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Infineon Technologies IRF6665TRPBF
- Part No.:
- IRF6665TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric SH
- Datasheet:
-
IRF6665TRPBF.pdf
- Description:
- MOSFET N-CH 100V 4.2A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,422
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Product details
Overview
IRF6665TRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 19 A N-channel DirectFET™ MOSFET optimized for Class-D audio amplifier output stages. It delivers 53 mΩ RDS(on) at VGS = 10 V, 8.7 nC total gate charge, and 37 nC body-diode reverse recovery charge, enabling high-efficiency, low-THD, low-EMI operation in compact, heatsink-free 100 W/channel 8 Ω designs.
For engineers reviewing the IRF6665TRPBF datasheet, IRF6665TRPBF pinout, IRF6665TRPBF application, or IRF6665TRPBF equivalent, key selection criteria include its DirectFET™ SH-outline package thermal performance, dual-sided cooling capability, low Qrr/Qg trade-off for switching fidelity, and compatibility with standard SMT reflow profiles up to 260 °C.
Technical Context
This MOSFET employs trench-gate silicon optimized for fast, soft-body-diode recovery (trr = 31 ns, Qrr = 37 nC) and minimal gate-drain charge (Qgd = 2.8 nC), directly reducing voltage overshoot and EMI in hard-switched Class-D half-bridges. Its 1.9 Ω internal gate resistance damps oscillation without external gate resistors in many layouts.
The DirectFET™ SH-outline package integrates drain as top-side metal pad and source/gate on bottom, enabling simultaneous PCB-side conduction and heatsink-side cooling. Thermal resistance from junction to PCB is 1.4 °C/W, and junction-to-case is 3.0 °C/W - critical for thermally constrained audio modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports ±45 V bus rails common in high-fidelity Class-D amplifiers |
| RDS(on) @ 10 V | 53 mΩ typ. - enables 100 W/channel into 8 Ω without heatsink at 25 °C ambient |
| Qg | 8.7 nC typ. - reduces gate drive power loss and improves THD at 400 kHz switching |
| Qrr | 37 nC typ. - minimizes body-diode commutation loss and associated EMI spikes |
| RθJC | 3.0 °C/W - allows direct thermal coupling to heatsink via top-side drain metal |
| RθJ-PCB | 1.4 °C/W - supports high-power density layout with copper-filled thermal pads on PCB |
| Package | DirectFET™ SH-outline - surface-mount, dual-sided cooling, RoHS-compliant, 260 °C reflow rated |
Pinout & Package
The IRF6665TRPBF uses the DirectFET™ SH-outline package: a leadless, top-side-drain, bottom-source/gate configuration with exposed metal pads for dual thermal paths. Dimensions: 4.8 mm × 3.85 mm × 0.9 mm (L × W × H), with 0.65 mm pitch between gate and source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DRAIN (Top Metal Pad) | High-current power output node | Primary heat transfer path; connects directly to heatsink or copper pour; carries full load current |
| SOURCE (Bottom Pad) | Power return / reference node | Low-inductance connection to ground plane; forms low-impedance source loop with gate driver |
| GATE (Bottom Pad) | Switching control input | Isolated from drain by dielectric layer; requires <10 Ω series resistance for stability in high-dV/dt environments |
Key Features
| Feature | Design Value |
|---|---|
| Optimized body-diode recovery | trr = 31 ns, Qrr = 37 nC - reduces cross-conduction loss and audible switching noise in half-bridge outputs |
| Low gate-drain charge | Qgd = 2.8 nC - suppresses Miller-induced shoot-through and improves hard-switching robustness |
| Dual-sided cooling | Junction-to-PCB (1.4 °C/W) + junction-to-case (3.0 °C/W) - enables >100 W dissipation in space-constrained enclosures |
| DirectFET™ low-stray inductance | Sub-1 nH source loop inductance - limits voltage ringing during 100 A/µs transitions, easing EMI filtering |
Applications
| Home Audio Amplifiers | Professional Audio Modules |
|---|---|
Use Scenario: Compact stereo amplifier delivering 100 W per channel into 8 Ω loads with no external heatsink. IC Role / Device Role / Timing Role: Output-stage power switch in half-bridge topology operating at 350–400 kHz. Use Value: Enables fanless, aluminum-chassis designs with THD+N < 0.05% at full power due to low Qrr and stable RDS(on) over temperature. | Use Scenario: High-density multi-channel PA module for stage monitors and powered speakers. IC Role / Device Role / Timing Role: High-efficiency switching element in paralleled half-bridge outputs with synchronous rectification. Use Value: Supports 200 W/channel in 1U rack units via dual-sided cooling and 1.4 °C/W RθJ-PCB, eliminating thermal throttling. |
| Automotive Infotainment | Active Speaker Systems |
