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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6665TR1PBF

Name: IRF6665TR1PBF
Brand: Infineon Technologies
SKU: IRF6665TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6665TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric SH

Datasheet:: IRF6665TR1PBF.pdf

Description:: MOSFET N-CH 100V 4.2A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6665TR1PBF from Infineon Technologies is a 100 V, 19 A N-channel enhancement-mode MOSFET in DirectFET™ SH package, optimized for Class-D audio amplifier output stages. It delivers 53 mΩ R_DS(on) at V_GS = 10 V, 8.7 nC total gate charge, and 37 nC body diode reverse recovery charge - enabling high efficiency, low THD, and reduced EMI in compact, heatsink-free 100 W/channel (8 Ω) designs.

For engineers reviewing the IRF6665TR1PBF datasheet, IRF6665TR1PBF pinout, IRF6665TR1PBF application, or IRF6665TR1PBF equivalent, key selection criteria include its low stray inductance DirectFET™ packaging, dual-sided cooling capability, optimized Q_g/Q_rr trade-off for switching fidelity, and compatibility with standard SMT reflow profiles up to 260 °C.

Technical Context

This MOSFET employs trench-gate silicon technology with tailored body diode dynamics to minimize reverse recovery loss and voltage ringing during hard-switching transitions typical of Class-D half-bridge topologies. Its 1.9 Ω internal gate resistance and 29 pF Crss suppress oscillation while maintaining fast 2.8 ns rise time and 4.3 ns fall time under 6 Ω external gate drive.

The DirectFET™ SH outline integrates drain as the top-side thermal path and source/gate on the bottom substrate, enabling simultaneous PCB-side conduction cooling and heatsink-side convection cooling. Thermal resistance is specified at R_θJC = 3.0 °C/W (junction-to-case) and R_θJ-PCB = 1.4 °C/W (junction-to-PCB), verified using double-sided mounting per AN-1035.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports ±45 V bus operation with 10 % margin for voltage transients in Class-D amplifiers
R_DS(on) @ V_GS = 10 V	53 mΩ typ. - enables <100 W/channel into 8 Ω without heatsink at 25 °C ambient
Q_g	8.7 nC typ. - reduces gate drive power loss and improves THD by minimizing switching transition time dispersion
Q_rr	37 nC typ. - lowers body diode conduction loss and EMI during dead-time commutation
R_θJ-PCB	1.4 °C/W - allows >70 % of heat to be extracted through PCB copper when mounted per AN-1035 layout guidelines
C_iss	530 pF - balances input capacitance for stable gate drive impedance matching with common 5–10 Ω drivers
t_f	4.3 ns - ensures clean turn-off in 400 kHz switching applications with minimal shoot-through risk

Pinout & Package

IRF6665TR1PBF uses the DirectFET™ SH (Small Size Can, H-Designation) package - a top-side-drain, bottom-side-source/gate metal-can structure with no leads, designed for double-sided thermal management and ultra-low parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-current power path and primary thermal interface for heatsink-side cooling
Bottom Substrate Pad (Center)	Source (S)	Low-impedance return path and secondary thermal interface to PCB copper pour
Bottom Substrate Pad (Edge)	Gate (G)	Control terminal with integrated 1.9 Ω internal resistance - minimizes gate oscillation without external series resistor

Key Features

Feature	Design Value
DirectFET™ SH packaging	Reduces package stray inductance by >50 % vs. SO-8, cutting voltage ringing amplitude and EMI emissions in Class-D output filters
Optimized Q_g/Q_rr ratio	Enables simultaneous THD <0.01 % and efficiency >90 % at 100 W/channel (8 Ω) with 400 kHz switching
Dual-sided cooling architecture	Supports 3.0 °C/W junction-to-case and 1.4 °C/W junction-to-PCB paths - eliminates need for mechanical heatsinks in many consumer audio designs
RoHS-compliant lead-free construction	Qualified for 260 °C reflow per JEDEC J-STD-020 - compatible with standard vapor-phase and convection soldering processes

Applications

Home Theater Audio Amplifier

Automotive Infotainment System

Use Scenario: 2×100 W stereo Class-D amplifier module in compact AV receiver chassis with no forced air or heatsink.

IC Role / Device Role / Timing Role: High-side/low-side synchronous rectifier switch in half-bridge output stage, switching at 400 kHz with 50 % duty cycle.

Use Value: 53 mΩ R_DS(on) and 1.4 °C/W R_θJ-PCB enable full-rated output within 70 °C case temperature limit using only 2 oz copper PCB area.

Use Scenario: Integrated 4-channel amplifier in automotive head unit with space-constrained metal enclosure and wide ambient range (−40 to +85 °C).

