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Infineon Technologies IRF6674TR1PBF
- Part No.:
- IRF6674TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MZ
- Datasheet:
-
IRF6674TR1PBF.pdf
- Description:
- MOSFET N-CH 60V 13.4A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,721
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Product details
Overview
IRF6674TR1PBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 13.4 A N-channel enhancement-mode Power MOSFET in DirectFET® MZ package, optimized for primary-side switching in isolated DC-DC converters with 36–60 V input. It delivers 9.0 mΩ RDS(on) at VGS = 10 V, 24 nC total gate charge, and dual-sided cooling capability for high-efficiency forward/push-pull topologies.
For engineers reviewing the IRF6674TR1PBF datasheet, IRF6674TR1PBF pinout, IRF6674TR1PBF application, or IRF6674TR1PBF equivalent, key selection criteria include its low conduction loss, high dV/dt immunity, compatibility with surface-mount reflow up to 260°C, and thermal resistance of 1.4°C/W (Junction-to-Case) enabling high-power-density converter designs.
Technical Context
This MOSFET employs HEXFET® silicon with DirectFET™ packaging-eliminating bond wires and enabling top-side (Drain) and bottom-side (Source/Gate) thermal paths. Its gate threshold voltage is 4.0 V (typ), with negative temperature coefficient (−11 mV/°C), supporting stable operation across −40°C to +150°C junction range.
The device features 8.3 nC gate-to-drain charge (Qgd) and 10.2 nC switch charge (Qsw), enabling fast, low-loss switching in hard-switched isolated topologies. Its 105 pF reverse transfer capacitance (Crss) and 390 pF output capacitance (Coss) support high-frequency operation while maintaining robust avalanche ruggedness (EAS = 400 mJ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V max - supports 48 V nominal bus with 20% transient margin in telecom/server power supplies |
| RDS(on) | 9.0 mΩ @ VGS = 10 V - reduces conduction loss to <0.8 W at 13.4 A, critical for >95% efficiency targets |
| Qg | 24 nC - enables efficient gate drive with standard 1–2 A peak drivers at 300–500 kHz switching |
| Qgd | 8.3 nC - minimizes Miller plateau duration, improving turn-off controllability in high-dV/dt environments |
| RθJC | 1.4 °C/W - allows >60 W dissipation with modest heatsinking when using dual-sided cooling |
| EAS | 400 mJ - sustains unclamped inductive switching stress without failure in primary-side snubberless designs |
Pinout & Package
IRF6674TR1PBF uses the DirectFET® MZ outline-a copper-can, double-sided thermal package with exposed Drain on top and Source/Gate terminals on bottom. Footprint matches Micro8 but with only 0.7 mm height, enabling ultra-low-profile board layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Surface | Drain (D) | Primary high-side current path and main thermal interface; soldered directly to heatsink or copper plane |
| Bottom Left Pad | Source (S) | Low-side return path; electrically and thermally connected to PCB ground plane |
| Bottom Right Pad | Gate (G) | Control terminal; requires low-inductance routing to minimize ringing during fast switching |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Enables simultaneous top (Drain-to-heatsink) and bottom (Source-to-PCB) heat extraction, reducing RθJA by up to 80% vs. SO-8 |
| High Cdv/dt immunity | Rated for >50 V/ns - prevents false turn-on in high-speed isolated converters with fast transformer edge rates |
| Low Qgd/Qg ratio | 0.35 - improves switching controllability and reduces risk of shoot-through in synchronous rectification |
| RoHS-compliant lead-free | Qualified for 260°C reflow - compatible with standard SMT assembly without special process deviation |
Applications
| Telecom DC-DC Converters | Server VRMs |
|---|---|
Use Scenario: Primary-side switch in 48 V input forward converter delivering 12 V/100 A to server CPU rails. IC Role / Device Role / Timing Role: High-side power switch operating at 300–400 kHz with zero-voltage switching assistance. Use Value: 9.0 mΩ RDS(on) and 1.4°C/W RθJC enable <1.2 W conduction loss and <75°C case temperature under full load. |
Use Scenario: Main switch in multiphase buck converter for AI accelerator GPU power delivery. IC Role / Device Role / Timing Role: Fast-switching, low-Qgd FET synchronized with controller's PWM signal to minimize dead-time losses. Use Value: 8.3 nC Qgd and 10.2 nC Qsw reduce switching energy to <15 μJ per cycle at 600 kHz, lowering thermal stress. |
| Industrial 36–60 V PSUs | EV Onboard Chargers (OBC) |
Use Scenario: Isolated auxiliary supply in programmable logic controller (PLC) backplane with wide input range. IC Role / Device Role / Timing Role: Primary switch in push-pull topology handling 36–60 V input transients and 150% overload surges. Use Value: 400 mJ EAS rating withstands repeated unclamped inductive spikes without derating or snubbers. |
