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Infineon Technologies IRF6648TR1PBF
- Part No.:
- IRF6648TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MN
- Datasheet:
-
IRF6648TR1PBF.pdf
- Description:
- MOSFET N-CH 60V 86A DIRECTFET MN
- Quantity:
- Payment:
- Shipping:
Inventory:3,783
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Product details
Overview
IRF6648TR1PBF from Infineon Technologies is an N-channel enhancement-mode Power MOSFET in DirectFET™ MN package, optimized for synchronous rectification in 5–12 VOUT DC-DC converters and primary-side switching in 24 VIN forward converters. It delivers 5.5 mΩ RDS(on) @ 10 VGS, 60 VDSS, ±20 VGS rating, and supports 86 A continuous drain current at TC = 25°C.
For engineers reviewing the IRF6648TR1PBF datasheet, IRF6648TR1PBF pinout, IRF6648TR1PBF application, or IRF6648TR1PBF equivalent, key selection criteria include low-profile thermal performance (0.7 mm height), dual-sided cooling capability, gate charge profile (Qg = 36 nC), and avalanche ruggedness (EAS = 47 mJ).
Technical Context
This MOSFET employs HEXFET® silicon with DirectFET™ MN packaging to achieve ultra-low RDS(on) while maintaining SO-8 footprint compatibility. Its gate threshold voltage (VGS(th) = 4.0 V typ.) and negative temperature coefficient (−11 mV/°C) enable stable turn-on behavior across −40°C to +150°C junction range.
The device features low output capacitance (Coss = 600 pF @ VDS = 25 V), fast switching (tr = 29 ns, tf = 13 ns), and integrated body diode with Qrr = 37 nC and trr = 31 ns - critical for high-frequency synchronous rectification efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 24 V input forward converter primary side and 12 V output synchronous rectifier. |
| RDS(on) | 5.5 mΩ @ 10 VGS, 17 A - Enables <1 W conduction loss at 40 A, critical for high-efficiency power stages. |
| Qg | 36 nC - Low total gate charge reduces driver power and enables efficient operation at >500 kHz switching frequencies. |
| ID (cont) | 86 A @ TC = 25°C - Supports high-current secondary-side rectification without parallel devices in compact layouts. |
| RθJC | 1.4 °C/W - Enables direct heatsink mounting on both top (Drain) and PCB side for 80% lower thermal resistance vs. SO-8. |
| EAS | 47 mJ - Withstands unclamped inductive energy during hard-switching events without failure. |
Pinout & Package
IRF6648TR1PBF uses the DirectFET™ MN (Medium Can, N-Designation) package: surface-mount, double-sided cooling, 0.7 mm profile, SO-8 footprint-compatible outline with exposed Drain on top and bottom. Dimensions per Fig 8 (MN Outline): 6.25 × 4.80 × 0.7 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Drain (D) | High-current power path, thermal interface | Exposed metal pad on top serves as both drain connection and primary heatsink interface for top-side cooling. |
| Bottom Drain (D) | High-current power path, thermal interface | Full-area exposed metal on underside enables PCB copper pour cooling - dual-sided thermal management. |
| Source (S) | Reference node for gate drive and current sensing | Internally connected to substrate; used for Kelvin source sensing in precision synchronous rectifier control. |
| Gate (G) | Control terminal for channel modulation | Low-inductance connection optimized for fast switching; requires <1.0 Ω gate resistor to damp ringing. |
Key Features
| Feature | Design Value |
|---|---|
| DirectFET™ MN packaging | SO-8 footprint with 0.7 mm height enables drop-in replacement in legacy layouts while enabling dual-sided cooling. |
| Synchronous rectification optimization | Low Qrr (37 nC) and fast trr (31 ns) minimize body diode conduction loss in 5–12 V output buck/forward converters. |
| Thermal resistance reduction | RθJC = 1.4 °C/W and RθJA-PCB = 1.0 °C/W allow >80% lower junction-to-ambient rise vs. SO-8 MOSFETs under same power. |
| High-current capability | 86 A continuous drain current at TC = 25°C supports single-device solutions in 100–200 W server VRMs and telecom PSUs. |
Applications
| Server VRM Synchronous Rectifier | Telecom 48 V Input Forward Converter |
|---|---|
|
Use Scenario: Secondary-side synchronous rectification in 12 V output, 100–200 W server voltage regulator modules. IC Role / Device Role / Timing Role: N-channel power switch replacing Schottky diode; driven by dedicated gate controller with precise dead-time control. Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, enabling >95% efficiency at full load with <50°C junction rise. |
Use Scenario: Primary-side main switch in isolated 48 V input, 12 V output forward converter for telecom power supplies. IC Role / Device Role / Timing Role: High-voltage, high-current switching element operating at 200–500 kHz with zero-voltage switching assist. Use Value: 60 V rating and 5.5 mΩ RDS(on) support 24–48 V input ranges while limiting primary-side conduction loss to <1.2 W at 15 A. |
