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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6691TRPBF

Name: IRF6691TRPBF
Brand: Infineon Technologies
SKU: IRF6691TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6691TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6691TRPBF.pdf

Description:: MOSFET N-CH 20V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6691TRPBF from Infineon Technologies (formerly International Rectifier) is a 20 V, N-channel DirectFET™ Power MOSFET optimized for synchronous buck converter high-side and low-side (SyncFET) sockets in CPU core DC-DC converters. It delivers 1.2 mΩ R_DS(on) at V_GS = 10 V, 47 nC total gate charge, and integrated Schottky body diode with 26 nC Q_rr, enabling high-frequency, high-efficiency operation under high-current loads.

For engineers reviewing the IRF6691TRPBF datasheet, IRF6691TRPBF pinout, IRF6691TRPBF application, or IRF6691TRPBF equivalent, key selection criteria include ultra-low profile (<0.7 mm), dual-sided cooling capability, 80% improved thermal resistance versus prior packages, and critical SyncFET timing parameters including 15 nC Q_gd and 19 nC Q_sw.

Technical Context

This MOSFET employs HEXFET® silicon on a copper-can DirectFET MT package with top-side drain and bottom-side source/gate terminals. Its design targets sub-1 V input voltage regulation in multiphase VRMs, where low R_DS(on), minimized Q_g/Q_gd ratio, and fast reverse recovery (t_rr = 32–48 ns) reduce both conduction and switching losses.

The integrated Schottky diode replaces the parasitic p-n body diode to suppress Q_rr and eliminate minority-carrier storage delay. Gate threshold voltage is tightly specified at 1.6–2.5 V with negative temperature coefficient (−4.1 mV/°C), supporting stable turn-on across −40°C to +150°C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports 12 V and 5 V input rails with margin for transient overshoot in VRM applications.
R_DS(on) @ 10 V	1.2 mΩ - Enables <1 W conduction loss at 32 A DC, critical for >90% efficiency in microprocessor power stages.
Q_g total	47 nC - Low gate drive energy reduces driver IC power consumption and enables faster PWM edge rates.
Q_rr	26 nC - Integrated Schottky diode cuts reverse recovery charge by >70% vs. standard MOSFETs, minimizing shoot-through risk.
t_r/t_f	95 ns / 10 ns - Fast switching supports >1 MHz operation while maintaining EMI control via controlled dV/dt.
R_thJC	1.4 °C/W - Enables direct thermal path from die to PCB copper or heatsink, essential for dual-sided cooling layouts.
V_GS(th)	1.6–2.5 V - Ensures robust turn-on with standard 3.3 V or 5 V gate drivers without overdrive requirement.

Pinout & Package

IRF6691TRPBF uses the DirectFET MT (Medium Size Can, T-Designation) package: 6.35 × 5.05 × 0.7 mm, top-side drain metal pad, bottom-side source and gate terminals. Compatible with SO-8 footprint but with 80% lower profile and enhanced thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current output node; thermally connected to die backside for dual-sided cooling.
Bottom Left Pad	Source (S)	Low-side return path; electrically and thermally coupled to PCB ground plane.
Bottom Right Pad	Gate (G)	Control input; isolated by thin oxide; requires <2.5 V threshold compliance for logic-level drive.

Key Features

Feature	Design Value
DirectFET MT packaging	0.7 mm profile enables ultra-thin VRM designs and dual-sided thermal management without mechanical standoff.
Integrated Schottky body diode	Eliminates minority-carrier storage, reducing Q_rr to 26 nC and enabling zero-voltage switching in synchronous rectification.
Ultra-low Q_gd/Q_g ratio	15 nC / 47 nC = 0.32 - Minimizes Miller plateau duration, improving controllability during hard switching.
High C_dv/dt immunity	Rated for >10 V/ns - Maintains stable operation during fast transient events in high-dV/dt VRM environments.
Lead-free & RoHS compliant	Qualified for 260°C reflow - Compatible with standard SMT assembly processes without special thermal profiling.

Applications

Server CPU Voltage Regulator

AI Accelerator Core Power

Use Scenario: Multiphase buck converter supplying 0.8–1.2 V @ >300 A to high-performance Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Low-side SyncFET handling continuous high-current freewheeling with minimal conduction loss and fast body diode recovery.

Use Value: 1.2 mΩ R_DS(on) and 26 nC Q_rr reduce per-phase loss by 1.8 W versus legacy SO-8 MOSFETs, enabling higher power density.

