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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6662TR1PBF

Name: IRF6662TR1PBF
Brand: Infineon Technologies
SKU: IRF6662TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6662TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MZ

Datasheet:: IRF6662TR1PBF.pdf

Description:: MOSFET N-CH 100V 8.3A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:8,010

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Product details

Overview

IRF6662TR1PBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 8.2 A N-channel enhancement-mode Power MOSFET in DirectFET™ MZ package, featuring 17.5 mΩ R_DS(on) at V_GS = 10 V, 22 nC total gate charge, and dual-sided cooling capability. It serves as a primary-side switch in isolated DC-DC converters and synchronous rectifier in secondary-side regulation for telecom (36–75 V input) and high-efficiency power supplies.

For engineers reviewing the IRF6662TR1PBF datasheet, IRF6662TR1PBF pinout, IRF6662TR1PBF application, or IRF6662TR1PBF equivalent, key selection criteria include low conduction loss (17.5 mΩ), high C_dv/dt immunity, 0.7 mm ultra-low profile, thermal resistance of 1.4 °C/W (Junction-to-Case), and compatibility with standard SMT reflow processes.

Technical Context

This MOSFET employs HEXFET® silicon optimized for high-frequency switching in bridge topologies, with gate threshold voltage (V_GS(th)) tightly specified at 3.0–4.9 V and negative temperature coefficient (−9.7 mV/°C). Its output capacitance (C_oss = 11–270 pF, depending on V_DS) and reverse transfer capacitance (C_rss = 61 pF) support fast, low-noise turn-off in hard-switched and resonant converters.

The DirectFET™ MZ package integrates copper substrate and top-side drain connection to enable simultaneous PCB-side and heatsink-side thermal paths-reducing effective thermal resistance by up to 80% versus SO-8 equivalents. The device's unclamped inductive switching rating supports 4.9 A avalanche current with 140 mJ single-pulse energy at T_J = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V maximum - supports 48 V telecom bus with 2× safety margin and withstands transient spikes in isolated flyback/LLC converters.
R_DS(on)	17.5 mΩ @ V_GS = 10 V - enables <1.4 W conduction loss at 8.2 A, critical for >95% efficiency in high-current 12 V/5 V output rails.
Q_g	22 nC typical - balances drive strength and switching loss; compatible with standard gate drivers (e.g., IR2110, UCC27531) without excessive Miller-induced oscillation.
C_oss	11–270 pF (V_DS = 1–80 V) - low output capacitance minimizes turn-off energy and improves light-load efficiency in ZVS designs.
R_θJC	1.4 °C/W - allows direct mounting to heatsink or copper plane, enabling >80 W continuous dissipation with minimal thermal derating.
V_GS(th)	3.9 V typical - ensures robust turn-on with 5 V logic-level gate drivers while avoiding spurious conduction near 0 V.
Q_rr	50 nC typical - low reverse recovery charge reduces body-diode losses during synchronous rectification commutation.

Pinout & Package

IRF6662TR1PBF uses the DirectFET™ MZ package: ultra-low-profile (0.7 mm), metal-can outline with top-side Drain (D), bottom-side Source (S), and side-mounted Gate (G) terminals. The package enables dual-sided cooling and fits standard SO-8 PCB footprints.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top Metal Pad)	High-side power node	Connected directly to PCB copper pour or heatsink; carries full load current and dissipates heat via top surface.
Source (Bottom Metal Pad)	Power return / reference node	Soldered to ground plane; forms low-inductance return path and contributes to thermal conduction through PCB substrate.
Gate (Side Lead)	Control input	Exposed copper lead for SMT reflow; requires <10 Ω series gate resistor to dampen ringing due to low gate-drain capacitance (6.8 nC).

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	385 Ω·nC - delivers best-in-class switching efficiency for 100 V class in telecom and server PSU applications.
Dual-sided thermal interface	1.4 °C/W R_θJC + 1.0 °C/W R_θJ-PCB - enables thermal management flexibility without requiring dedicated heatsinks.
High C_dv/dt immunity	Rated >50 V/ns - suppresses false turn-on in high-dV/dt half-bridge environments (e.g., LLC primary switches).
Optimized for synchronous rectification	Q_rr = 50 nC, V_SD = 1.3 V - reduces body-diode conduction loss and improves light-load efficiency in secondary-side FETs.
Lead-free & RoHS-compliant	Qualified for 260°C reflow - compatible with modern Pb-free assembly lines without reliability degradation.

Applications

Telecom DC-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V input, 12 V/50 A isolated forward converter for central office equipment.

