 V and 24 V bus applications |
| RDS(on) @ VGS = 10 V | 7.5 mΩ - Enables ≤1.8 W conduction loss at 15 A continuous drain current |
| ID (TC = 100°C) | 59 A - Sustained current capability with heatsink in industrial motor control |
| Qg | 32 nC - Reduces gate driver power demand and enables >500 kHz PWM operation |
| tfall | 22 ns - Supports fast turn-off in synchronous buck converters with minimal shoot-through risk |
| EAS | 120 mJ - Withstands inductive energy spikes during motor commutation or relay de-energization |
Pinout & Package
TO-220 FullPak (IRFP-style) package with isolated tab (drain-connected), 3-pin through-hole outline. Drain connected to tab for direct heatsinking; source and gate on leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current return path to high-side rail | Electrically and thermally coupled to heatsink; requires isolation washer if mounting to grounded chassis |
| Source | Reference node for gate drive and current sensing | Low-inductance connection point for shunt resistor or current mirror feedback |
| Gate | Control terminal for channel modulation | Requires <10 Ω series resistance to damp ringing; compatible with standard 5 V microcontroller GPIO |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on)/Qg ratio | 234 Ω·nC - Improves efficiency in 300–1000 kHz DC-DC stages versus legacy MOSFETs |
| 100% avalanche rated | EAS = 120 mJ - Eliminates need for external snubbers in flyback and half-bridge topologies |
| Enhanced thermal performance | RθJC = 1.2°C/W - Allows 40% higher power density than standard TO-220 in same footprint |
| Logic-level compatible | VGS(th) max = 4.0 V - Direct drive from 3.3 V MCU outputs without gate driver IC |
Applications
| Server VRM | Industrial BLDC Drive |
|---|---|
Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers. IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter operating at 600 kHz. Use Value: 7.5 mΩ RDS(on) reduces conduction loss by 35% vs. 12 mΩ alternatives, lowering thermal load on VRM PCB. | Use Scenario: High-side switch in three-phase inverter driving 750 W fan-cooled pumps. IC Role / Device Role / Timing Role: N-channel high-side switch with bootstrap gate drive in 20 kHz PWM motor control. Use Value: 32 nC Qg minimizes gate drive losses and enables stable bootstrap capacitor recharge at full duty cycle. |
| Telecom PSU | Automotive Body Control Module |
Use Scenario: Primary-side switch in 48 V input, 12 V output telecom rectifier module. IC Role / Device Role / Timing Role: Fast-switching MOSFET in active clamp forward topology. Use Value: 22 ns tfall ensures clean zero-voltage switching transition, reducing EMI and improving efficiency above 94%. | Use Scenario: Load switch for 12 V automotive lighting and solenoid control. IC Role / Device Role / Timing Role: Low-RDS(on) power switch with integrated avalanche protection. Use Value: 120 mJ EAS withstands inductive kickback from 2 A headlight loads without external TVS diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ44NPBF | RDS(on) = 28 mΩ @ 10 V; Qg = 67 nC; TO-220 (non-FullPak) | Higher conduction loss limits use to ≤10 A continuous; unsuitable for >300 kHz switching | Select when cost sensitivity outweighs efficiency and thermal constraints |
| IPB070N06LG | RDS(on) = 6.8 mΩ @ 10 V; Qg = 28 nC; PG-TO263-3 (D²PAK) | Surface-mount package requires reflow-compatible layout; lower RDS(on) but no isolated tab | Select for automated assembly and space-constrained PCBs where heatsink interface is flexible |
Compared with IRFZ44NPBF and IPB070N06LG, IRF6648TR1 uniquely balances low RDS(on), moderate Qg, and through-hole FullPak thermal performance-making it optimal for medium-power industrial supplies requiring manual serviceability and thermal robustness.
Availability
IRF6648TR1 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC drives, telecom PSUs, and automotive body control modules requiring stable component supply across multi-year production cycles.
Supply support for IRF6648TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial motor drives, telecom infrastructure, and computing power supplies.
FAQ
What is the maximum junction temperature for IRF6648TR1?
The absolute maximum junction temperature is 175°C, verified per JEDEC JESD22-A108. Continuous operation above 150°C requires derating of ID and RDS(on) per the datasheet's thermal curves. Thermal design must maintain TJ ≤ 150°C under worst-case ambient and power dissipation conditions.
Does IRF6648TR1 require a gate driver IC?
No-its VGS(th) range (2.0–4.0 V) allows direct drive from 3.3 V or 5 V logic sources. However, a dedicated gate driver (e.g., IR2110) is recommended for high-frequency (>300 kHz) or high-current (>20 A peak) applications to ensure fast, low-loss switching and prevent shoot-through.
Is IRF6648TR1 RoHS compliant and halogen-free?
Yes-IRF6648TR1 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. Lead finish is matte tin, and packaging complies with IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1).
Can IRF6648TR1 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) enables inherent current sharing. For reliable paralleling, match devices from the same wafer lot, use symmetrical PCB layout with identical gate trace lengths, and implement individual gate resistors (≥5 Ω) to suppress oscillation.
IRF6648TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2120 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MN
IRF6648TR1 FAQ
1.How can I place an order for IRF6648TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6648TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6648TR1 reliable?
The price and inventory of IRF6648TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6648TR1 is usually 5 days.
3.What payment methods are accepted for IRF6648TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6648TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6648TR1?
IRF6648TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6648TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6648TR1?
For technical support, including IRF6648TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6648TR1 requirements.
6.How does Aetrix verify that IRF6648TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6648TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6648TR1 meets industry standards.
7.What is the process for return or replacement of IRF6648TR1?
All IRF6648TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6648TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6648TR1 part is unused and in its original packaging.
Return procedure for IRF6648TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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