Use Scenario: Single-phase or 2-phase VRM powering GPU or ASIC cores in datacenter AI accelerators requiring rapid load transients.

IC Role / Device Role / Timing Role: High-side switch operating at 500 kHz–1 MHz with precise dead-time control enabled by low Q_gd and fast t_f.

Use Value: 10 ns fall time and 1.4 °C/W R_thJC allow sustained 200 A peak current without thermal throttling during burst-mode inference workloads.

5G Baseband Power Management

Automotive ADAS Domain Controller

Use Scenario: Compact, high-efficiency point-of-load regulator for FPGA and RF SoCs in macro/micro base stations.

IC Role / Device Role / Timing Role: Primary switching element in 12 V → 1.8 V conversion stage, leveraging low-profile package for dense board layout.

Use Value: 0.7 mm height allows stacking with shielding cans and adjacent RF components without interference or airflow blockage.

Use Scenario: Safety-critical 5 V or 3.3 V rail generation for radar processor and camera ISP in ISO 26262-compliant domain controllers.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated diode for fault-tolerant freewheeling during short-circuit events.

Use Value: 260 A pulsed drain rating and −40°C to +150°C operating range ensure functional safety compliance without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6675TRPBF	Higher R_DS(on) (1.7 mΩ @ 10 V), same package and Q_g (47 nC)	Lower current density; suited for cost-sensitive 100–200 A VRMs with relaxed thermal constraints	Select when thermal budget allows higher conduction loss and BOM cost is prioritized over peak efficiency.
SiR626DP-T1-GE3	25 V rating, 1.3 mΩ R_DS(on), 52 nC Q_g, TrenchFET® Gen IV silicon	Higher gate charge increases driver loss; better SOA for avalanche-prone industrial inputs	Prefer when system requires wider V_DS margin or must withstand unclamped inductive spikes above 20 V.

Compared with IRF6675TRPBF and SiR626DP-T1-GE3, the IRF6691TRPBF offers the lowest R_DS(on) in its class and unique DirectFET thermal architecture-making it optimal for space-constrained, high-current CPU/ASIC VRMs where thermal resistance and switching loss dominate system efficiency.

Availability

IRF6691TRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, AI accelerator core power supplies, and 5G baseband power management requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for IRF6691TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with broad IP in silicon and wide-bandgap technologies.

The DirectFET product line was developed specifically for high-frequency, high-current DC-DC conversion in computing and communications infrastructure, emphasizing thermal performance, package miniaturization, and switching efficiency over legacy leaded packages.

FAQ

What is the maximum continuous drain current for IRF6691TRPBF at 70°C ambient?

The maximum continuous drain current is 26 A at T_A = 70°C with V_GS = 10 V, based on thermal limits of the DirectFET MT package on a 1 in² copper board. This rating assumes double-sided cooling and accounts for R_thJA = 12.5 °C/W under those conditions.

Does IRF6691TRPBF require a gate resistor for stability in synchronous buck applications?

Yes-a gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by low package inductance and high dV/dt. The device's ultra-low Q_gd and 0.6 Ω typical gate resistance make it sensitive to parasitic oscillation without proper gate drive impedance control.

Can IRF6691TRPBF be used in place of a standard SO-8 MOSFET without PCB layout changes?

Yes-the DirectFET MT outline matches SO-8 pad geometry (see IRF application note AN-1035), allowing drop-in replacement on existing layouts. However, thermal vias under the top drain pad and bottom-side copper area must be verified to exploit dual-sided cooling benefits.

Is the integrated Schottky diode rated for continuous conduction in synchronous rectification?

No-the integrated Schottky is optimized for reverse recovery suppression during freewheeling, not continuous forward conduction. Its V_SD is 0.65 V max at 25 A, and continuous source current rating remains 200 A (body diode limit), not Schottky-rated.

IRF6691TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 6580 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6691TRPBF FAQ

1.How can I place an order for IRF6691TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6691TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6691TRPBF reliable?

The price and inventory of IRF6691TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6691TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6691TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6691TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6691TRPBF?

IRF6691TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6691TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6691TRPBF?

For technical support, including IRF6691TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6691TRPBF requirements.

6.How does Aetrix verify that IRF6691TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6691TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6691TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6691TRPBF?

All IRF6691TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6691TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6691TRPBF part is unused and in its original packaging.

Return procedure for IRF6691TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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