Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6678

Name: IRF6678
Brand: Infineon Technologies
SKU: IRF6678
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF6678

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6678.pdf

Description:: MOSFET N-CH 30V 30A DIRECTFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,930

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF6678 from Infineon Technologies (formerly International Rectifier) is a 30 V, 1.7 mΩ @ 10 V, N-channel DirectFET™ power MOSFET optimized for synchronous buck converters in CPU core DC-DC applications. It delivers ultra-low R_DS(on), 43 nC total gate charge, and 1.0–2.2 Ω gate resistance in a low-profile (0.7 mm), dual-sided cooling MX-outline package. Its design targets high-frequency switching with minimized conduction and switching losses in 12 V input bus systems.

For engineers reviewing the IRF6678 datasheet, IRF6678 pinout, IRF6678 application, or IRF6678 equivalent, key selection criteria include R_DS(on) at 4.5 V (2.3 mΩ), Q_gd/Q_gs2 ratio (15 nC / 4.0 nC), thermal resistance R_θJC (1.4 °C/W), body diode reverse recovery charge (46 nC), and compatibility with vapor-phase reflow per AN-1035.

Technical Context

The IRF6678 employs trench-gate HEXFET® silicon in a copper-can DirectFET™ MX package, enabling drain-source current flow through top and bottom metal surfaces for dual-sided thermal path optimization. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (∆V_GS(th)/∆T_J = −6.3 mV/°C) support stable parallel operation in high-current SyncFET sockets.

Designed specifically for 12 V input synchronous buck converters, it balances low R_DS(on) and low Q_g to reduce both conduction loss (I²R) and switching loss (½ × Q_g × V_GS × f). The ultra-low package inductance (<1 nH) minimizes voltage overshoot during hard switching at >1 MHz frequencies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 12 V bus systems with margin for transient spikes
R_DS(on) @ 10 V	1.7 mΩ - Enables ≤3 W conduction loss at 30 A continuous drain current
R_DS(on) @ 4.5 V	2.3 mΩ - Supports logic-level gate drive in low-voltage control ICs
Q_g total	43 nC - Determines gate driver power requirement and switching speed at given V_GS
Q_gd	15 nC - Governs Miller plateau duration and dv/dt immunity during turn-off
R_θJC	1.4 °C/W - Enables efficient heat extraction via case-mounted heatsink or PCB copper
Q_rr	46 nC - Defines body diode recovery energy loss during dead-time conduction

Pinout & Package

IRF6678 uses the DirectFET™ MX outline: a copper-can, top-drain, bottom-source surface-mount package with no leads. Dimensions are 6.30 × 4.93 × 0.70 mm (L × W × H); thermal interface is made via both top (Drain) and bottom (Source) metal surfaces.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-side switching node; thermally coupled to heatsink or chassis ground
Bottom Metal Pad	Source (S)	Low-side return path; electrically and thermally connected to PCB ground plane
Side Terminal (Left)	Gate (G)	Control input; requires low-inductance routing to minimize ringing during fast switching
Side Terminal (Right)	Source (S)	Secondary source connection; reduces package loop inductance and improves current sharing

Key Features

Feature	Design Value
Dual-sided cooling	Enables simultaneous thermal transfer from top (Drain) and bottom (Source), reducing R_θJA by 80% vs. SO-8 equivalents
Ultra-low package inductance	<1 nH - Minimizes voltage overshoot and EMI in high-di/dt (>100 A/µs) synchronous rectification
Optimized for SyncFET socket	Low Q_gd/Q_g ratio (35%) and 1.8 V V_GS(th) ensure reliable turn-on with standard controller gate drivers
Body diode with low Q_rr	46 nC reverse recovery charge - Reduces dead-time loss and cross-conduction risk in high-frequency buck stages
SO-8 footprint compatibility	Same PCB land pattern as SO-8 - Allows drop-in upgrade of legacy designs without layout revision

Applications

Server CPU Core VRM

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V at up to 300 A to modern x86 and ARM server processors.

IC Role / Device Role / Timing Role: Low-side SyncFET switch operating at 300–600 kHz with precise dead-time control.

Use Value: 1.7 mΩ R_DS(on) and 43 nC Q_g enable >95% efficiency at full load while maintaining thermal headroom on dense PCBs.

