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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6655TRPBF

Name: IRF6655TRPBF
Brand: Infineon Technologies
SKU: IRF6655TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6655TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric SH

Datasheet:: IRF6655TRPBF.pdf

Description:: MOSFET N-CH 100V 4.2A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:8,069

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Product details

Overview

IRF6655TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel 100V Power MOSFET in DirectFET® SH package, optimized for high-side control FET sockets in 36–75V synchronous buck DC-DC converters and primary-side switches in isolated DC-DC topologies. It delivers R_DS(on) = 53 mΩ @ V_GS = 10 V, Q_g = 8.7 nC, and thermal resistance R_θJC = 3.0 °C/W with dual-sided cooling capability.

For engineers reviewing the IRF6655TRPBF datasheet, IRF6655TRPBF pinout, IRF6655TRPBF application, or IRF6655TRPBF equivalent, this part is selected for low-conduction-loss, high-C_dv/dt-immune switching in telecom power supplies where footprint constraints (<0.7 mm profile), thermal performance, and gate charge efficiency are critical design parameters.

Technical Context

The IRF6655TRPBF uses HEXFET® silicon with a trench-gated planar structure to achieve low R_DS(on) and fast switching. Its gate threshold voltage (V_GS(th) = 4.0 V typ.) ensures robust turn-on under wide input voltage ranges, while its low Q_gd/Q_g ratio (2.8 nC / 8.7 nC) supports high-efficiency hard-switching operation.

Designed for surface-mount assembly on copper PCBs with metalized backplanes, it leverages DirectFET® SH outline geometry for simultaneous top-side (drain) and bottom-side (source) thermal paths. The device exhibits 80% lower junction-to-ambient thermal resistance versus legacy SO-8 packages when dual-cooled per AN-1035 guidelines.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V telecom systems with 20% derating margin
R_DS(on)	53 mΩ @ V_GS = 10 V - enables <1.3 W conduction loss at 5 A continuous drain current
Q_g	8.7 nC - reduces gate drive power and allows use of smaller gate drivers in high-frequency (>500 kHz) converters
Q_gd	2.8 nC - minimizes Miller plateau duration and improves dv/dt immunity during turn-off
R_θJC	3.0 °C/W - enables direct heatsink mounting to drain pad for high-power density thermal management
I_D @ T_C = 25°C	19 A - supports high-current control FET applications without external heatsinking at moderate ambient temps
V_GS(th)	4.0 V typ. - ensures reliable enhancement-mode turn-on across temperature and manufacturing variation

Pinout & Package

IRF6655TRPBF uses the DirectFET® SH (Small Size Can, H-Designation) package - a copper-can, top-drain, bottom-source, side-gate surface-mount construction with 0.7 mm profile and 4.8 × 3.8 mm footprint. Thermal pads on both top (drain) and bottom (source) enable dual-sided cooling.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad (Drain)	High-current output terminal and primary thermal path	Electrically connected to drain; serves as main heat dissipation surface for heatsink attachment
Bottom Copper Substrate (Source)	Power return and secondary thermal path	Low-inductance source connection; soldered directly to PCB ground plane for EMI reduction and thermal spreading
Side Tab (Gate)	Control input	Exposed copper tab on package side; requires controlled-impedance gate trace routing to minimize ringing

Key Features

Feature	Design Value
Dual-sided cooling interface	Enables simultaneous top (drain) and bottom (source) thermal coupling - reduces R_θJA by 80% vs. SO-8 equivalents
Low Q_gd/Q_g ratio (32%)	Improves switching controllability and dv/dt noise immunity in high-side synchronous buck configurations
DirectFET® SH outline compatibility	Fits existing micro-8 PCB footprints and reflow profiles per AN-1035 - no layout redesign required
Body diode t_rr = 31 ns typ.	Reduces reverse recovery losses in synchronous rectification mode, improving secondary-side efficiency
R_DS(on) tempco = +0.12 V/°C	Provides positive temperature coefficient for inherent current sharing in paralleled configurations

Applications

Telecom DC-DC Primary Switch

Synchronous Buck Control FET

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for central office power systems.

IC Role / Device Role / Timing Role: High-voltage, medium-current switching element operating at 250–500 kHz with hard-switched PWM control.

Use Value: Low R_DS(on) and Q_g reduce total switching + conduction losses to <1.8 W, enabling >94% peak efficiency at full load.

Use Scenario: High-side control FET in non-isolated 48 V → 12 V synchronous buck regulator for base station RF power amplifiers.

IC Role / Device Role / Timing Role: Fast-turning, high-C_dv/dt-immune upper switch in high-side topology with bootstrap gate drive.