IC Role / Device Role / Timing Role: High-side switching element in active-clamp forward topology operating at 250–500 kHz.

Use Value: 17.5 mΩ R_DS(on) and 22 nC Q_g reduce combined conduction and switching losses to <1.8 W, enabling >94% full-load efficiency.

Use Scenario: Synchronous rectifier in secondary-side of 12 V → 1.2 V VRM for CPU power delivery.

IC Role / Device Role / Timing Role: Low-side FET in multiphase buck converter with 1 MHz switching frequency.

Use Value: Low Q_rr (50 nC) and fast trr (34 ns) minimize dead-time losses and improve transient response under dynamic load steps.

Industrial Isolated SMPS

Medical Power Modules

Use Scenario: Bridge-leg switch in 24–48 V input, 24 V output full-bridge DC-DC module for PLC power rails.

IC Role / Device Role / Timing Role: Hard-switched N-channel FET in primary H-bridge with gate drive referenced to floating source.

Use Value: 100 V V_DS rating and 140 mJ E_AS ensure reliable operation during line surges and short-circuit events.

Use Scenario: Isolation barrier switch in 24 V input, 5 V/3 A medical-grade AC-DC adapter meeting IEC 60601 creepage requirements.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with reinforced isolation.

Use Value: 0.7 mm profile enables compact transformer placement and meets strict height constraints (<12 mm) in portable medical enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency 100 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP60R190C7	600 V Si MOSFET, 190 mΩ, TO-220FP package, higher R_DS(on), no dual-sided cooling	Designed for offline AC-DC PFC stages, not telecom DC-DC primaries	Select only if 600 V breakdown is required; unsuitable for 48 V systems due to excessive conduction loss.
Vishay SiR626DP	100 V, 15.5 mΩ, PowerPAK® 8×8, 20 nC Q_g, similar R_DS(on) but higher profile (1.05 mm)	Compatible with same gate drivers and PCB layout, but lacks top-side thermal path	Prefer when board space permits taller profile and thermal path is PCB-only; avoid where dual cooling is mandatory.

Compared with IPP60R190C7 and SiR626DP, IRF6662TR1PBF uniquely combines 100 V rating, sub-18 mΩ on-resistance, 22 nC gate charge, and 0.7 mm dual-cooled packaging-making it optimal for space-constrained, high-efficiency telecom and server DC-DC converters where thermal headroom is limited.

Availability

IRF6662TR1PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server power supplies, and industrial isolated SMPS requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IRF6662TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF6662TR1PBF belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for high-frequency, high-efficiency isolated DC-DC conversion in telecom, datacenter, and industrial power systems where thermal density and switching loss are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6662TR1PBF supports 6.6 A continuous drain current at T_A = 70°C with surface mounting on a 1 in² copper board (steady state), per datasheet Figure 1 and Absolute Maximum Ratings table. This rating assumes no forced airflow and accounts for thermal derating due to ambient rise and PCB thermal resistance.

Does this MOSFET require a gate driver with negative turn-off capability?

No. The IRF6662TR1PBF has a gate threshold voltage of 3.9 V (typical) and does not require negative gate drive. A standard 0–10 V or 0–12 V gate driver (e.g., IR2110, LM5113) suffices. However, a 5–10 Ω series gate resistor is recommended to control dV/dt and suppress ringing caused by its low Q_gd/Q_gs ratio.

Can IRF6662TR1PBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and individual gate resistors to prevent oscillation. Thermal coupling between devices must be minimized to avoid thermal runaway.

Is the DirectFET™ MZ package compatible with automated optical inspection (AOI)?

Yes. The MZ outline features exposed top-side Drain and side-mounted Gate leads with defined solder mask openings and IPC-compliant stencil design guidelines (per AN-1035). Its flat, coplanar geometry and absence of hidden solder joints allow full AOI coverage for void detection, solder volume, and alignment verification.

IRF6662TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MZ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 8.3A (Ta), 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 8.2A, 10V

Vgs(th) (Max) @ Id:: 4.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MZ

IRF6662TR1PBF FAQ

1.How can I place an order for IRF6662TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6662TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6662TR1PBF reliable?

The price and inventory of IRF6662TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6662TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6662TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6662TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6662TR1PBF?

IRF6662TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6662TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6662TR1PBF?

For technical support, including IRF6662TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6662TR1PBF requirements.

6.How does Aetrix verify that IRF6662TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6662TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6662TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6662TR1PBF?

All IRF6662TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6662TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6662TR1PBF part is unused and in its original packaging.

Return procedure for IRF6662TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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