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Infineon Technologies IRF6665
- Part No.:
- IRF6665
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric SH
- Datasheet:
-
IRF6665.pdf
- Description:
- MOSFET N-CH 100V 4.2A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:9,794
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Product details
Overview
IRF6665 from Infineon Technologies (formerly International Rectifier) is a 100 V, 19 A N-channel enhancement-mode MOSFET in DirectFET™ SH package, optimized for Class-D audio amplifier output stages. It delivers 53 mΩ RDS(on) at VGS = 10 V, 8.7 nC total gate charge, and 37 nC body diode reverse recovery charge, enabling high-efficiency switching with low THD and EMI in compact, heatsink-free 8 Ω amplifier designs.
For engineers reviewing the IRF6665 datasheet, IRF6665 pinout, IRF6665 application, or IRF6665 equivalent, key selection criteria include its low-stray-inductance DirectFET™ package, dual-sided cooling capability, 100 W/channel capability without heatsink, and Class-D–specific optimization of Qg, Qrr, and RDS(on).
Technical Context
The IRF6665 employs trench-gate silicon technology with optimized gate oxide and channel geometry to minimize conduction and switching losses simultaneously. Its internal gate resistance (1.9 Ω typ.) and low Ciss/Coss ratio support clean 400 kHz switching in half-bridge Class-D topologies under ±45 V bus conditions.
Designed for unclamped inductive switching, it sustains 5.0 A avalanche current with 50 mJ single-pulse energy rating. The integral body diode exhibits 31 ns reverse recovery time and 1.3 V forward voltage at 5 A, critical for minimizing dead-time distortion and shoot-through risk in high-fidelity audio output stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports ±45 V Class-D bus rails with 10% margin for voltage transients |
| RDS(on) @ 10 V | 53 mΩ typ. - enables ≤100 W/channel into 8 Ω without heatsink at 25°C ambient |
| Qg | 8.7 nC typ. - reduces gate drive power loss and improves THD at 400 kHz switching |
| Qrr | 37 nC typ. - minimizes body diode commutation loss and associated EMI in hard-switched bridges |
| RθJC | 3.0 °C/W - enables efficient thermal transfer via direct drain-to-heatsink mounting |
| Package | DirectFET™ SH - surface-mount, dual-sided cooling, 0.83 mm height, compatible with standard SMT reflow |
| Body Diode VSD | 1.3 V max @ 5 A - ensures low forward conduction loss during synchronous rectification phases |
Pinout & Package
IRF6665 uses the DirectFET™ SH outline: a copper substrate-based, leadless, double-sided cooling package with exposed drain on both top and bottom surfaces. No external leads - terminals are soldered directly to PCB pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Drain (D) | Main power output terminal | Exposed copper pad - primary heat path to top-side heatsink or thermal plane |
| Bottom Drain (D) | Main power return terminal | Identical exposed copper pad - enables simultaneous top/bottom thermal interface for <3.0 °C/W RθJC |
| Source (S) | Power return reference | Soldered to source trace/pour - defines local ground reference for gate drive loop |
| Gate (G) | Switching control input | Small-area pad - requires tight layout to minimize Lg and prevent oscillation at 400 kHz |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/Qrr ratio | 8.7 nC / 37 nC - balances fast turn-on with controlled diode recovery to reduce THD below 0.01% |
| DirectFET™ low-inductance structure | Stray inductance <0.5 nH - suppresses VDS ringing during 100 A/µs dI/dt transitions |
| Dual-sided cooling interface | Drain accessible on both sides - allows thermal coupling to top and bottom PCB copper, reducing RθJA to 12.5 °C/W |
| Optimized body diode | 31 ns trr, 1.3 V VSD - enables zero-voltage switching assist and reduces cross-conduction loss |
Applications
| High-Fidelity Home Audio Amplifiers | Automotive Infotainment Power Stages |
|---|---|
Use Scenario: 2×100 W stereo Class-D amplifier module for premium AV receivers, operating at 400 kHz with ±45 V rails. IC Role / Device Role / Timing Role: Output stage MOSFET in half-bridge configuration, switching audio PWM waveform with sub-10 ns timing precision. Use Value: 53 mΩ RDS(on) and 8.7 nC Qg enable >93% efficiency at full power, eliminating need for heatsinks and reducing board area by 35%. | Use Scenario: 4-channel Class-D amplifier in automotive head unit, meeting AEC-Q101 temperature cycling and vibration requirements. IC Role / Device Role / Timing Role: High-side/low-side switch in bridge-tied load (BTL) output stage, rated for 150°C junction operation. Use Value: Dual-sided cooling and 3.0 °C/W RθJC maintain TJ <125°C under continuous 50 W/channel load in sealed enclosure. |
| Professional Sound System Modules | Active Speaker Integrated Amplifiers |