Use Scenario: Primary-side switch in bidirectional CLLC resonant converter for 6.6 kW OBC. IC Role / Device Role / Timing Role: Hard-switched transition element during soft-start and fault recovery phases. Use Value: Dual-sided cooling maintains TJ < 125°C during 10-second 150% overload, meeting ISO 6469 thermal safety requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency isolated converter primary switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRF6662TR1PBF | 60 V, 15.5 A, RDS(on) = 7.0 mΩ @ 10 V, Qg = 28 nC, same MZ package | Lower RDS(on) but higher gate charge increases driver loss at >400 kHz | Prefer for lower conduction loss priority in <350 kHz designs with adequate gate drive strength |
| Vishay SiR626DP | 60 V, 12.5 A, RDS(on) = 9.5 mΩ @ 10 V, Qg = 22 nC, PowerPAK® SO-8 | SO-8 footprint limits thermal performance (RθJC = 3.6°C/W); no dual-sided cooling | Choose only if legacy layout reuse is mandatory and power density < 0.8 W/cm² is acceptable |
Compared with IRF6674TR1PBF, the IRF6662TR1PBF offers lower conduction loss but demands stronger gate drive, while the SiR626DP sacrifices thermal capability for board-level compatibility-making the IRF6674TR1PBF optimal for new high-density, high-reliability isolated converter designs.
Availability
IRF6674TR1PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial 36–60 V power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IRF6674TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF6674TR1PBF belongs to Infineon's DirectFET® Power MOSFET product line-engineered specifically for high-frequency, high-efficiency isolated power conversion where thermal density and switching loss are system-critical constraints.
FAQ
What is the maximum continuous drain current at 70°C ambient?
The IRF6674TR1PBF supports 13.4 A continuous drain current at TA = 70°C with VGS = 10 V, provided the PCB layout provides ≥1 in² copper area per side and thermal vias under Source pads. This rating assumes natural convection cooling without forced airflow or external heatsinks.
Is the device suitable for synchronous rectification on the secondary side?
No-the IRF6674TR1PBF is optimized for primary-side high-side switching, not secondary-side synchronous rectification. Its body diode recovery time (trr = 32–48 ns) and Qrr (36–54 nC) are not minimized for low-loss freewheeling; dedicated SR FETs like IRF6642 offer faster diode recovery and lower Qrr.
Does the DirectFET MZ package require special stencil design for reflow?
Yes-AN-1035 specifies a 0.127 mm (5 mil) stencil thickness with 1:1 aperture ratio for the top Drain pad and 0.102 mm (4 mil) for bottom Source/Gate pads. Underfill is not required, but solder paste volume must be precisely controlled to avoid voiding and ensure mechanical reliability under thermal cycling.
What is the safe operating area (SOA) limitation at 100°C case temperature?
At TC = 100°C, the IRF6674TR1PBF's SOA is limited by RDS(on) to ≤8.5 A at VDS = 30 V in linear mode (10 ms pulse). For switching applications, the 134 A pulsed drain current rating applies only for tp ≤ 400 μs and duty cycle ≤ 2%, with peak TJ held below 150°C.
IRF6674TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MZ
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.4A (Ta), 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 13.4A, 10V
- Vgs(th) (Max) @ Id:
- 4.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MZ
IRF6674TR1PBF FAQ
1.How can I place an order for IRF6674TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6674TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6674TR1PBF reliable?
The price and inventory of IRF6674TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6674TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6674TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6674TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6674TR1PBF?
IRF6674TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6674TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6674TR1PBF?
For technical support, including IRF6674TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6674TR1PBF requirements.
6.How does Aetrix verify that IRF6674TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6674TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6674TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6674TR1PBF?
All IRF6674TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6674TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6674TR1PBF part is unused and in its original packaging.
Return procedure for IRF6674TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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