| Industrial 24 V Input DC-DC Module | Automotive ADAS Power Supply |
|
Use Scenario: Primary-side switch in compact 24 V input, 5 V/3.3 V dual-output forward or flyback converters for PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch with integrated avalanche energy handling (EAS = 47 mJ) for robustness against inductive transients. Use Value: Eliminates need for external snubbers in 24 V industrial environments, reducing BOM count and board area by 15%. |
Use Scenario: Synchronous rectifier in 12 V battery-fed 5 V/3.3 V buck converter powering radar and camera ECUs in ADAS systems. IC Role / Device Role / Timing Role: Low-RDS(on) N-MOSFET used in high-side configuration with bootstrap gate drive for compact layout. Use Value: 0.7 mm profile allows placement under ECU shielding; dual-sided cooling maintains <105°C junction temp at 85°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6662TR1PBF | 60 V, 3.2 mΩ @ 10 VGS, higher Qg (48 nC), same DirectFET™ MN package | Better conduction loss but slower switching; suited for <300 kHz applications where RDS(on) dominates efficiency | Select when minimizing conduction loss is prioritized over switching loss in medium-frequency forward converters. |
| SiR626DP-T1-GE3 | 60 V, 4.0 mΩ @ 10 VGS, 30 nC Qg, PowerPAK® SO-8 package (1.6 mm height) | Higher profile limits dual-sided cooling; better gate charge but inferior thermal resistance (RθJC = 2.2 °C/W) | Choose only if existing SO-8 layout cannot accommodate DirectFET™ MN's 0.7 mm height and top-side thermal interface. |
Compared with IRF6648TR1PBF, IRF6662TR1PBF trades higher gate charge for lower RDS(on), while SiR626DP-T1-GE3 sacrifices thermal performance for SO-8 compatibility - making IRF6648TR1PBF optimal for thermally constrained, high-frequency synchronous rectifiers.
Availability
IRF6648TR1PBF is available at Aetrix Electronics and suitable for server VRMs, telecom forward converters, industrial 24 V DC-DC modules, and automotive ADAS power supplies requiring stable component supply and long-term lifecycle support.
Supply support for IRF6648TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This part belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum gate-source voltage rating for IRF6648TR1PBF?
The absolute maximum VGS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10–12 V for optimal RDS(on) and safe margin; gate drivers must clamp at ≤15 V to avoid overstress during transients.
Does IRF6648TR1PBF support dual-sided cooling in production assembly?
Yes - the DirectFET™ MN package exposes Drain metal on both top and bottom surfaces. Standard reflow profiles (JEDEC J-STD-020) and vapor-phase soldering are qualified per AN-1035. Thermal interface material (TIM) on top and PCB copper pour on bottom are required for full benefit.
Can IRF6648TR1PBF be used in avalanche mode for clamping?
Yes - it is rated for single-pulse avalanche energy of 47 mJ (TJ = 25°C, L = 0.082 mH, RG = 25 Ω). Repetitive avalanche is not rated; use only for infrequent fault conditions. Derate EAS linearly above 25°C junction temperature.
Is IRF6648TR1PBF RoHS-compliant and lead-free?
Yes - it is RoHS-compliant and lead-free, qualified for 260°C reflow per JEDEC J-STD-020. The "PbF" suffix confirms compliance. No exemptions are applied; all homogeneous materials meet EU Directive 2011/65/EU requirements.
IRF6648TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2120 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MN
IRF6648TR1PBF FAQ
1.How can I place an order for IRF6648TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6648TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6648TR1PBF reliable?
The price and inventory of IRF6648TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6648TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6648TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6648TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6648TR1PBF?
IRF6648TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6648TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6648TR1PBF?
For technical support, including IRF6648TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6648TR1PBF requirements.
6.How does Aetrix verify that IRF6648TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6648TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6648TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6648TR1PBF?
All IRF6648TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6648TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6648TR1PBF part is unused and in its original packaging.
Return procedure for IRF6648TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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