My Inquiry
My Account
Infineon Technologies IRF6668TR1
- Part No.:
- IRF6668TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MZ
- Datasheet:
-
IRF6668TR1.pdf
- Description:
- MOSFET N-CH 80V 55A DIRECTFET MZ
- Quantity:
- Payment:
- Shipping:
Inventory:7,084
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF6668TR1 from Infineon Technologies (formerly International Rectifier) is a 80V N-channel DirectFET™ Power MOSFET optimized for primary-side switching and secondary-side synchronous rectification in isolated DC-DC converters operating from 36–60V input. It delivers 12 mΩ RDS(on) at VGS = 10 V, 22 nC total gate charge, and 1.4 °C/W junction-to-case thermal resistance in an ultra-low-profile (0.7 mm) MZ-outline DirectFET package.
For engineers reviewing the IRF6668TR1 datasheet, IRF6668TR1 pinout, IRF6668TR1 application, or IRF6668TR1 equivalent, key selection criteria include its dual-sided cooling capability, high Cdv/dt immunity (76 pF Crss), low conduction loss in bridge topologies, and compatibility with standard SMT reflow profiles up to 260°C.
Technical Context
The IRF6668TR1 employs HEXFET® silicon in a copper-can DirectFET MZ package with top-side drain and bottom-side source terminals, enabling simultaneous PCB and heatsink cooling. Its gate threshold voltage (4.0 V typ.) and negative temperature coefficient of RDS(on) support stable parallel operation in high-current power stages.
This device is engineered for unclamped inductive switching (EAS = 100 mJ) and exhibits fast switching dynamics (tr = 13 ns, tf = 23 ns) with low Qgd/Qgs2 ratio (7.8 nC / 1.6 nC), minimizing Miller-induced turn-off delay in hard-switched bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - supports 48 V ±10% input systems with margin against transients |
| RDS(on) | 12 mΩ @ VGS = 10 V - enables <1.5 W conduction loss at 12 A continuous drain current |
| Qg | 22 nC - determines gate driver power requirement and switching speed trade-off |
| Crss | 76 pF - contributes to high dv/dt immunity and reduced Miller feedback during switching |
| RθJC | 1.4 °C/W - allows direct thermal path to heatsink or copper plane for >80% thermal improvement vs. SO-8 |
| ID @ TC = 25°C | 80 A - defines maximum continuous current under ideal case-cooling conditions |
| VGS(th) | 4.0 V typ. - ensures robust turn-on with standard 5 V or 12 V gate drivers |
Pinout & Package
The IRF6668TR1 uses the DirectFET MZ outline: a copper-can, top-drain/bottom-source surface-mount package measuring 6.3 × 4.9 × 0.7 mm (L × W × H), with no leads and dual thermal interfaces.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary high-side connection and main thermal interface to heatsink or top-layer copper |
| Bottom Exposed Pad | Source (S) | Low-side return path and secondary thermal interface to PCB ground plane |
| Side Terminal (Single) | Gate (G) | Control input with low-inductance routing; requires <1.0 Ω series resistance for oscillation suppression |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling architecture | Enables simultaneous heat extraction from top (heatsink) and bottom (PCB), reducing RθJA to 12.5 °C/W with clip heatsink |
| Ultra-low profile (0.7 mm) | Preserves board height budget in space-constrained telecom and server power supplies |
| High avalanche energy rating | EAS = 100 mJ supports reliable operation under unclamped inductive switching in LLC and phase-shifted full-bridge topologies |
| Lead-free & RoHS-compliant | Qualified for 260°C reflow, eliminating Pb-based solder compatibility concerns in modern assembly lines |
Applications
| Telecom DC-DC Brick | Server VRM Primary Switch |
|---|---|
Use Scenario: 48 V input, 12 V output isolated DC-DC converter in NEBS-compliant telecom equipment. IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or phase-shifted full-bridge topology. Use Value: 12 mΩ RDS(on) and 22 nC Qg enable >95% efficiency at 500 kHz switching while maintaining junction temperature <110°C under forced air. | Use Scenario: 48 V intermediate bus converter feeding multiphase CPU/GPU VRMs in AI accelerators. IC Role / Device Role / Timing Role: High-frequency primary switch with fast turn-off (tf = 23 ns) to minimize dead-time losses. Use Value: Low Crss (76 pF) reduces voltage-dependent gate drive loss and improves timing predictability across load transients. |
| Industrial Isolated PSU | EV Onboard Charger Auxiliary Stage |
