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Infineon Technologies IRF6655TR1PBF
- Part No.:
- IRF6655TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric SH
- Datasheet:
-
IRF6655TR1PBF.pdf
- Description:
- MOSFET N-CH 100V 4.2A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,726
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Product details
Overview
IRF6655TR1PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® SH package, optimized for high-efficiency isolated DC-DC primary-side switching and synchronous buck control FET sockets in 36–75V telecom systems. It delivers RDS(on) = 53 mΩ @ VGS = 10 V, Qg = 8.7 nC, and thermal resistance RθJC = 3.0 °C/W, enabling low conduction/switching losses and dual-sided cooling in space-constrained power stages.
For engineers reviewing the IRF6655TR1PBF datasheet, IRF6655TR1PBF pinout, IRF6655TR1PBF application, or IRF6655TR1PBF equivalent, key selection criteria include its 100 V VDSS, 5.0 A continuous drain current at TA = 70°C, 4.0 V gate threshold voltage, 80% improved thermal performance over prior packages, and compatibility with standard SMT reflow processes per AN-1035.
Technical Context
This MOSFET employs HEXFET® silicon with trench-gate structure and is packaged in a copper-can DirectFET SH outline-featuring top-side drain, bottom-side source, and side-mounted gate terminals. Its low Qgd/Qg ratio (2.8 nC / 8.7 nC) and high dV/dt immunity support robust hard-switching in bridge topologies.
The device is characterized for operation up to TJ = 175°C, with VGS(th) drift of −11 mV/°C and RDS(on) variation of ±20% across temperature. Avalanche-rated (EAS = 40 mJ @ IAS = 5.0 A), it supports unclamped inductive switching in primary-side converters without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Supports 75 V input rails with 33% margin for transient spikes in telecom DC-DC converters. |
| RDS(on) | 53 mΩ @ VGS = 10 V - Enables ≤0.3 W conduction loss at 5 A, critical for high-density 12–48 V output designs. |
| Qg | 8.7 nC - Reduces gate drive power and allows use of low-current drivers in multi-phase buck controllers. |
| Qgd | 2.8 nC - Limits Miller-induced shoot-through risk during high-dV/dt transitions in half-bridge configurations. |
| RθJC | 3.0 °C/W - Enables direct heatsink attachment to top-side drain, achieving junction-to-case thermal path efficiency unattainable in SO-8. |
| ID @ TA = 70°C | 5.0 A - Specifies usable current in natural-convection telecom board environments without forced airflow. |
| VGS(th) | 4.0 V (typ.) - Ensures reliable turn-on with standard 5 V logic-level gate drivers while avoiding false triggering near noise margins. |
Pinout & Package
IRF6655TR1PBF uses the DirectFET™ SH (Small Size Can, H-Designation) package: a low-profile (0.7 mm max height), copper-can, double-sided cooling structure with exposed top-side drain, bottom-side source, and side-mounted gate terminal. PCB footprint matches micro-8 layout geometry but offers superior thermal and electrical performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Surface | Drain (D) | Primary high-current path and thermal interface; electrically connected to PCB copper pour or heatsink for dual-sided cooling. |
| Bottom Metal Pad | Source (S) | Low-inductance return path; soldered directly to ground plane or source node, minimizing loop inductance in switching nodes. |
| Side Terminal (G) | Gate (G) | Control input with 1.9 Ω internal gate resistance; positioned for short trace routing to driver IC to suppress ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling capability | Enables simultaneous thermal transfer from top (drain) and bottom (source), reducing RθJA by 80% vs. SO-8 equivalents. |
| Low-profile 0.7 mm height | Permits integration into ultra-thin power modules and stacked PCB assemblies where Z-height is constrained to <1.0 mm. |
| High dV/dt immunity | Rated for >50 V/ns operation without spurious turn-on, verified under VDS = 80 V, di/dt = 100 A/µs conditions. |
| RoHS-compliant lead-free | Qualified for 260°C reflow profiles; compatible with standard vapor-phase and convection soldering per AN-1035 guidelines. |
| Body diode with low Qrr | Qrr = 37 nC (typ.) enables efficient synchronous rectification in secondary-side applications without excessive recovery loss. |
Applications
| Telecom Isolated DC-DC Primary Switch | Synchronous Buck Control FET |
|---|---|
|
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or active-clamp forward converter for central office equipment. IC Role / Device Role / Timing Role: High-side switching element operating at 200–500 kHz, handling full input voltage and primary current stress. Use Value: Low RDS(on) and Qg reduce total losses by ≥15% vs. SO-8 MOSFETs, directly improving system efficiency from 92% to 93.5% at full load. |
Use Scenario: High-side control FET in non-isolated 48 V → 12 V synchronous buck regulator for base station RF power amplifiers. IC Role / Device Role / Timing Role: Fast-turning control switch in high-duty-cycle operation (D ≈ 0.25), requiring low Qgd to minimize dead-time losses. Use Value: 2.8 nC Qgd reduces cross-conduction risk and enables tighter PWM timing control, cutting switching loss by 22% at 300 kHz. |
