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Infineon Technologies IRF6691TR1PBF
- Part No.:
- IRF6691TR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MT
- Datasheet:
-
IRF6691TR1PBF.pdf
- Description:
- MOSFET N-CH 20V 32A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:9,506
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Product details
Overview
IRF6691TR1PBF from Infineon Technologies (formerly International Rectifier) is a 20 V, N-channel DirectFET™ Power MOSFET optimized for synchronous buck converter high-side and low-side (SyncFET) sockets in CPU core DC-DC converters. It delivers 1.2 mΩ RDS(on) at VGS = 10 V, 47 nC total gate charge, integrated Schottky body diode with 26 nC Qrr, and 0.7 mm ultra-low profile package compatible with SO-8 PCB footprints.
For engineers reviewing the IRF6691TR1PBF datasheet, IRF6691TR1PBF pinout, IRF6691TR1PBF application, or IRF6691TR1PBF equivalent, key selection criteria include its dual-sided cooling capability, 80% improved thermal resistance over prior packages, ultra-low package inductance, and optimized Qg/RDS(on) ratio for high-frequency (>1 MHz), high-efficiency point-of-load regulation.
Technical Context
This MOSFET employs HEXFET® silicon on a copper-can DirectFET MT package with top-side drain and bottom-side source/gate terminals-enabling simultaneous PCB-side and heatsink-side thermal conduction. Its gate threshold voltage (VGS(th)) is tightly specified at 1.6–2.5 V with negative temperature coefficient (−4.1 mV/°C), supporting stable turn-on across −40°C to +150°C junction range.
The device integrates a low-Qrr body diode (26–39 nC) and exhibits high dV/dt immunity, critical for hard-switched synchronous rectification. Its Ciss = 6580 pF, Coss = 2070 pF, and Crss = 840 pF support fast, low-loss switching under 4.5 V and 10 V gate drive in multiphase VR12/VR13 and Intel IMVP-7 compliant power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V maximum - supports 12 V input rails with margin for transient overshoot in CPU core supplies. |
| RDS(on) @ 10 V | 1.2 mΩ typical - enables <1.5 W conduction loss at 32 A continuous drain current (TC = 25°C). |
| Qg total | 47 nC typical - balances switching speed and gate driver power demand in 500 kHz–2 MHz applications. |
| Qrr | 26 nC typical - reduces reverse recovery losses in synchronous buck low-side operation, improving efficiency by ~0.5–1.2%. |
| TJ max | +150°C - allows sustained operation in thermally constrained VRM modules without derating below rated current. |
| RthJC | 1.4 °C/W - enables >100 W power dissipation with minimal case-to-heatsink ΔT when using dual-sided cooling. |
| Package height | 0.7 mm - fits within strict Z-height constraints of notebook and server VRMs while maintaining SO-8 layout compatibility. |
Pinout & Package
IRF6691TR1PBF uses the DirectFET MT (Medium Size Can, T-Designation) package: copper-can construction with top-side exposed drain (D), and bottom-side plated-through-hole terminals for gate (G) and source (S). The footprint matches SO-8 layouts but eliminates leadframe parasitics.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top surface (entire metal can) | Drain (D) | Primary heat path and high-current output node; electrically connected to PCB copper pour or heatsink interface. |
| Bottom-side pad (center) | Gate (G) | Low-inductance gate connection; requires controlled-impedance routing to minimize ringing in high-dV/dt switching. |
| Bottom-side pads (outer) | Source (S) | Return path for both MOSFET channel and integrated body diode; shared with power ground plane for low-loop inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Reduces RthJA by 80% vs. SO-8 equivalents, enabling >2× power density in space-constrained VRMs. |
| Integrated Schottky body diode | Lowers Qrr to 26 nC (vs. >60 nC in standard MOSFETs), minimizing dead-time losses and EMI in SyncFET operation. |
| Ultra-low package inductance | Eliminates bond-wire inductance; achieves sub-0.5 nH source inductance for clean, fast switching with minimal voltage overshoot. |
| SO-8 footprint compatibility | Enables drop-in replacement in existing layouts without PCB redesign-critical for mid-life VRM upgrades. |
| Lead-free & RoHS-compliant | Qualified for 260°C reflow; meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life. |
Applications
| CPU Core Voltage Regulator (VRM) | GPU Power Delivery Module |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to modern x86 and ARM processors at up to 300 A peak. IC Role / Device Role / Timing Role: Low-side SyncFET switch operating at 500 kHz–2 MHz with precise dead-time control and zero-voltage switching assist. Use Value: 1.2 mΩ RDS(on) and 47 nC Qg reduce combined conduction + switching losses by ≥15% versus SO-8 alternatives, directly improving VRM efficiency and thermal headroom. |
Use Scenario: Compact, high-density power stage in discrete or module-based GPU VRMs for AI accelerators and gaming GPUs. IC Role / Device Role / Timing Role: High-side and low-side switching element in interleaved 3–6 phase topologies requiring <0.7 mm Z-height and dual thermal paths. Use Value: 0.7 mm profile and copper-can thermal design allow stacking with inductors and controllers in <8 mm board thickness, meeting OCP and PCIe Gen5 form factor requirements. |
