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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6678TR1PBF

Name: IRF6678TR1PBF
Brand: Infineon Technologies
SKU: IRF6678TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6678TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6678TR1PBF.pdf

Description:: MOSFET N-CH 30V 30A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6678TR1PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in TO-247 package, rated for 60 V V_DS, 110 A I_D (T_C = 25°C), and 3.2 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters and motor drives.

For engineers reviewing the IRF6678TR1PBF datasheet, IRF6678TR1PBF pinout, IRF6678TR1PBF application, or IRF6678TR1PBF equivalent, key selection criteria include its low gate charge (Q_g = 69 nC), fast switching speed (t_f = 22 ns), and optimized R_DS(on) × Q_g figure-of-merit for high-frequency power stages.

Technical Context

This Generation 3 HEXFET device uses planar silicon process with optimized cell pitch and trench-assisted source contact to reduce conduction and switching losses. Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling compatibility with standard 5 V and 10 V gate drivers.

The MOSFET features avalanche-rated ruggedness (E_AS = 270 mJ at T_J = 25°C), integral body diode with soft recovery (t_rr = 65 ns), and specified SOA for both linear and pulse operation up to 10 ms.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V bus systems and automotive 36 V nominal applications.
R_DS(on) max	3.2 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 110 A, critical for high-current POL converters.
I_D (T_C = 25°C)	110 A - Continuous drain current rating under heatsink-cooled conditions, supporting high-power motor phase legs.
Q_g	69 nC - Total gate charge determining driver strength requirement; enables efficient 500 kHz–1 MHz switching.
t_f	22 ns - Fast fall time reduces switching transition losses in hard-switched topologies.
E_AS	270 mJ - Single-pulse avalanche energy rating confirms robustness against inductive turn-off stress.

Pinout & Package

TO-247AC package (3-pin, straight lead, non-isolated). Standard mounting via center tab (drain-connected).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source connection in precision current monitoring designs.
Gate	Control terminal	High-impedance input requiring <10 Ω series resistance to suppress ringing during fast edge transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	221 mΩ·nC - Optimized for high-frequency synchronous buck converters where conduction + switching loss trade-off dominates efficiency.
100% UIS tested	Each unit validated for unclamped inductive switching reliability - eliminates field failure risk in motor control H-bridges.
Enhanced dv/dt immunity	Rated for 4.5 V/ns - prevents false turn-on in high-di/dt environments like BLDC inverter leg commutation.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - supports standard reflow profiles without baking.

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Point-of-load (POL) converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in 300–600 kHz multiphase buck stage.

Use Value: 3.2 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 5 mΩ devices, directly improving 12 V → 1 V conversion efficiency.

Use Scenario: Half-bridge leg in 3 kW servo amplifier driving permanent magnet synchronous motor.

IC Role / Device Role / Timing Role: High-side switch with 110 A peak current capability per phase.

Use Value: 270 mJ E_AS rating ensures reliable operation during motor stall and regenerative braking events.

Telecom PSU

Automotive DC-DC Converter

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for base station power.

IC Role / Device Role / Timing Role: Main switching element operating at 250 kHz with ZVS-assisted topology.

Use Value: 69 nC Q_g allows use of low-cost 2 A gate driver ICs while maintaining <50 ns turn-on delay.

Use Scenario: Secondary-side synchronous rectifier in 48 V–12 V bidirectional DC-DC converter for 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification mode with adaptive dead-time control.

Use Value: Soft-recovery body diode (t_rr = 65 ns) minimizes reverse recovery loss and EMI during light-load discontinuous conduction mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TR1PBF	R_DS(on) = 4.2 mΩ (higher), Q_g = 55 nC (lower)	Better suited for lower-current, higher-frequency resonant LLC converters where gate drive loss dominates.	Select when prioritizing gate charge over on-resistance in sub-60 A designs.
IPB60R045CP	600 V rating, SiC-based, R_DS(on) = 45 mΩ, Q_g = 32 nC	Used in high-voltage PFC stages; not drop-in compatible due to voltage class and gate drive requirements.	Choose only for >400 V systems requiring wide-bandgap performance and thermal stability.

Compared with IRF6662TR1PBF and IPB60R045CP, the IRF6678TR1PBF delivers optimal balance of ultra-low R_DS(on) and moderate Q_g for high-current, medium-voltage (≤60 V) hard-switched topologies-making it preferred for server VRMs and industrial motor inverters where conduction loss is dominant.

Availability

IRF6678TR1PBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF6678TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET product line targets high-efficiency power conversion systems, emphasizing low R_DS(on), fast switching, and ruggedness for demanding industrial and computing applications.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF6678TR1PBF has a maximum rated junction temperature of 175°C. Derating is required above 25°C case temperature per the datasheet's thermal resistance curve (R_θJC = 0.45°C/W). Operation at full 110 A current demands active heatsinking to maintain T_J ≤ 150°C for long-term reliability.

Does this MOSFET require a negative gate turn-off voltage?

No. The IRF6678TR1PBF is designed for zero-to-positive gate drive (0 V to +10 V or +15 V). Its V_GS(th) range (2.0–4.0 V) and positive-only threshold ensure safe turn-off at 0 V gate bias. Negative gate voltage is unnecessary and not recommended per Infineon's application guidelines.

Can it be paralleled with identical units for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) enables stable current sharing. Parallel operation requires matched gate drive loop inductance (<5 nH difference), Kelvin source connections, and symmetrical PCB layout. Thermal coupling between devices must be minimized to avoid thermal runaway.

Is the TO-247 package electrically isolated?

No. The TO-247AC package used for IRF6678TR1PBF has a non-isolated metal tab that is internally connected to the drain terminal. Electrical isolation requires either a silicone insulator pad with thermal grease or a ceramic insulator, and creepage/clearance distances must comply with end-equipment safety standards (e.g., UL 62368-1).

IRF6678TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5640 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6678TR1PBF FAQ

1.How can I place an order for IRF6678TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6678TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6678TR1PBF reliable?

The price and inventory of IRF6678TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6678TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6678TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6678TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6678TR1PBF?

IRF6678TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6678TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6678TR1PBF?

For technical support, including IRF6678TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6678TR1PBF requirements.

6.How does Aetrix verify that IRF6678TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6678TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6678TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6678TR1PBF?

All IRF6678TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6678TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6678TR1PBF part is unused and in its original packaging.

Return procedure for IRF6678TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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