Use Scenario: 500 W peak Class-D output stage in powered line array cabinet, requiring low EMI for RF-sensitive wireless microphone environments. IC Role / Device Role / Timing Role: Primary switching device in interleaved two-phase topology, handling 100 A peak pulsed current. Use Value: Low stray inductance (<0.5 nH) and 37 nC Qrr suppress 100 MHz ringing, reducing conducted EMI by 12 dBμV over SO-8 alternatives. | Use Scenario: Compact 20 W × 2 active bookshelf speaker with integrated DSP and amplifier, constrained to 12 mm total height. IC Role / Device Role / Timing Role: Final-stage power switch in monolithic Class-D IC companion circuit, driven by integrated gate driver. Use Value: 0.83 mm profile and dual-sided thermal interface allow full power dissipation within ultra-low-profile mechanical envelope. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Class-D audio MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRF6675 | Higher RDS(on) (62 mΩ), same Qg (8.7 nC), identical DirectFET™ SH package | Lower power density - suitable for cost-sensitive 50 W/channel designs where thermal margin is relaxed | Select when BOM cost priority outweighs 10% efficiency gain and thermal footprint reduction |
| ON Semiconductor NTMFS4C09N | Lower voltage rating (80 V), lower RDS(on) (4.5 mΩ), different SO-8FL package with higher RθJA (58 °C/W) | Not suitable for ±45 V bus - limited to ≤36 V systems; requires heatsink above 25 W | Choose only for lower-voltage portable audio systems where board space permits larger thermal solution |
Compared with IRF6665, IRF6675 trades 17% higher conduction loss for marginal cost savings, while NTMFS4C09N offers superior RDS(on) but fails to meet 100 V bus requirement and lacks dual-sided cooling - making IRF6665 the sole fit for high-power, heatsink-free, high-reliability Class-D amplifiers.
Availability
IRF6665 is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, automotive infotainment power stages, and professional sound system modules requiring stable component supply across multi-year production cycles.
Supply support for IRF6665 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with core expertise in high-efficiency power devices.
The DirectFET™ MOSFET product line was engineered specifically for high-frequency, high-efficiency switching in audio, computing, and telecom power stages - prioritizing low parasitic inductance, dual thermal paths, and Class-D–optimized dynamic parameters.
FAQ
What is the maximum continuous drain current for IRF6665 at 70°C ambient?
The IRF6665 supports 10 A continuous drain current at TA = 70°C with proper PCB copper area (1 in² Cu), per datasheet derating curve. This reflects thermal limitation-not silicon capability-as RθJA rises to 20 °C/W above 25°C ambient, limiting power dissipation to ~34 W without forced cooling.
Does IRF6665 require a gate resistor for Class-D operation?
Yes - a 6 Ω external gate resistor is recommended (per Fig. 16 test circuit) to dampen high-frequency oscillation caused by interaction between 1.9 Ω internal gate resistance and PCB trace inductance. Omitting it risks gate ringing exceeding ±20 V, risking device failure during 400 kHz switching.
Can IRF6665 be used in synchronous rectification topologies?
No - the IRF6665 is a single N-channel MOSFET intended for half-bridge high-side or low-side switching, not synchronous rectification. Its body diode is optimized for Class-D commutation, not bidirectional conduction; use complementary P/N pairs or dedicated SR controllers for true synchronous rectification.
Is IRF6665 RoHS compliant and halogen-free?
Yes - the IRF6665 is RoHS compliant and contains no lead or brominated flame retardants, as confirmed in the official datasheet (page 1, "RoHS compliant containing no lead or bromide"). It meets JEDEC J-STD-609A Class 1 for moisture sensitivity and qualifies for standard vapor-phase and convection reflow profiles.
IRF6665 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- DirectFET™ Isometric SH
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.2A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SH
IRF6665 FAQ
1.How can I place an order for IRF6665 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6665 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6665 reliable?
The price and inventory of IRF6665 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6665 is usually 5 days.
3.What payment methods are accepted for IRF6665?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6665 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6665?
IRF6665 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6665 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6665?
For technical support, including IRF6665 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6665 requirements.
6.How does Aetrix verify that IRF6665 is sourced from the original manufacturer or authorized distributors?
All IRF6665 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6665 meets industry standards.
7.What is the process for return or replacement of IRF6665?
All IRF6665 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6665, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6665 part is unused and in its original packaging.
Return procedure for IRF6665:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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