Use Value: 2.8 nC Q_gd limits Miller-induced shoot-through risk; 53 mΩ R_DS(on) keeps conduction loss below 1.3 W at 5 A.

Secondary-Side Synchronous Rectifier

Isolated DC-DC LLC Resonant Switch

Use Scenario: Secondary-side synchronous rectifier in 48 V input, 5 V/20 A regulated flyback converter for network edge devices.

IC Role / Device Role / Timing Role: Low-V_F body diode and fast-recovery MOSFET used in self-driven or controller-synchronized rectification.

Use Value: 31 ns t_rr and 1.3 V V_SD reduce reverse recovery energy and forward drop losses, improving light-load efficiency by 2.1%.

Use Scenario: Primary-side switch in 48 V input, 380 V bus LLC resonant converter for server PSU front-end stage.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-capable power switch operating at 300–700 kHz with soft switching waveforms.

Use Value: Low C_oss (110 pF) and Q_oss (4.5 nC) minimize capacitive turn-on loss; 100 V rating provides 2× safety margin over 48 V bus.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TRPBF	R_DS(on) = 32 mΩ @ 10 V; Q_g = 12.5 nC; same DirectFET SH package	Higher conduction efficiency but increased gate drive loss; better suited for <300 kHz operation	Select when lowest R_DS(on) dominates over switching loss in fixed-frequency hard-switched designs
SiR626DP-T1-GE3	R_DS(on) = 48 mΩ @ 10 V; Q_g = 10.5 nC; PowerPAK® 8x8 package with single-sided cooling	No dual-sided cooling; higher R_θJA; requires PCB copper area optimization for thermal performance	Select when board-level thermal design favors bottom-side-only cooling and standard SMT process compatibility is prioritized

Compared with IRF6655TRPBF, IRF6662TRPBF trades higher gate charge for lower conduction loss, while SiR626DP-T1-GE3 sacrifices dual-sided thermal performance for broader distributor availability and simplified assembly - making IRF6655TRPBF optimal for space-constrained telecom converters demanding balanced switching/conduction efficiency and superior thermal headroom.

Availability

IRF6655TRPBF is available at Aetrix Electronics and suitable for telecom DC-DC primary switches, synchronous buck control FET sockets, and secondary-side synchronous rectifiers requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF6655TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The DirectFET® product line was developed to overcome thermal and packaging limitations of traditional TO-220 and SO-8 MOSFETs, targeting high-density, high-efficiency power conversion in telecom, server, and industrial SMPS applications.

FAQ

What is the maximum continuous drain current for IRF6655TRPBF at 70°C ambient?

The IRF6655TRPBF supports 4.2 A continuous drain current at T_A = 70°C with standard PCB mounting (1 in² Cu board, still air). This rating assumes proper thermal relief via the DirectFET® SH package's dual-sided cooling and adherence to AN-1035 layout guidelines for substrate copper area and stencil thickness.

Does IRF6655TRPBF require special soldering processes?

No - IRF6655TRPBF is RoHS-compliant and qualified for standard lead-free reflow up to 260°C peak temperature. However, optimal thermal performance requires following Infineon Application Note AN-1035 for stencil design, substrate copper thickness, and post-reflow inspection criteria to ensure full solder joint integrity on both top (drain) and bottom (source) thermal pads.

Can IRF6655TRPBF be used in avalanche-rated circuits?

Yes - the IRF6655TRPBF is rated for 50 mJ single-pulse avalanche energy (E_AS) at I_D = 5.0 A. Its rugged body diode and specified avalanche current (I_AR = 5.0 A) support unclamped inductive switching in protection-critical applications, provided layout minimizes stray inductance and gate drive remains stable during avalanche events.

How does the DirectFET® SH package improve thermal performance over SO-8?

The DirectFET® SH package reduces junction-to-ambient thermal resistance by 80% versus SO-8 through dual-sided cooling: the top copper can (drain) interfaces directly with a heatsink, while the bottom substrate (source) bonds to a thermally enhanced PCB layer. This architecture achieves R_θJA = 12.5 °C/W (vs. ~60 °C/W for SO-8), enabling higher power density without forced airflow.

IRF6655TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric SH

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 62mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 4.8V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 11.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ SH

IRF6655TRPBF FAQ

1.How can I place an order for IRF6655TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6655TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6655TRPBF reliable?

The price and inventory of IRF6655TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6655TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6655TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6655TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6655TRPBF?

IRF6655TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6655TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6655TRPBF?

For technical support, including IRF6655TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6655TRPBF requirements.

6.How does Aetrix verify that IRF6655TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6655TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6655TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6655TRPBF?

All IRF6655TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6655TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6655TRPBF part is unused and in its original packaging.

Return procedure for IRF6655TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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