IC Role / Device Role / Timing Role: Output stage switch handling transient peak currents up to 34 A (pulsed source) during bass-heavy audio passages.

Use Value: 37 nC Q_rr and soft-recovery body diode reduce electromagnetic interference coupling into CAN bus and analog sensor lines.

Professional Stage Monitor

Soundbar Power Module

Use Scenario: 500 W peak Class-D powered monitor with active thermal derating based on real-time junction temperature monitoring.

IC Role / Device Role / Timing Role: Primary power switch operating in asymmetric PWM mode with variable dead time controlled by gate driver IC.

Use Value: 100 V V_DS rating and 19 A continuous current support safe operation under 60 V rail conditions with 20 % overvoltage margin.

Use Scenario: Slim-profile soundbar requiring silent operation, zero heatsink volume, and surface-mount assembly on single-layer thermal pad.

IC Role / Device Role / Timing Role: Half-bridge leg switch in BTL configuration driving 4 Ω load with 200 kHz carrier frequency.

Use Value: 8.7 nC Q_g and 2.8 ns t_r allow precise edge control to suppress ultrasonic noise and improve DAC-to-speaker signal integrity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TR1PBF	Lower 100 V rating, 45 mΩ R_DS(on), higher 12.5 nC Q_g, same DirectFET™ SH package	Better conduction loss but slower switching - suited for lower-frequency (<200 kHz) or higher-current designs where THD priority is relaxed	Select when optimizing for maximum efficiency at mid-band frequencies rather than wideband linearity
STW48N65M5	650 V Si-MOSFET in TO-247, 48 mΩ R_DS(on), 120 nC Q_g, no optimized Q_rr	Designed for SMPS, not audio - lacks low-Q_rr body diode and low-inductance packaging required for Class-D fidelity	Not recommended for Class-D audio; only consider if legacy board reuse mandates TO-247 footprint and voltage margin >100 V is mandatory

Compared with IRF6665TR1PBF, the IRF6662TR1PBF trades faster switching for lower conduction loss, while the STW48N65M5 introduces excessive gate charge and package inductance - making both less suitable for high-fidelity, high-frequency Class-D output stages where EMI and THD are critical.

Availability

IRF6665TR1PBF is available at Aetrix Electronics and suitable for home theater receivers, automotive infotainment systems, professional stage monitors, and soundbar power modules requiring stable component supply and long-term production continuity.

Supply support for IRF6665TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The DirectFET™ MOSFET product line was developed specifically for high-frequency, high-efficiency switching applications including Class-D audio, server VRMs, and telecom DC-DC converters - emphasizing low parasitics, dual thermal paths, and application-optimized dynamic parameters.

FAQ

What is the maximum continuous drain current for IRF6665TR1PBF at 70 °C ambient?

The IRF6665TR1PBF supports 11 A continuous drain current at T_A = 70 °C with proper PCB copper area per AN-1035. This rating assumes double-sided cooling, 1 in² 2 oz copper on FR-4, and no external heatsink. Derating follows the linear factor of 0.017 W/°C above 70 °C ambient.

Can IRF6665TR1PBF be used in synchronous rectification topologies?

Yes - its low 53 mΩ R_DS(on), 37 nC Q_rr, and soft-recovery body diode make it suitable for synchronous rectification in Class-D output stages and resonant DC-DC converters. Gate drive must provide adequate negative turn-off bias (−5 V) to ensure reliable body diode blocking during dead time.

Is the DirectFET™ SH package compatible with standard reflow soldering equipment?

Yes - the IRF6665TR1PBF is qualified for lead-free reflow up to 260 °C peak temperature per JEDEC J-STD-020. Successful assembly requires adherence to AN-1035 guidelines: specific stencil aperture design (0.11 mm thickness, 0.25 mm openings), controlled ramp rates, and preheat profiles to avoid substrate warpage or voiding.

How does the internal gate resistance affect gate driver selection?

The 1.9 Ω internal gate resistance dampens high-frequency resonance between gate driver output impedance and MOSFET input capacitance. This allows use of lower-cost gate drivers without external series resistors - though a 2–5 Ω external resistor is still recommended for fine-tuning turn-on speed and EMI in sensitive audio layouts.

IRF6665TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric SH

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.2A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 62mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ SH

IRF6665TR1PBF FAQ

1.How can I place an order for IRF6665TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6665TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6665TR1PBF reliable?

The price and inventory of IRF6665TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6665TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6665TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6665TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6665TR1PBF?

IRF6665TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6665TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6665TR1PBF?

For technical support, including IRF6665TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6665TR1PBF requirements.

6.How does Aetrix verify that IRF6665TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6665TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6665TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6665TR1PBF?

All IRF6665TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6665TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6665TR1PBF part is unused and in its original packaging.

Return procedure for IRF6665TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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