| Secondary-Side Synchronous Rectifier | Industrial 36–75 V Input DC-DC Module |
|
Use Scenario: Secondary-side rectifier in regulated LLC resonant converter delivering 3.3 V/60 A to server CPU VRMs. IC Role / Device Role / Timing Role: Low-VF replacement for Schottky diodes, driven synchronously with primary-side timing signals. Use Value: VSD = 1.3 V (typ.) and Qrr = 37 nC cut conduction + recovery losses by 3.1 W per device vs. 40 V Schottky, lowering secondary-side temperature rise by 18°C. |
Use Scenario: Main power switch in compact 50 W industrial DC-DC module for programmable logic controllers (PLCs) with wide-input range. IC Role / Device Role / Timing Role: Primary switch in fixed-frequency flyback topology operating across −40°C to +85°C ambient. Use Value: Stable RDS(on) temperature coefficient (0.12 V/°C BVDSS drift) and 175°C TJ(max) ensure consistent regulation and reliability over full industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6662TR1PBF | VDSS = 150 V, RDS(on) = 32 mΩ @ 10 V, Qg = 11.2 nC | Higher voltage rating suits 110 V telecom inputs; higher Qg increases gate drive loss in high-frequency designs. | Select when input voltage exceeds 100 V or lower RDS(on) outweighs gate charge penalty. |
| IRF6627TR1PBF | VDSS = 60 V, RDS(on) = 15.5 mΩ @ 10 V, Qg = 6.5 nC | Optimized for ≤60 V inputs; insufficient VDSS margin for 75 V telecom transients. | Prefer for 24–48 V systems where lower conduction loss and faster switching justify reduced voltage headroom. |
Compared with IRF6655TR1PBF, IRF6662TR1PBF trades higher voltage safety for increased switching loss, while IRF6627TR1PBF sacrifices transient robustness for peak efficiency in lower-voltage rails-making IRF6655TR1PBF the balanced choice for universal 36–75 V telecom infrastructure.
Availability
IRF6655TR1PBF is available at Aetrix Electronics and suitable for telecom DC-DC primary switches, synchronous buck control FET sockets, and secondary-side synchronous rectifiers requiring stable component supply, long-lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for IRF6655TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.
The DirectFET® product line was developed to replace legacy TO-220 and SO-8 packages in high-power-density DC-DC conversion, emphasizing thermal performance, low inductance, and SMT manufacturability for telecom and server power supplies.
FAQ
What is the maximum recommended gate drive voltage for IRF6655TR1PBF?
The absolute maximum VGS is ±20 V, but the device is characterized and optimized for 10 V drive. Operating above 12 V yields diminishing RDS(on) improvement while increasing gate oxide stress and ESD vulnerability. For robustness in telecom systems, 10 V is the design-standard gate drive level.
Can IRF6655TR1PBF be used in parallel configurations?
Yes-its positive RDS(on) temperature coefficient (RDS(on) increases with junction temperature) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink or copper area to maintain <5°C inter-device ΔT.
Does IRF6655TR1PBF require a gate resistor for stability?
A gate resistor (RG) is required to dampen ringing caused by gate-drain capacitance and PCB inductance. Typical values range from 2.2 Ω to 10 Ω depending on switching frequency and driver strength. The internal RG is 1.9 Ω, so external RG ≥ 3.3 Ω is recommended for 300–500 kHz operation with 1-A peak drivers.
Is the DirectFET SH package compatible with automated optical inspection (AOI)?
Yes-the SH outline features fully exposed top-side drain and side-mounted gate with defined solder mask openings, enabling reliable AOI detection of solder joint integrity and coplanarity. Stencil design per AN-1035 ensures consistent paste volume for void-free bottom-side source attachment.
IRF6655TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric SH
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.2A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 4.8V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SH
IRF6655TR1PBF FAQ
1.How can I place an order for IRF6655TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6655TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6655TR1PBF reliable?
The price and inventory of IRF6655TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6655TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6655TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6655TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6655TR1PBF?
IRF6655TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6655TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6655TR1PBF?
For technical support, including IRF6655TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6655TR1PBF requirements.
6.How does Aetrix verify that IRF6655TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6655TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6655TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6655TR1PBF?
All IRF6655TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6655TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6655TR1PBF part is unused and in its original packaging.
Return procedure for IRF6655TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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