Use Scenario: Compact, high-density power stage for discrete GPU VRMs requiring rapid transient response and minimal footprint.

IC Role / Device Role / Timing Role: High-frequency (≥1 MHz) high-side or low-side switch in 3–6 phase interleaved topology.

Use Value: Dual-sided cooling and 0.7 mm profile allow integration into thermally constrained graphics card modules without external heatsinks.

AI Accelerator Board Power

High-Efficiency Telecom DC-DC

Use Scenario: Point-of-load regulator powering ASICs/FPGAs in AI training hardware with dynamic current demands exceeding 500 A peak.

IC Role / Device Role / Timing Role: Parallel-configured low-side MOSFET in multiphase buck with active current balancing.

Use Value: Negative V_GS(th) tempco and low R_DS(on) drift ensure stable current sharing across paralleled devices at junction temperatures up to 150°C.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V telecom DC-DC converters targeting >97% efficiency and 80 PLUS Titanium compliance.

IC Role / Device Role / Timing Role: Low-loss secondary switch replacing Schottky diodes in forward or LLC topologies.

Use Value: 2.3 mΩ R_DS(on) @ 4.5 V enables direct drive from LLC controller outputs, eliminating gate driver ICs and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency synchronous buck MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRF6662	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 32 nC; same MX package	Higher R_DS(on) but lower gate charge - better for higher-frequency, lower-current phases	Select when prioritizing switching loss over conduction loss in sub-100 A phases
Vishay SiR626DP	R_DS(on) = 1.6 mΩ @ 10 V; Q_g = 48 nC; PowerPAK® SO-8 package	Lower R_DS(on) but higher Q_g and single-sided cooling - less effective thermal management above 100 A	Select only if board layout prohibits DirectFET mounting or requires SO-8 footprint compliance

Compared with IRF6678, IRF6662 trades 0.5 mΩ higher on-resistance for 11 nC lower gate charge-favoring high-frequency light-load efficiency-while SiR626DP offers marginally lower R_DS(on) but lacks dual-sided cooling, limiting sustained current capability in thermally dense layouts.

Availability

IRF6678 is available at Aetrix Electronics and suitable for server CPU VRMs, AI accelerator power delivery, and telecom DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer channels.

Supply support for IRF6678 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF6678 belongs to Infineon's DirectFET™ power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where thermal performance and switching speed are critical.

FAQ

What is the maximum continuous drain current for IRF6678 at 70°C ambient?

The IRF6678 supports 150 A continuous drain current at T_A = 70°C when mounted on a 1 in² copper board per datasheet conditions. This rating assumes proper PCB copper area, solder joint integrity, and adherence to AN-1035 assembly guidelines for DirectFET™ packages.

Can IRF6678 be used in parallel configurations?

Yes-its negative gate threshold voltage temperature coefficient (−6.3 mV/°C) and low R_DS(on) drift with temperature enable stable current sharing across paralleled units without external ballasting resistors, provided layout symmetry and gate drive matching are maintained.

Is IRF6678 RoHS compliant and halogen-free?

Yes-the IRF6678 meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21, with lead-free matte tin plating on all terminals and compliant packaging materials per Infineon's material declarations.

What is the recommended gate resistor value for 500 kHz operation?

A 2.2 Ω gate resistor is recommended for 500 kHz operation to balance switching speed (minimizing Q_sw loss) and gate drive stability (suppressing oscillation), based on measured t_d(off) = 27 ns and Q_gd = 15 nC in typical evaluation circuits.

IRF6678 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5640 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6678 FAQ

1.How can I place an order for IRF6678 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6678 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6678 reliable?

The price and inventory of IRF6678 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6678 is usually 5 days.

3.What payment methods are accepted for IRF6678?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6678 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6678?

IRF6678 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6678 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6678?

For technical support, including IRF6678 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6678 requirements.

6.How does Aetrix verify that IRF6678 is sourced from the original manufacturer or authorized distributors?

All IRF6678 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6678 meets industry standards.

7.What is the process for return or replacement of IRF6678?

All IRF6678 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6678, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6678 part is unused and in its original packaging.

Return procedure for IRF6678:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…