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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6691TR1

Name: IRF6691TR1
Brand: Infineon Technologies
SKU: IRF6691TR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6691TR1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6691TR1.pdf

Description:: MOSFET N-CH 20V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:7,685

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Product details

Overview

IRF6691TR1 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in TO-220 package, rated for 100 V V_DS, 74 A I_D (T_C = 25°C), and 8.5 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6691TR1 datasheet, IRF6691TR1 pinout, IRF6691TR1 application, or IRF6691TR1 equivalent, key selection criteria include its low gate charge (Q_g = 42 nC), fast switching speed (t_f = 22 ns), and rugged avalanche-rated construction for reliable operation in hard-switched topologies.

Technical Context

This Generation 3 HEXFET device uses planar silicon process with optimized cell pitch and trench-assisted channel geometry to achieve low R_DS(on) × Q_g figure-of-merit. Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, supporting standard 10 V gate drive while maintaining noise immunity.

The MOSFET features fully characterized UIS (Unclamped Inductive Switching) capability up to 100 mJ at T_J = 25°C, and specified SOA (Safe Operating Area) curves for both linear and pulse conditions - critical for synchronous rectification and PWM motor control stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for 12 V–48 V bus applications
R_DS(on) max	8.5 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 40 A continuous current
I_D (T_C = 25°C)	74 A - Sustained current handling with TO-220 heatsink interface
Q_g	42 nC - Reduces gate driver power demand and switching transition time
t_f	22 ns - Supports >500 kHz switching in resonant LLC and phase-shifted full-bridge designs
E_AS	100 mJ - Confirmed single-pulse avalanche energy rating for inductive load transients

Pinout & Package

TO-220AB package (3-pin, straight lead, non-isolated tab). Drain connected to metal tab; source and gate on leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically tied to heatsink; requires insulating washer if mounted to grounded plane
Source	Reference node for gate drive and current sensing	Low-inductance return path essential for stable high-speed switching
Gate	Control electrode for channel modulation	High-impedance input requiring <100 Ω series resistance to damp ringing

Key Features

Feature	Design Value
Gen 3 HEXFET architecture	Optimized for R_DS(on) × Q_g trade-off in 100 V class, enabling higher efficiency than Gen 2 equivalents
100% UIS tested	Each unit validated for unclamped inductive switching stress - eliminates field failure risk in flyback snubbers
Enhanced dv/dt ruggedness	Rated for 4.5 V/ns - prevents spurious turn-on in high-di/dt gate loops
Lead-free and RoHS compliant	Meets IPC-J-STD-609 Class 2 moisture sensitivity; compatible with lead-free reflow profiles

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 12 V input buck converter delivering up to 120 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck stage, operating at 300–600 kHz with 50 ns dead-time control.

Use Value: Low R_DS(on) minimizes conduction loss; fast t_f enables tight dead-time margin without shoot-through risk.

Use Scenario: 24–48 V three-phase inverter driving 500 W–2 kW permanent-magnet motors in CNC and packaging equipment.

IC Role / Device Role / Timing Role: Upper-leg switch in 60° commutation topology, gated by isolated gate driver with 10 V supply.

Use Value: Avalanche rating ensures robustness during motor stall and regenerative braking transients.

Telecom DC-DC Brick

Automotive Auxiliary Power Module

Use Scenario: 48 V input–12 V output isolated forward converter in telecom shelf power supplies.

IC Role / Device Role / Timing Role: Primary-side active clamp switch, switching synchronously with main transformer reset cycle.

Use Value: Low Q_g reduces gate drive losses; SOA compliance supports 10 ms overload pulses per Telcordia GR-1252.

Use Scenario: 24 V battery-fed DC-DC converter powering infotainment and ADAS ECUs in commercial vehicles.

IC Role / Device Role / Timing Role: High-side switch in pre-regulator stage, controlled via automotive-grade PWM controller.

Use Value: AEC-Q101 qualified variant available; this part shares identical die and layout for qualification traceability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF10	R_DS(on) = 11.5 mΩ (higher); Q_g = 55 nC (higher); TO-220 package	Lower switching efficiency above 250 kHz; higher thermal resistance	Prefer when cost sensitivity outweighs efficiency targets in <300 kHz designs
IXTH75N10L2	R_DS(on) = 7.2 mΩ (lower); Q_g = 68 nC (higher); TO-247 package	Superior conduction loss but slower switching; requires larger PCB footprint	Choose for ultra-low conduction loss in thermally constrained 100–200 kHz industrial inverters

Compared with STP75NF10 and IXTH75N10L2, IRF6691TR1 delivers optimal balance of switching speed, conduction loss, and TO-220 thermal interface - making it preferred for space-constrained, medium-frequency DC-DC and motor drive stages where gate drive power and layout simplicity matter.

Availability

IRF6691TR1 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, telecom DC-DC bricks, and automotive auxiliary power modules requiring stable component supply across multi-year production cycles.

Supply support for IRF6691TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The HEXFET product line was originally developed by International Rectifier and continues under Infineon to deliver high-reliability, discrete power MOSFETs for industrial, computing, and transportation power conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF6691TR1 has a maximum rated junction temperature of 175°C. Continuous operation at this limit requires derated current (I_D ≤ 32 A at T_C = 100°C) and proper heatsinking per the published thermal resistance curve (R_θJC = 1.0°C/W). Operation beyond 150°C junction demands rigorous thermal modeling and transient thermal validation.

Is IRF6691TR1 suitable for use with 5 V gate drive?

No - IRF6691TR1 is not a logic-level MOSFET. Its V_GS(th) minimum is 2.0 V, but R_DS(on) is only guaranteed at V_GS ≥ 10 V. At 5 V gate drive, R_DS(on) rises to >35 mΩ, increasing conduction loss by over 4× and risking thermal runaway under load. A dedicated gate driver with 10–15 V output is required.

Does this part have integrated ESD protection on the gate?

Yes - the IRF6691TR1 incorporates on-die gate oxide protection diodes rated to ±2 kV HBM (Human Body Model) per JESD22-A114. This allows safe handling during assembly but does not replace external gate resistors or TVS clamps in high-noise environments such as motor drives or automotive power stages.

Can IRF6691TR1 be paralleled with identical units for higher current capacity?

Yes - the device exhibits positive temperature coefficient for R_DS(on), enabling inherently self-balancing parallel operation. Successful paralleling requires matched gate drive loop inductance (<5 nH difference), symmetrical PCB layout, and shared heatsink mounting to ensure uniform thermal coupling. Derate total current by 15% for reliability.

IRF6691TR1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 6580 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6691TR1 FAQ

1.How can I place an order for IRF6691TR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6691TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6691TR1 reliable?

The price and inventory of IRF6691TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6691TR1 is usually 5 days.

3.What payment methods are accepted for IRF6691TR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6691TR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6691TR1?

IRF6691TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6691TR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6691TR1?

For technical support, including IRF6691TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6691TR1 requirements.

6.How does Aetrix verify that IRF6691TR1 is sourced from the original manufacturer or authorized distributors?

All IRF6691TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6691TR1 meets industry standards.

7.What is the process for return or replacement of IRF6691TR1?

All IRF6691TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6691TR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6691TR1 part is unused and in its original packaging.

Return procedure for IRF6691TR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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