Use Scenario: 36–60 V input, 24 V output isolated supply for PLC I/O modules with extended temperature range. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in regulated forward converter with adaptive gate control. Use Value: Body diode VSD = 1.3 V and Qrr = 40 nC allow efficient zero-voltage switching (ZVS) recovery without external snubbers. | Use Scenario: Auxiliary 12 V/300 W isolated supply in bidirectional OBC, operating across -40°C to +125°C ambient. IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge topology handling 100% duty cycle during reverse power flow. Use Value: Stable RDS(on) temperature coefficient (0.097 V/°C) and 150°C TJ(max) ensure consistent performance over full automotive temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency isolated DC-DC switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRF6662TR1PBF | 60 V VDSS, 14 mΩ RDS(on), same MZ package | Limited to ≤42 V input systems; lower avalanche rating (EAS = 60 mJ) | Select when input voltage is capped at 36–42 V and cost sensitivity outweighs 80 V margin. |
| Vishay SiR626DP | 80 V VDSS, 13.5 mΩ RDS(on), PowerPAK® SO-8 package (1.6 mm height) | Single-sided cooling only; higher RθJA (35 °C/W) limits power density | Choose if legacy SO-8 layout reuse is mandatory and thermal headroom exceeds 15°C. |
Compared with IRF6662TR1PBF and SiR626DP, the IRF6668TR1 uniquely combines 80 V rating, sub-13 mΩ on-resistance, and dual-sided cooling-enabling 20% higher power density in 1U telecom bricks and improved reliability in thermally constrained EV auxiliary supplies.
Availability
IRF6668TR1 is available at Aetrix Electronics and suitable for telecom DC-DC bricks, server VRM primary stages, and industrial isolated PSUs requiring stable component supply and long-term manufacturability.
Supply support for IRF6668TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.
The DirectFET product line was developed to replace SO-8 and DPAK MOSFETs in high-frequency, high-efficiency power conversion-targeting telecom, server, and industrial isolated DC-DC applications where thermal performance and footprint are critical.
FAQ
What is the maximum recommended gate resistor value for IRF6668TR1 in a 500 kHz phase-shifted full-bridge?
A 6.2 Ω gate resistor is validated per application note AN-1035 for 500 kHz operation, balancing switching loss (reduced by lower RG) and EMI/noise (controlled by higher RG). Values below 4.7 Ω risk ringing due to low gate impedance (1.0 Ω internal), while above 10 Ω increase ton/toff beyond 50 ns, degrading ZVS margin.
Can IRF6668TR1 be used in parallel without current-sharing resistors?
Yes-its negative RDS(on) temperature coefficient (0.097 V/°C) and matched threshold voltage (±0.9 V) enable inherent thermal current sharing. Parallel operation requires symmetrical PCB layout, identical gate drive paths, and shared thermal interface; derating to 70% of total rated current is recommended for reliability.
Does the IRF6668TR1 require special stencil design for solder paste application?
Yes-DirectFET MZ requires a 0.127 mm (5 mil) thick stencil with 75% area ratio apertures per AN-1035. The bottom source pad demands 80% fill coverage, while the top drain pad uses a stepped stencil or selective dispensing to avoid paste bleed onto gate terminals during reflow.
Is the body diode of IRF6668TR1 suitable for synchronous rectification without external control?
No-the body diode has 1.3 V forward drop and 34–51 ns reverse recovery time, making it unsuitable for unassisted synchronous rectification. It must be actively driven with complementary gate signals timed to overlap the diode conduction period, using the Qrr = 40 nC and trr = 34 ns values to set dead-time margins.
IRF6668TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MZ
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 31 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1320 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MZ
IRF6668TR1 FAQ
1.How can I place an order for IRF6668TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6668TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6668TR1 reliable?
The price and inventory of IRF6668TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6668TR1 is usually 5 days.
3.What payment methods are accepted for IRF6668TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6668TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6668TR1?
IRF6668TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6668TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6668TR1?
For technical support, including IRF6668TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6668TR1 requirements.
6.How does Aetrix verify that IRF6668TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6668TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6668TR1 meets industry standards.
7.What is the process for return or replacement of IRF6668TR1?
All IRF6668TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6668TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6668TR1 part is unused and in its original packaging.
Return procedure for IRF6668TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF6668TR1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