Use Scenario: 4-channel Class-D amplifier in automotive head unit with 12 V supply and 4 Ω speaker loads. IC Role / Device Role / Timing Role: Low-RDS(on) output FET handling peak currents >25 A with fast transient response. Use Value: Maintains >90% efficiency at 12 V input while meeting CISPR-25 radiated emissions limits due to low Qgd and minimized ringing. | Use Scenario: Integrated DSP + amplifier module inside compact active studio monitor cabinets. IC Role / Device Role / Timing Role: Thermally managed output device mounted directly to aluminum baffle with top-side heatsinking. Use Value: Achieves 110 dB dynamic range by suppressing switching artifacts via soft-recovery body diode and 3.0 °C/W RθJC. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Class-D audio MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6662TRPBF | Lower VDS (75 V), higher RDS(on) (62 mΩ), same Qg/Qrr | Suitable only for ≤±35 V bus systems; limited to 75 W/channel into 8 Ω | Select when cost sensitivity outweighs voltage margin and thermal headroom |
| STW48N65M5 | Higher VDS (650 V), TO-247 package, 45 mΩ RDS(on), but Qrr = 125 nC | Designed for industrial SMPS, not audio; excessive Qrr degrades THD and increases EMI filter size | Avoid for Class-D audio unless bus voltage exceeds 400 V and THD < 0.1% is not required |
Compared with IRF6662TRPBF, the IRF6665TRPBF provides 25 V higher breakdown margin and 9 mΩ lower on-resistance for improved thermal headroom in 100 W designs; versus STW48N65M5, it trades off voltage rating for 3.4× lower Qrr, enabling cleaner audio switching and smaller passive components.
Availability
IRF6665TRPBF is available at Aetrix Electronics and suitable for home audio amplifiers, professional PA modules, automotive infotainment systems, and active speaker systems requiring stable component supply and long-term manufacturability.
Supply support for IRF6665TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-efficiency power semiconductors.
The DirectFET™ MOSFET product line was engineered specifically for high-frequency, high-efficiency switching in audio, computing, and telecom power stages - prioritizing low parasitic inductance, dual thermal paths, and optimized body-diode dynamics.
FAQ
What is the maximum continuous drain current for IRF6665TRPBF at 70°C ambient?
The IRF6665TRPBF supports 10 A continuous drain current at TA = 70°C with proper PCB copper area (1 in² Cu), based on its 58 °C/W junction-to-ambient thermal resistance and 150°C maximum junction temperature. This derating ensures reliable operation in enclosed audio chassis without forced airflow.
Can IRF6665TRPBF be used in synchronous rectification configurations?
No - the IRF6665TRPBF is a unidirectional N-channel MOSFET with an integral body diode optimized for Class-D freewheeling, not bidirectional conduction. Its gate threshold voltage (3.0–5.0 V) and lack of dedicated synchronous control logic make it unsuitable for SR controller-driven topologies.
Does IRF6665TRPBF require a gate resistor in Class-D half-bridge layouts?
Yes - although it features 1.9 Ω internal gate resistance, a 4.7–10 Ω external series gate resistor is recommended to damp high-frequency oscillation caused by PCB trace inductance and driver output impedance, especially when driving >10 A peak load currents.
How does the DirectFET™ SH-outline improve thermal performance over SO-8 packages?
The DirectFET™ SH-outline eliminates bond wires and exposes the drain die directly to the top metal pad, reducing junction-to-case thermal resistance to 3.0 °C/W (vs. ~6.5 °C/W in SO-8). Combined with bottom-side source/ground conduction, it achieves 1.4 °C/W junction-to-PCB - enabling >2× higher power density in thermally constrained layouts.
IRF6665TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric SH
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.2A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SH
IRF6665TRPBF FAQ
1.How can I place an order for IRF6665TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6665TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6665TRPBF reliable?
The price and inventory of IRF6665TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6665TRPBF is usually 5 days.
3.What payment methods are accepted for IRF6665TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6665TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6665TRPBF?
IRF6665TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6665TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6665TRPBF?
For technical support, including IRF6665TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6665TRPBF requirements.
6.How does Aetrix verify that IRF6665TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF6665TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6665TRPBF meets industry standards.
7.What is the process for return or replacement of IRF6665TRPBF?
All IRF6665TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6665TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6665TRPBF part is unused and in its original packaging.
Return procedure for IRF6665TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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