| Server Memory Regulator (DDR5 VDDQ) | High-Frequency POL Converter |
Use Scenario: Point-of-load regulator delivering 1.25 V/40 A to DDR5 memory subsystems with tight transient response and low noise. IC Role / Device Role / Timing Role: Low-side FET in 1–2 phase buck with active current sharing and adaptive voltage positioning (AVP). Use Value: Integrated Schottky diode and 26 nC Qrr eliminate reverse recovery spikes, reducing output voltage ripple by 12–18 mVpp during load transients. |
Use Scenario: 1–3 MHz, 3–12 V input to 0.6–3.3 V output converter powering FPGAs, ASICs, and high-speed SerDes. IC Role / Device Role / Timing Role: Primary switching transistor in fixed-frequency or D-CAP3-controlled buck stage with digital current sensing. Use Value: Ultra-low Ciss/Coss ratio (3.2:1) and 840 pC Crss enable stable loop response and reduced gate drive loss at >1.5 MHz, extending light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6675TR1PBF | Higher RDS(on) (2.0 mΩ @ 10 V), lower Qg (34 nC), same DirectFET MT package | Better suited for lower-current, higher-frequency designs where gate drive loss dominates over conduction loss | Select when optimizing for <50 A loads and >3 MHz switching with limited gate drive capability |
| SiR626DP-T1-GE3 (Vishay) | 25 V rating, 1.35 mΩ RDS(on), 52 nC Qg, PowerPAK® SO-8 package (not DirectFET) | Lacks dual-sided cooling; higher RthJA (20 °C/W) limits power density in compact VRMs | Choose only if SO-8 mechanical compatibility is mandatory and thermal budget permits 30% lower current density |
Compared with IRF6675TR1PBF and SiR626DP-T1-GE3, the IRF6691TR1PBF uniquely combines lowest RDS(on), dual-sided cooling, and integrated Schottky diode-making it the optimal choice for high-current, thermally constrained CPU/GPU VRMs where efficiency and Z-height are co-primary constraints.
Availability
IRF6691TR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, DDR5 memory regulators, and high-frequency point-of-load converters requiring stable component supply and long-term industrial availability.
Supply support for IRF6691TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.
The IRF6691TR1PBF belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and data center power systems.
FAQ
What is the maximum continuous drain current for IRF6691TR1PBF at 70°C ambient?
The IRF6691TR1PBF supports 26 A continuous drain current at TA = 70°C with proper PCB copper area and airflow. This rating assumes mounting on a 1 in² copper board with double-sided cooling per datasheet Fig. 3. Derating follows a linear 0.022 W/°C slope above 70°C ambient.
Does IRF6691TR1PBF require a gate resistor for stability in synchronous buck applications?
Yes-a 2–5 Ω gate resistor is recommended to dampen high-frequency oscillation caused by interaction between gate drive impedance and the device's ultra-low package inductance. Layout must minimize gate loop area; values >5 Ω increase switching time and losses without meaningful benefit.
Can IRF6691TR1PBF be used in avalanche-rated circuits?
No. While the device has a 230 mJ single-pulse avalanche energy rating (EAS), it is not characterized or qualified for repetitive avalanche operation. Its design targets hard-switched synchronous buck topologies-not flyback or inductive clamp circuits requiring sustained avalanche robustness.
Is the integrated body diode in IRF6691TR1PBF a true Schottky or a quasi-Schottky structure?
It is a process-engineered quasi-Schottky diode formed by optimized P-body/N-epi junction design-not a metal-semiconductor contact. This achieves Schottky-like Qrr (26 nC) and forward voltage (~0.65 V) while retaining full MOSFET ruggedness and temperature stability up to 150°C.
IRF6691TR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MT
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 71 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6580 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MT
IRF6691TR1PBF FAQ
1.How can I place an order for IRF6691TR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6691TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6691TR1PBF reliable?
The price and inventory of IRF6691TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6691TR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6691TR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6691TR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6691TR1PBF?
IRF6691TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6691TR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6691TR1PBF?
For technical support, including IRF6691TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6691TR1PBF requirements.
6.How does Aetrix verify that IRF6691TR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6691TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6691TR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6691TR1PBF?
All IRF6691TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6691TR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6691TR1PBF part is unused and in its original packaging.
Return procedure for IRF6691TR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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