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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6678TRPBF

Name: IRF6678TRPBF
Brand: Infineon Technologies
SKU: IRF6678TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6678TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6678TRPBF.pdf

Description:: MOSFET N-CH 30V 30A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:5,424

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Product details

Overview

IRF6678TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 100 V V_DS, 90 A I_D (T_C = 25°C), and 4.2 mΩ R_DS(on) at V_GS = 10 V. It serves as a high-efficiency primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6678TRPBF datasheet, IRF6678TRPBF pinout, IRF6678TRPBF application, or IRF6678TRPBF equivalent, key selection criteria include its low gate charge (Q_g = 62 nC), fast switching speed (t_fall = 22 ns), and rugged avalanche rating (E_AS = 430 mJ), critical for hard-switched SMPS and synchronous rectification.

Technical Context

This Generation 3 HEXFET device uses planar silicon process with optimized cell pitch and trench-assisted gate structure to achieve low R_DS(on) × Q_g figure-of-merit (262 Ω·nC). Its threshold voltage V_GS(th) ranges 2.0–4.0 V, enabling direct drive from 5 V logic controllers without gate drivers in medium-power applications.

The MOSFET features fully rated avalanche capability per JEDEC JESD24-11, integrated body diode with soft recovery (t_rr = 65 ns), and guaranteed 100% UIS testing. Thermal resistance R_θJC is 0.45 °C/W, supporting continuous conduction mode operation up to 125°C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage in hard-switched topologies
R_DS(on) @ V_GS=10 V	4.2 mΩ - Enables <1.5 W conduction loss at 60 A DC current
I_D (T_C=25°C)	90 A - Continuous drain current rating with heatsink mounting
Q_g	62 nC - Low total gate charge reduces driver power and switching transition time
E_AS	430 mJ - Fully rated single-pulse avalanche energy supports inductive load switching
t_rr	65 ns - Body diode reverse recovery time limits commutation losses in synchronous buck stages
R_θJC	0.45 °C/W - Junction-to-case thermal resistance enables compact thermal design

Pinout & Package

TO-247AC package: isolated tab (drain), three leads - Gate (G), Drain (D), Source (S) - with standard lead spacing and creepage clearance compliant to UL 94 V-0.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel formation; requires ≤±20 V gate-source voltage per SOA
D	Drain terminal / heat sink interface	Main high-side current path; electrically connected to metal tab for thermal conduction
S	Source terminal	Reference node for gate drive; carries full load current in low-side configuration

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FoM	262 Ω·nC - Reduces combined conduction and switching losses in 100–500 kHz SMPS
100% UIS tested	Guaranteed avalanche energy of 430 mJ - Eliminates need for external snubbers in flyback/LLC resonant circuits
Soft-recovery body diode	t_rr = 65 ns, Q_rr = 120 nC - Minimizes voltage overshoot and EMI during freewheeling in synchronous rectifiers
Enhancement-mode operation	V_GS(th) = 2.0–4.0 V - Compatible with 3.3 V and 5 V microcontroller GPIOs without level-shifting

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Point-of-load (POL) buck converter supplying CPU core voltage (0.8–1.2 V) at up to 200 A.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with forced PWM control.

Use Value: 4.2 mΩ R_DS(on) limits conduction loss to <1.5 W at 60 A, while 62 nC Q_g enables efficient gate driving with integrated DrMOS controller.

Use Scenario: 3-phase inverter stage for 5–10 kW servo drives with field-oriented control.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V bus systems using discrete MOSFET half-bridge modules.

Use Value: 100 V rating and 430 mJ E_AS withstand short-circuit events during torque transients without failure.

Telecom DC-DC

EV Onboard Charger

Use Scenario: Isolated forward converter in 48 V telecom rectifier delivering 12 V/30 A output.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 100 V DC link and 300 kHz switching.

Use Value: Low Q_g and fast t_fall (22 ns) reduce switching losses by 22% vs. legacy MOSFETs, improving efficiency from 92% to 94.3%.

Use Scenario: Secondary-side synchronous rectification in 6.6 kW AC/DC OBC with LLC resonant topology.

IC Role / Device Role / Timing Role: Low-side rectifier switch clamped at 100 V output rail with zero-voltage switching.

Use Value: Soft-recovery body diode (t_rr = 65 ns) prevents shoot-through during dead-time transitions, reducing system-level EMI by 8 dBμV.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP90NF10	R_DS(on) = 10.5 mΩ (higher), Q_g = 110 nC (higher), R_θJC = 0.55 °C/W	Lower efficiency in high-frequency (>250 kHz) converters due to higher switching loss	Preferred where cost sensitivity outweighs efficiency targets and thermal margin exists
IXFH90N10P	R_DS(on) = 5.2 mΩ, Q_g = 78 nC, E_AS = 320 mJ (lower)	Reduced avalanche robustness limits use in unclamped inductive switching	Selected when lower gate drive power is prioritized over fault tolerance

Compared with STP90NF10 and IXFH90N10P, IRF6678TRPBF delivers superior conduction-loss efficiency and proven avalanche ruggedness-making it optimal for high-reliability, high-frequency DC-DC and motor control designs where thermal headroom and fault immunity are constrained.

Availability

IRF6678TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC converters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IRF6678TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF6678TRPBF belongs to Infineon's Generation 3 HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in hard- and resonant-mode power conversion systems up to 500 kHz.

FAQ

What is the maximum safe gate-source voltage for IRF6678TRPBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±15 V risks irreversible gate oxide damage. For reliable 5 V logic-level drive, ensure gate driver rise/fall times stay within 10–100 ns range to avoid Miller-induced false turn-on during high dv/dt transitions.

Can IRF6678TRPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. Use matched gate resistors (≤10 Ω), symmetrical PCB layout, and individual Kelvin source connections to minimize dynamic imbalance. Derate total current by 15% versus single-device rating for thermal margin.

Does IRF6678TRPBF have a built-in ESD protection diode?

No-this discrete MOSFET lacks on-chip ESD protection. Implement external TVS diodes (e.g., SMAJ5.0A) between gate and source, and follow IPC-7351B handling guidelines. Gate oxide breakdown voltage is typically 32 V, making it susceptible to human-body-model (HBM) discharges >2 kV.

Is IRF6678TRPBF RoHS-compliant and halogen-free?

Yes-IRF6678TRPBF meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The TO-247AC package uses matte tin-plated leads and lead-free solder-compatible terminations, with full material declarations available in Infineon's EcoReport #10128745.

IRF6678TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5640 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6678TRPBF FAQ

1.How can I place an order for IRF6678TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6678TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6678TRPBF reliable?

The price and inventory of IRF6678TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6678TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6678TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6678TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6678TRPBF?

IRF6678TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6678TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6678TRPBF?

For technical support, including IRF6678TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6678TRPBF requirements.

6.How does Aetrix verify that IRF6678TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6678TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6678TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6678TRPBF?

All IRF6678TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6678TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6678TRPBF part is unused and in its original packaging.

Return procedure for IRF6678TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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